Copper bonding wire and preparation method thereof

A copper wire and bonding technology, which is applied in the field of bonding copper wire and its preparation, can solve problems such as stress concentration, complicated process, and difficult control, and achieve the effects of improving surface oxidation resistance, improving comprehensive performance, and improving mechanical properties

Inactive Publication Date: 2018-06-12
上海铭沣科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process mainly has the following defects: first, in this process, the billet of bonded copper wire is produced by horizontal continuous casting, and the process of horizontal continuous casting is very complicated and difficult to control; second, the intermediate After the alloy and copper are fused, horizontal continuous casting without any process treatment will lead to uneven dispersion of other metal elements in the copper alloy, thereby affecting the mechanical properties of the product; third, the bonded copper after horizontal continuous casting There is a phenomenon of stress concentration in the silk blank, and if it is not annealed for stress relief, it will cause defects in the finished product, thereby affecting the mechanical properties of the product
However, this manufacturing method still has the following defects: the copper alloy ingot formed by casting has stress concentration, and it is directly rolled without performing relevant heat treatment, and the mechanical properties of the product are not uniform, which will affect the service life of the finished product

Method used

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  • Copper bonding wire and preparation method thereof
  • Copper bonding wire and preparation method thereof
  • Copper bonding wire and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment approach 1

[0033] For the preparation method of bonding copper wire, see Figure 7 , the specific process is as follows:

[0034] 1. Preparation of master alloy: Take the preparation of Cu-Al alloy as an example to illustrate the preparation of master alloy: account for 1%-3% of the total mass of Cu-Al master alloy by elemental Al, and the balance is 6N copper ratio, weigh Good elemental Al and 6N copper. Put the weighed elemental Al into the feeding bin of the vacuum furnace, and then put the 6N copper into the melting crucible of the vacuum furnace. Vacuum down to 10 - 3 After Pa, backfill argon to the slight positive pressure in the vacuum furnace to start melting 6N copper. After the 6N copper is melted and cleared, add elemental Al to the copper melt through the feeding mechanism, and wait for the elemental Al to melt and mix with the copper melt. After uniformity, the copper liquid is poured into the mold to prepare the required Cu-Al master alloy. The same method can prepar...

Embodiment approach 2

[0043] For the preparation method of bonding copper wire, see Figure 7 , the specific process is as follows:

[0044] 1. Preparation of master alloy: Take the preparation of Cu-Al alloy as an example to illustrate the preparation of master alloy.

[0045] Weigh the elemental Al and 6N copper according to the ratio that the elemental Al accounts for 1%-3% of the total mass of the Cu-Al master alloy, and the balance is 6N copper. Put the weighed elemental Al into the feeding bin of the vacuum furnace, and then put the 6N copper into the melting crucible of the vacuum furnace. Vacuum down to 10 -3 After Pa, backfill argon to the slight positive pressure in the vacuum furnace to start melting 6N copper. After the 6N copper is melted and cleared, add elemental Al to the copper melt through the feeding mechanism, and wait for the elemental Al to melt and mix with the copper melt. After uniformity, the copper liquid is poured into the mold to prepare the required Cu-Al master a...

Embodiment approach 3

[0055] according to image 3 With the components and contents shown, a copper bonding wire with a diameter of 20 μm was prepared.

[0056] For the preparation method of bonding copper wire, see Figure 7 , the specific process is as follows:

[0057] 1. Preparation of master alloy: Take the preparation of Cu-Al alloy as an example to illustrate the preparation of master alloy. According to the proportion relationship that the elemental Al accounts for 1% -3% of the total mass of the Cu-Al master alloy, and the balance is 6N copper, the elemental Al and 6N copper are weighed. Put the weighed elemental Al into the feeding bin of the vacuum furnace, and then put the 6N copper into the melting crucible of the vacuum furnace. Vacuum to 10 -3 After Pa, backfill argon to the slight positive pressure in the vacuum furnace to start melting 6N copper. After the 6N copper is melted and cleared, add elemental Al to the copper melt through the feeding mechanism, and wait for the elemen...

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Abstract

The invention relates to a copper bonding wire and a preparation method thereof. The copper bonding wire comprises, by mass, 0.0003-0.003% of lithium, 0.0002-0.002% of calcium, 0.0002-0.001% of aluminum, 0.0005-0.005% of cerium or yttrium, 0.0001-0.001% of other inevitable impurity elements and the balance copper. The preparation method of the copper bonding wire comprises the steps of manufacturing of intermediate alloy, manufacturing of alloy ingots, homogenizing annealing, hot extrusion, stress relief annealing, drawing, final annealing, multiple winding subpackaging and final protective packaging, and intermediate stress relief annealing can further be conducted in the drawing process according to the actual demands. The copper bonding wire has better oxidation resistance while maintaining the good conducting and radiating properties, and the prepared copper bonding wire is better in mechanical performance due to the facts that homogenizing annealing is additionally conducted and the intermediate stress relief annealing technique can be conducted according to demands in the preparation process of the copper bonding wire.

Description

technical field [0001] The invention relates to a semiconductor packaging lead material and a production process thereof, in particular to a bonding copper wire and a preparation method thereof. Background technique [0002] As a bonding material for semiconductor and integrated circuit packaging leads, its special application environment has put forward higher requirements for its thermal conductivity, surface oxidation resistance, tensile performance, and welding performance. [0003] Chinese patent document CN1949493A discloses a bonded copper wire. The material formula of the bonded copper wire disclosed in this document is: calcium 0.0005%-0.001%, cerium or titanium 0.0003-0.0007%, and the balance is copper. Below 99.9996%. Using the copper wire disclosed in this document as the bonding material reduces the price of the bonding wire on the one hand, and on the other hand meets the requirements for high electrical conductivity and bonding wire strength. However, this ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/01C22C9/00C22C1/03C22F1/08C22F1/02
CPCC22C9/01C22C1/03C22C9/00C22F1/02C22F1/08
Inventor 倪海霞
Owner 上海铭沣科技股份有限公司
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