Novel structural cadmium telluride thin-film battery and preparation method thereof

A technology of thin-film battery and new structure, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of affecting light energy, reducing the light transmittance of FTO substrates, affecting material properties, etc., to achieve improved uniformity and superior photoelectric performance , the effect of improving the transmission efficiency

Inactive Publication Date: 2018-06-19
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The optimization measures of the existing CdS window layer can indeed improve the transfer efficiency of photogenerated carriers to a certain extent, but the surface modification or structural change of CdS will affect the performance of the material itself, especially when the thickness of the window layer increases. Finally, the light transmittance of the FTO substrate will be reduced, which will directly affect the light energy reaching the light-absorbing material, so that the efficiency of the solar cell will not change much, which is basically equal to "balance the merits and demerits".

Method used

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  • Novel structural cadmium telluride thin-film battery and preparation method thereof
  • Novel structural cadmium telluride thin-film battery and preparation method thereof
  • Novel structural cadmium telluride thin-film battery and preparation method thereof

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Embodiment 1

[0029] Such as figure 1 As shown, a new structure of cadmium telluride thin film battery is provided with FTO conductive glass substrate layer, TiO 2 Barrier layer, cadmium sulfide window layer, cadmium telluride light absorbing layer, Cu back contact layer and molybdenum nickel composite back electrode layer. Among them, the thickness of the conductive film in the substrate layer is 50nm, TiO 2 The thickness of the barrier layer is 200nm, the thickness of the cadmium sulfide window layer is 200nm, the thickness of the cadmium telluride light absorption layer is 2μm, the thickness of the Cu back contact layer is 50nm, and the thickness of the molybdenum nickel composite back electrode layer is 200nm.

[0030] The preparation method of the above-mentioned cadmium telluride solar cell comprises the following steps:

[0031] (1) Use FTO conductive glass as the substrate material, cut it into a size of 2cm×2cm, use ultrasonic cleaning method, clean it with absolute ethanol solut...

Embodiment 2

[0041] Such as figure 1 As shown, a new structure of cadmium telluride thin film battery is provided with FTO conductive glass substrate layer, TiO 2 Barrier layer, cadmium sulfide window layer, cadmium telluride light absorbing layer, Cu back contact layer and molybdenum nickel composite back electrode layer. Among them, the thickness of the conductive film in the substrate layer is 100nm, TiO 2 The thickness of the blocking layer is 300nm, the thickness of the cadmium sulfide window layer is 250nm, the thickness of the cadmium telluride light absorbing layer is 3μm, the thickness of the Cu back contact layer is 100nm, and the thickness of the molybdenum nickel composite back electrode layer is 300nm.

[0042] The preparation method of the above-mentioned cadmium telluride solar cell comprises the following steps:

[0043] (1) Use FTO conductive glass as the substrate material, cut it into a size of 2cm×2cm, use ultrasonic cleaning method, clean it with absolute ethanol sol...

Embodiment 3

[0053] Such as figure 1 As shown, a new structure of cadmium telluride thin film battery is provided with FTO conductive glass substrate layer, TiO 2 Barrier layer, cadmium sulfide window layer, cadmium telluride light absorbing layer, Cu back contact layer and molybdenum nickel composite back electrode layer. Among them, the thickness of the conductive film in the substrate layer is 150nm, TiO 2 The thickness of the barrier layer is 400nm, the thickness of the cadmium sulfide window layer is 300nm, the thickness of the cadmium telluride light absorption layer is 4μm, the thickness of the Cu back contact layer is 150nm, and the thickness of the molybdenum nickel composite back electrode layer is 400nm.

[0054] The preparation method of the above-mentioned cadmium telluride solar cell comprises the following steps:

[0055] (1) Use FTO conductive glass as the substrate material, cut it into a size of 2cm×2cm, use ultrasonic cleaning method, clean it with absolute ethanol sol...

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Abstract

The invention discloses a novel structural cadmium telluride thin-film battery and a preparation method thereof. The thin-film battery successively comprises a substrate layer, a window layer, a light-absorbing layer, a back contact layer and a back electrode layer. A barrier layer is further disposed between the substrate layer and the window layer. The material of the barrier layer is TiO2. Thebattery includes a TiO2 barrier layer structure, and utilizes an energy level barrier formed between energy level differences to form a multi-level transition structure with the CdS window layer, thereby improving carrier transfer efficiency and increasing carrier utilization rate in the battery, reducing recombination, and achieving a goal of improving efficiency.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a cadmium telluride thin-film cell with a novel structure and a preparation method thereof. Background technique [0002] With the rapid development of social economy, the sustainable development of energy and environment has become two inevitable major tests in human existence. The development and utilization of new energy emerges as the times require, and has attracted global attention and attention. With its unique advantages, solar energy has emerged among many new energy sources and has become a leader in the new energy industry. As the second generation of solar cells, compound thin-film solar cells have the advantages of low cost, easy mass production, stable physical and chemical properties, and high conversion efficiency, and have attracted the attention of many research institutions and companies. [0003] CdTe thin-film solar cells, as a representative ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/0352H01L31/073H01L31/18
CPCH01L31/0296H01L31/035272H01L31/073H01L31/1836Y02E10/543Y02P70/50
Inventor 彭寿马立云潘锦功殷新建文秋香
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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