Ultraviolet LED epitaxial preparation method and ultraviolet LED

A kind of epitaxy and ultraviolet technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve the effect of solving cracking phenomenon, increasing lifespan and improving crystal quality

Inactive Publication Date: 2018-06-19
MAANSHAN JASON SEMICON CO LTD
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve at least one of the problems mentioned in the background technology, the present invention provides a UV LED epitaxial preparation method and UV LED, which can release the stress of the epitaxial layer, solve the cracking phenomenon caused by excessive stress, and greatly improve the AlGaN epitaxial layer. Crystal quality, improving the internal quantum efficiency of deep ultraviolet LEDs, improving luminous efficiency and prolonging the life of ultraviolet LED devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet LED epitaxial preparation method and ultraviolet LED
  • Ultraviolet LED epitaxial preparation method and ultraviolet LED
  • Ultraviolet LED epitaxial preparation method and ultraviolet LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] figure 1 It is a schematic flow chart of the ultraviolet LED epitaxial preparation method provided in Embodiment 1 of the present invention.

[0048] At present, deep ultraviolet LEDs mainly use AlGaN as the main growth material, and use the CVD epitaxial growth method to grow the required light-emitting structure. The most basic structure includes AlN buffer layer, AlGaN undoped layer, n-type AlGaN layer, AlGaN quantum well layer, AlGaN electron blocking layer, and p-type GaN layer. Although deep ultraviolet AlGaN LEDs are widely used. However, there are still some problems in the application of AlGaN LED. For example: 1. When AlN or AlGaN epitaxial layer is grown on sapphire, due to the large lattice mismatch, the stress of the epitaxial layer is too large. When it grows to a certain thickness, the AlN or AlGaN epitaxial layer is prone to cracking; 2. AlGaN crystal quality Poor, resulting in a higher dislocation density in the epitaxial layer of the UV LED, thus gr...

Embodiment 2

[0102] figure 2 It is a schematic structural diagram of the ultraviolet LED provided by Embodiment 2 of the present invention. image 3 It is the non-doped Al of the ultraviolet LED provided by the second embodiment of the present invention t Ga 1-t N / SiN x Schematic diagram of the structure of the periodic structure layer. Figure 4 It is the Al of the ultraviolet LED provided in Embodiment 2 of the present invention m Ga 1-m N / Al y Ga 1-y Schematic diagram of the structure of N multiple quantum wells. Refer to attached figure 2 to attach Figure 4 As shown, on the basis of the first embodiment above, the second embodiment of the present invention also provides an ultraviolet LED.

[0103] Specifically, the ultraviolet LED is prepared by the ultraviolet LED epitaxial preparation method in the first embodiment.

[0104] It should be noted that the ultraviolet LED adopts the preparation method in the first embodiment, and includes the substrate 10, the buffer layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an ultraviolet LED epitaxial preparation method capable of releasing epitaxial layer stress and an ultraviolet LED. According to the method, a substrate, a buffer layer, a non-doped AltGa1-tN / SiNx periodic structure layer, an N-type doped AluGa1-uN layer, an AlmGa1-mN / AlyGa1-yN multi-quantum well structure, an AlzGa1-zN electron barrier layer, a P-type doped AlvGa1-vN layerand a P-type doped GaN layer are prepared from the bottom to the top in turn so as to form the ultraviolet LED. The SiNx layer in the non-doped AltGa1-tN / SiNx periodic structure layer can effectivelyreduce the stress of the AlGaN in the growth process so that the phenomenon of cracking caused by high stress can be solved. Besides, extension of the defect can be effectively suppressed by SiNx so that the crystal quality of the AlGaN epitaxial layer can be greatly enhanced, the internal quantum efficiency of the ultraviolet LED can also be obviously improved and thus the luminous efficiency canbe enhanced. Meanwhile, the bottom crystal quality is improved so that the service life of the ultraviolet LED device can be obviously enhanced.

Description

technical field [0001] The invention relates to a growth method of an ultraviolet light-emitting diode, in particular to an ultraviolet LED epitaxial preparation method capable of releasing stress and the ultraviolet LED. Background technique [0002] With the progress of our country's scientific and technological level, the continuous development of the manufacturing industry, the living standard has also been continuously improved, and the material life and spiritual life have been greatly improved. However, the aggravation of smog and water pollution in recent years has added flaws to the ever-improving living standards, and the bacteria carried in the air and water are eroding our health. In order to protect one's own health, various disinfection and sterilization devices have been born, such as air purifiers and water processors. The main sterilizing functional components of these sterilizing devices are ultraviolet lamps, and the most popular ones are deep ultraviolet...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/12H01L33/06
CPCH01L33/007H01L33/06H01L33/12
Inventor黄小辉王小文郑远志梁旭东
OwnerMAANSHAN JASON SEMICON CO LTD