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Copper thin film preparation method

A technology of copper thin film and copper compound, which is applied in the direction of liquid chemical plating, metal material coating process, coating, etc., can solve the problems of complex process, large coating stress, difficult film separation, etc., and achieve uniform physical properties, thickness Uniform and controllable, easy-to-operate effect

Active Publication Date: 2018-06-29
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Claims
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Problems solved by technology

[0005] In order to solve the problems of difficult film separation, complex process, and large coating stress in the traditional copper thin film preparation method, which needs to be deposited on a solid surface, the present invention provides a copper thin film preparation method, comprising: using liquid metal as Deposition template, NaOH solution is the deposition liquid medium, adding copper-containing compound to NaOH solution to prepare copper film

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[0025] figure 1 Is a schematic diagram of a method for preparing a copper film according to a preferred embodiment of the present invention, such as figure 1 As shown, the present invention provides a method for preparing a copper film, which includes: using liquid metal as a deposition template, and a NaOH solution as a deposition liquid medium, adding a copper-containing compound to the NaOH solution to prepare a copper film.

[0026] Specifically, in this embodiment, NaOH solution is used as the deposition liquid medium, liquid metal is immersed in the NaOH solution as the deposition template, and the copper-containing compound is added to the NaOH solution to cause the copper-containing compound to undergo a reduction reaction in the NaOH solution, so that the The prepared copper film is formed on the metal surface.

[0027] figure 2 Is a flow chart of a method for preparing a copper film according to a preferred embodiment of the present invention, such as figure 2 As shown, ...

Embodiment 1

[0043] S1. 5 parts of liquid metal with 75.5wt% Ga and 24.5wt% In are added to 10 parts of NaOH solution with a concentration of 1mol / L to precipitate the liquid metal in the NaOH solution;

[0044] S2. Add 1 part of CuO powder with D90 particle size of 50nm and purity of 99.99% to the NaOH solution;

[0045] S3. Heat the NaOH solution to 50°C in a water bath, and the CuO powder undergoes a reduction reaction. After a deposition time of 12 hours, a copper film grown on the surface of the liquid metal is obtained;

[0046] S4. Extract the liquid metal on which the copper film is grown on the surface, separate the liquid metal and the copper film to obtain a copper film, and test its phase.

[0047] image 3 Is the SEM cross-sectional view of the copper film prepared according to the embodiment of the present invention, such as image 3 As shown, it can be seen that the copper film prepared in Example 1 is composed of nano-copper and has a thickness of about 300 nm.

Embodiment 2

[0049] S1. Add 10 parts of liquid metal with a composition of 68.5wt% Ga, 20.5wt% In and 10.5wt% Sn to 10 parts of NaOH solution with a concentration of 0.5mol / L to precipitate the liquid metal in the NaOH solution;

[0050] S2. Add 0.01 parts of CuO powder with a D90 particle size of 50nm and a purity of 99.99% and 0.01 parts of CuCl with a purity of 99.99% into the NaOH solution 2 Composition of copper-containing compounds;

[0051] S3. Heat the NaOH solution to 30°C in a water bath, and the copper-containing compound undergoes a reduction reaction. After a deposition time of 24 hours, a copper film grown on the surface of the liquid metal is obtained;

[0052] S4. Extract the liquid metal on which the copper thin film is grown on the surface, separate the liquid metal and the copper thin film to obtain a copper thin film, and test its microscopic morphology.

[0053] Figure 4 Is the XRD pattern of the copper thin film prepared according to the embodiment of the present invention, s...

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Abstract

The invention provides a copper thin film preparation method. The method comprises the steps that liquid metal serves as a template, a NaOH solution serves as a sedimentary liquid-phase medium, a copper-contained compound is added into the NaOH solution, and the copper thin film is prepared. The prepared copper thin film is uniform and dense in physical property, uniform and controllable in thickness and simple, efficient and convenient and fast in operation. By means of the copper thin film, the thickness ranging from nanoscale to micrometer scale can be controlled continuously, high specificconductance is achieved, high production applicability is achieved, and the copper thin film preparation method can be applied to the fields of super-large-scale integrated circuits and micro electromechanical systems (MEMS) comprising metal wiring, microflow devices, biological chip or semiconductor chip surface technology and the like.

Description

Technical field [0001] The invention relates to the field of material preparation, in particular to a method for preparing a copper film. Background technique [0002] Metal copper has high conductivity and low electromigration. It has gradually replaced aluminum and has been used in the metal wiring of integrated circuits. As the metal wiring of ultra-large-scale integrated circuits and micro-electromechanical systems (MEMS) has moved toward ultra-deep sub-micron technology With the development of the chip, the packaging density of the devices in the chip continues to increase, and the manufacturing of the multilayer thin film interconnection process has become an important research field in the industry. The wire width of metal copper wiring has been developed to tens of nanometer manufacturing technology. However, the reduction of feature size makes the performance of semiconductor devices always be affected by the delay of resistance and capacitance, hindering the developmen...

Claims

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Application Information

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IPC IPC(8): C23C18/08
CPCC23C18/08
Inventor 崔云涛汤剑波王玉书赵曦刘静
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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