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Preparation method of tungsten-nickel alloy dielectric material with barium titanate thin film

A dielectric material, tungsten-nickel alloy technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as leakage current, increased dielectric loss, hindering oxygen vacancy migration, failure, etc.

Inactive Publication Date: 2018-07-03
QINGDAO XIANGZHI ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method for preparing a tungsten-nickel alloy dielectric material with a barium titanate film. The dielectric material prepared by the method solves the problems of "nickel pools" and holes that often occur in the traditional fine-grained hard alloy preparation process. The multilayer The film structure can not only hinder the migration of oxygen vacancies, but also increase the 3 The in-plane compressive stress of the film can reduce the dielectric loss and increase the dielectric constant, and solve the problem of the existing BaTiO 3 Oxygen vacancies in the film due to preparation and service lead to leakage current, increased dielectric loss, and even failure

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Prepare mixed powder according to the following weight components:

[0034] Tungsten carbide, 90.1%, Fischer particle size 0.8-1μm;

[0035] Nickel powder, 5%, Fischer particle size 0.5-1.0μm;

[0036] Chromium carbide, balance.

[0037] The mixed powder with the above ratio is wet-milled; the ball milling time is controlled in sections; firstly, the carbide powder and the additive chromium carbide are added to the ball mill barrel for wet milling for 12 hours, and then nickel powder is added for wet milling for 14 hours.

[0038] The ball milled mixture slurry was dried.

[0039] The dry mix is ​​pressed into compacts of the desired shape.

[0040] The pressed product is sintered at high temperature in a sintering furnace, the sintering temperature is 1450°C, the holding time is 70-90min, and the sintering pressure is 4.5Mpa to obtain a tungsten-nickel alloy matrix.

[0041] Substrate pretreatment. The substrate pretreatment may be followed by grinding and polishin...

Embodiment 2

[0048] Prepare mixed powder according to the following weight components:

[0049] Tungsten carbide, 92.8%, Fischer particle size 0.8-1μm;

[0050] Nickel powder, 6%, Fischer particle size 0.5-1.0μm;

[0051] Chromium carbide, balance.

[0052] The mixed powder with the above ratio is wet-milled; the ball milling time is controlled in sections; firstly, the carbide powder and the additive chromium carbide are added to the ball mill barrel for wet milling for 16 hours, and then nickel powder is added for wet milling for 18 hours.

[0053] The ball milled mixture slurry was dried.

[0054] The dry mix is ​​pressed into compacts of the desired shape.

[0055] The pressed product was sintered at high temperature in a sintering furnace, the sintering temperature was 1470°C, the holding time was 90min, and the sintering pressure was 5.0Mpa to obtain a tungsten-nickel alloy matrix.

[0056] Substrate pretreatment. The substrate pretreatment may be followed by grinding and polishi...

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Abstract

The invention discloses a preparation method of a tungsten-nickel alloy dielectric material with a barium titanate thin film. The dielectric material prepared by adopting the preparation method can beused for solving the problems of a 'nickel pool' and holes which frequently appear in the traditional fine grain hard alloy preparation process, and a multilayer thin film structure not only can hinder migration of oxygen vacancies but also can increase in-plane compressive stress of a BaTiO3 thin film, so that the effects of reducing dielectric loss and improving dielectric constant can be realized, and the problems that leakage current and dielectric loss are increased as an existing BaTiO3 thin film produces the oxygen vacancies due to preparation and service and even the BaTiO3 thin filmis disabled are solved.

Description

technical field [0001] The invention relates to the field of dielectric material manufacturing, in particular to a method for preparing a tungsten-nickel alloy dielectric material with a barium titanate thin film. Background technique [0002] BaTiO3 films with high dielectric constant have important application prospects in the fields of embedded capacitors and high energy storage components, especially the direct deposition of BaTiO3 films on Ni, Cu and other base metal substrates has attracted widespread attention in recent years, especially, The residual stress caused by the mismatch between the substrate and the film and the leakage current caused by the migration and redistribution of oxygen vacancies have attracted people's attention. [0003] WC-Ni cemented carbide has the characteristics of high strength, high hardness, excellent wear resistance, heat resistance and good corrosion resistance, so it is widely used in high pressure, high speed, high temperature, corro...

Claims

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Application Information

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IPC IPC(8): C22C29/08C22C1/05C22C1/10C23C14/35C23C14/08
CPCC22C29/08C22C1/051C22C29/067C23C14/088C23C14/35
Inventor 不公告发明人
Owner QINGDAO XIANGZHI ELECTRONICS TECH CO LTD