Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and a method for forming the same, the method comprising: forming a base, including a substrate, a gate structure located on the substrate, source and drain doped regions located in the base on both sides of the gate structure, and a gate structure located on the base and covering the gate structure. The interlayer dielectric layer on the top of the pole structure; the first contact opening exposing the source and drain doped regions is formed in the interlayer dielectric layer on both sides of the gate structure; the source and drain doped regions exposed by the first contact opening are pre-amorphized processing to form an amorphous layer; performing recrystallization treatment on a part of the amorphous layer near the source-drain doping region; forming a metal silicide layer at the bottom of the first contact opening; forming a first contact hole plug in the first contact opening. The present invention repairs the defects at the range end of the pre-amorphization treatment through the recrystallization treatment, thereby improving the quality and quality uniformity of the metal silicide layer, and avoiding the conduction between the source-drain doped region and the body region, reducing the Small body leakage current.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, the critical dimensions of devices are getting smaller and smaller, and many problems have arisen accordingly. For example, the contact resistance between the contact hole plug and the source-drain doped region increases, which leads to a decrease in the response speed of the semiconductor device, a delay in the signal, and a decrease in the driving current, thereby degrading the performance of the semiconductor device. [0003] In order to reduce the contact resistance between the contact hole plug and the source-drain doped region, a metal silicide process is introduced. The metal silicide has a lower resistivity and can significantly reduce the contact resistance, thereby increasing the driving current. [0004] Wit...

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Problems solved by technology

[0005] However, after the pre-amorphization process is adopted, it is easy to cause the electrical performance and yield of the formed semiconductor structure to decline.

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