Laser crystals doped with holmium, chromium, erbium, thulium and yttrium aluminum garnet, and preparation method thereof

A laser crystal, thulium yttrium aluminum technology, applied in the field of laser crystal and its preparation, can solve the problems of serious pumping heat effect, reduced output power or energy, low laser output power or energy, etc., and achieves improved optical quality and optical uniformity , Improve absorption and utilization, reduce the effect of pump heat

Active Publication Date: 2009-10-21
长汀雷生科技有限责任公司
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Ho:Cr:Tm:YAG crystals reflect some obvious deficiencies in the use of lasers, for example, under the usual pump input power or energy conditions, the obtained laser output power or energy is low; When the output power or energy decreases, the beam quality deteriorates, or even the crystal is damaged or destroyed when working with high-power laser input or high repetition frequency; in order to obtain high-power laser output, double

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser crystals doped with holmium, chromium, erbium, thulium and yttrium aluminum garnet, and preparation method thereof
  • Laser crystals doped with holmium, chromium, erbium, thulium and yttrium aluminum garnet, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Example 1: Preparation of Ho:Cr:Er:Tm:YAG crystal (a=0.012, b=0.18, c=1.5, d=0.05).

[0046] Each oxide raw material Ho 2 o 3 、Tm 2 o 3 、Er 2 o 3 、Cr 2 o 3 , Y 2 o 3 and Al 2 o 3 According to the chemical formula Ho x T m y Er z Y 3-x-y-z Cr m Al 5-d o 12 Proportion calculation and weighing, wherein, x=0.012, y=0.18, z=1.5, m=0.03, the total weight of raw materials is 1600g, and the crucible size is ф90×90mm. The purity of each oxide is 5N-6N. Put each oxide raw material into a container, mix them evenly, put them into a latex bag, and statically press them into a hydraulic press. Put the compressed crystal pulling material into the crucible in the crystal growth furnace, and place 10g of desiccant P near the inner wall of the furnace 2 o 5 Then close the oven door. Vacuum until the pressure in the furnace is not greater than 5×10 -2 After Pa, start vacuum drying, that is, heat to 200°C while continuing to vacuumize, and keep a constant temperatur...

Embodiment 2~8 and comparative example 1

[0048] The operating methods of Examples 2-8 and Comparative Example 1 are the same as Example 1. The crystal chemical composition and main preparation process parameters of each embodiment and comparative example are shown in Table 3.

[0049]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses Ho:Cr:Er:Tm:YAG-doped laser crystals and a preparation method thereof. The chemical composition of the laser crystal is Ho[a]Tm[b]Er[c]Y[3-a-b-c]Cr[d]Al[5-d]O[12], wherein a is more than 0.003, and less than or equal to 0.018; b is more than or equal to 0.06, and less than or equal to 0.30, c is more than 0, and less than or equal to 1.5; and d is more than 0, and less than or equal to 0.25. The method for preparing the Ho:Cr:Er:Tm:YAG-doped laser crystals comprises the following steps: (1) placing desiccant in a crystal growth furnace to absorb moisture in an atmosphere in the furnace; (2) vacuumizing the crystal growth furnace and performing continuous baking for 8 to 12 hours at a temperature of between 200 and 500 DEG C when the pressure in the furnace is not greater than 5*10 Pa so as to remove the moisture in the furnace; (3) filling the furnace with argon gas or nitrogen of which the water content is not higher than 1.5 ppm; and (4) treating Ho:Cr:Er:Tm:YAG-doped crystals grown in an inert atmosphere in a muffle furnace for 15 to 20 hours at a high temperature of 1,300 DEG C. The preparation method can further improve the rate of Ho-doped crystals in absorbing and utilizing flashlamp pumped energy, and has the advantages of improving the optical quality and optical homogeneity of the crystals, reducing the thermal effect of pumping, reducing laser loss, reducing pumping threshold and improving laser efficiency.

Description

technical field [0001] The invention relates to a laser crystal and a preparation method thereof, in particular to a laser crystal doped with holmium, chromium, erbium and thulium yttrium aluminum garnet and a preparation method thereof. Background technique [0002] The holmium (Ho) laser with a wavelength of 2.1 μm can be strongly absorbed by human tissues and has a shallow penetration depth. Therefore, it is used in laser surgery with little damage to human tissues and has ideal resection, vaporization, ablation and coagulation effects. Moreover, the precision of surgical control is high, and it is especially suitable for surgery on lesions with dense nerves and blood vessels. Ho laser can be used in anhydrous (low OH - Ion content) silica optical fiber transmission, low transmission loss, high efficiency, easy to make an efficient optical fiber transmission laser medical system. Therefore, the Ho laser surgical treatment instrument has been widely used in human body su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/28C30B15/00H01S3/16
Inventor 郑东阳朱建慧李兴旺舒俊莫小刚王永国桂尤喜徐学珍
Owner 长汀雷生科技有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products