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Preparation method of ZnO micrometer/nanometer column LED

A nano-column, n-type technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high cost and complicated preparation process of ZnO nano-column, and achieve the effect of low cost, high effective utilization rate and simple equipment

Active Publication Date: 2018-07-06
WUYI UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the preparation process of ZnO nanocolumns is more complicated, the cost is higher, and it has not completely replaced GaN

Method used

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  • Preparation method of ZnO micrometer/nanometer column LED
  • Preparation method of ZnO micrometer/nanometer column LED
  • Preparation method of ZnO micrometer/nanometer column LED

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Embodiment Construction

[0028] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0029] Such as figure 1 with figure 2 Shown, a kind of preparation method of ZnO micron / nanocolumn LED, comprises the following steps:

[0030] S1), spin coating photoresist on the p-type substrate 1, wherein, the substrate is a 2-inch single crystal LaAlO 3 ;

[0031] S2), using a pre-prepared mask plate for ultraviolet exposure and development treatment, to obtain the window for the growth of nano-columns, that is, to obtain a patterned substrate, the growth window is circular, and the diameter is 150nm, and the distance between the centers of the nano-columns is 0.5 microns ;

[0032] S3), put the patterned substrate into the ZnO solution doped with p-type dopant atoms Mg and Na atoms, grow p-type ZnO nanocolumns at 80°C for 28 hours, and use a magnetic stirrer to continuously stir during the growth process , to ensure the uniformity of t...

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Abstract

The invention provides a preparation method of a ZnO micrometer / nanometer column LED. A p-type ZnO nanometer column is prepared by using a hydrothermal method, doping can be controlled preferably, andthe doping concentration is increased; moreover, H atoms can be avoided from entering into ZnO, so that the generation of an Mg-H compound is avoided, and the activation concentration of Mg atoms isincreased; moreover, compound doping of multiple elements is facilitated, and favorable conditions are created for the preparation of the p-type ZnO with high hole concentration; moreover, the hydrothermal method is high in controllability, simple in equipment and low in cost, and is beneficial for reducing the production cost; on the other hand, Ga source and In source are cancelled completely due to Zn, so that precious resources are saved, and the effective utilization rate of precious resources is improved; and moreover, ZnO is non-toxic and is beneficial for realizing green production, sothat the environment is protected.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a method for preparing ZnO micron / nano column LEDs. Background technique [0002] Because light-emitting diodes (LEDs) have many advantages such as energy saving, environmental protection, and long life, LEDs have been widely used in various color display screens, LCD backlights, indicator lights, and white light lighting. [0003] At present, most LEDs are based on GaN semiconductor materials. However, due to relatively expensive manufacturing equipment, limited resources, and difficulties in thin film epitaxy, GaN materials limit their sustainable development. Due to the high refractive index of LED materials (GaN refractive index n≈2.5 ), total internal reflection and Fresnel loss are very serious, only a small part of the light is extracted from the LED, which limits the luminous efficiency of the LED. In response to this problem, people construct microstructures on the surface...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/28
CPCH01L33/0087H01L33/28
Inventor 杨为家何鑫刘俊杰王诺媛刘铭全刘艳怡越韵婷肖俊东段峰刘均炎
Owner WUYI UNIV
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