Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and a method for forming the same, the method comprising: providing a substrate, an interlayer dielectric layer is formed on the substrate, an opening exposing part of the substrate is provided in the interlayer dielectric layer, a stacked structure is formed on the bottom and side walls of the opening, and the stacked structure It is also located on the top of the interlayer dielectric layer; at least the laminated structure located on the top of the interlayer dielectric layer is removed; after at least part of the laminated structure is removed, the substrate is annealed; after the annealing, the metal layer is filled in the opening to form grid structure. The present invention reduces the length of the laminated structure by at least removing the laminated structure at the top of the interlayer dielectric layer; thereby reducing the expansion (or contraction) of the laminated structure and correspondingly reducing the laminated structure The possibility of cracking due to excessive stress, in order to reduce the gate leakage current, improve the isolation effect between the contact hole plug and the gate structure in the semiconductor structure, and then improve the electrical performance and yield of the formed semiconductor structure improve.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] The main semiconductor device of an integrated circuit, especially a very large scale integrated circuit, is a metal-oxide-semiconductor field effect transistor (MOS transistor). With the continuous development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices continue to decrease, and the geometric dimensions of semiconductor devices follow Moore's law. When the size of semiconductor devices is reduced to a certain extent, various secondary effects brought about by the physical limits of semiconductor devices appear one after another, and it becomes more and more difficult to scale down the feature size of semiconductor devices. Among them, in the field of semiconductor manufacturing, how to solve the problem of large leakage current of semiconductor de...

AI Technical Summary

Problems solved by technology

[0004] Although the introduction of high-k metal gates can improve the electrical performance of semiconductor devices to a certain extent, the electrical performance and yield of semiconductor devices formed by the prior art still need to be improved

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