Single suspension beam gas sensor, sensor array and preparation method of sensor

A technology of gas sensor and cantilever beam, which is applied in the fields of MEMS and gas detection, can solve the problems of difficult positioning, low efficiency, complicated process, etc., and achieve the effects of easy preparation, improved production efficiency, and simple process

Pending Publication Date: 2018-07-24
HEFEI MICRO NANO SENSING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the power consumption of these multi-cantilever gas sensors is low, with the rapid development of mobile terminals and Internet of Things applications, they can no l

Method used

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  • Single suspension beam gas sensor, sensor array and preparation method of sensor
  • Single suspension beam gas sensor, sensor array and preparation method of sensor
  • Single suspension beam gas sensor, sensor array and preparation method of sensor

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0058] Embodiment one

[0059] A method for preparing a single cantilever gas sensor, comprising the following steps:

[0060] (1) Choose a silicon wafer with a crystal orientation of as the substrate, with a resistivity of 3-8Ωcm, a silicon wafer thickness of 350±10μm, and an angle error of trimming <1%;

[0061] (2) On the substrate, a layer with a thickness of of silicon oxide and a layer thickness of of silicon nitride;

[0062] (3) Fabrication of heating resistor 3: The heating resistance wire of platinum resistance is produced by stripping process, with a thickness of

[0063] (4) Make isolation film 4: Utilize plasma enhanced chemical vapor deposition to make silicon oxide or silicon nitride as isolation film 4, the thickness of isolation film 4 is Then use reactive ion etching or ion beam etching to etch the isolation film 4 to form a through hole 44 to expose the heating resistor 3 below;

[0064] (5) make detecting electrode 5: utilize stripping process to...

Example Embodiment

[0067] Embodiment two

[0068] A method for preparing a single cantilever gas sensor, comprising the following steps:

[0069] (1) Take a silicon wafer as the substrate, its resistivity is 3-8Ωcm, the thickness of the silicon wafer is 350±10 μm, and the angle error of trimming is <1%;

[0070] (2) On the substrate, a layer with a thickness of of silicon oxide and a layer thickness of of silicon nitride;

[0071] (3) Fabrication of heating resistor 3: The heating resistance wire of platinum resistance is produced by stripping process, with a thickness of

[0072] (4) Make isolation film 4: Utilize plasma enhanced chemical vapor deposition to make silicon oxide or silicon nitride as isolation film 4, the thickness of isolation film 4 is Then use reactive ion etching or ion beam etching to etch the isolation film 4 to form a through hole 44 to expose the heating resistor 3 below;

[0073] (5) make detecting electrode 5: utilize stripping process to make material be the ...

Example Embodiment

[0076] Embodiment three

[0077] A method for preparing a single cantilever gas sensor, comprising the following steps:

[0078] (1) Take a silicon wafer as the substrate, its resistivity is 3-8Ωcm, the thickness of the silicon wafer is 350±10 μm, and the angle error of trimming is <1%;

[0079] (2) On the substrate, a layer with a thickness of of silicon oxide and a layer thickness of of silicon nitride;

[0080] (3) Fabrication of heating resistor 3: The heating resistance wire of platinum resistance is produced by stripping process, with a thickness of

[0081] (4) Make isolation film 4: Utilize plasma enhanced chemical vapor deposition to make silicon oxide or silicon nitride as isolation film 4, the thickness of isolation film 4 is Then use reactive ion etching or ion beam etching to etch the isolation film 4 to expose the heating resistor 3 below;

[0082] (5) make detecting electrode 5: utilize stripping process to make material be the detecting electrode 5 of...

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Abstract

The invention discloses a single suspension beam gas sensor which comprises a silicon substrate, a support membrane, a heating resistor, an isolation membrane and a detection electrode which are successively laminated in arrangement. The gas sensor takes on a T-shape and has a basal body structure and a suspension arm structure, and an end part of the suspension arm structure is provided with a gas sensitive material. The invention further provides a sensor array, which consists of the single suspension beam gas sensor, and a preparation method of the gas sensor, wherein the method comprises the following steps of (1) selection of the silicon substrate; (2) preparation of the support membrane; (3) preparation of the heating resistor; (4) preparation of the isolation membrane; (5) preparation of the detection electrode; (6) release of a thin membrane; and (7) loading of the gas sensitive material. The single suspension beam gas sensor has the advantages that the sensor is low in power consumption, small in size, high in integration level, simple in production process and easy to locate, and improves the production efficiency effectively.

Description

technical field [0001] The invention belongs to the technical field of microelectromechanical systems and gas detection, and in particular relates to a single suspension beam gas sensor, a sensor array and a preparation method of the sensor. Background technique [0002] Gas sensors based on microelectromechanical systems (MEMS) technology, due to their small size, low power consumption, high sensitivity and fast response, gradually show great application potential, and are expected to replace gas sensors based on traditional technologies. It is widely used in the fields of networking, mobile terminal and artificial intelligence. In the MEMS gas sensor, because the sensor using the metal oxide semiconductor (MOS) material has a wide detection range, it has a broader market space in the future large-scale application. [0003] At present, among the MEMS MOS gas sensors, the research based on the suspended film micro-heater is the majority. The sensor with this structure has ...

Claims

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Application Information

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IPC IPC(8): G01N27/12
CPCG01N27/128G01N27/14G01N27/12H10N30/1051H10N30/306H10N30/50H10N30/853G01N27/16
Inventor 许磊谢东成彭书峰
Owner HEFEI MICRO NANO SENSING TECH CO LTD
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