Pulsed laser deposition device and method thereof
A pulsed laser deposition and laser technology, which is applied in the laser field, can solve problems such as large particles, thin films affecting crystallization performance, and large fluctuations in plasma components, so as to reduce the generation of droplets, improve crystallization performance and uniformity, The effect of reducing foreign particles
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[0028] Example one
[0029] figure 1 The structure of a pulsed laser deposition device provided by the embodiments of this application, pulsed laser deposition (PulsedLaser Deposition, PLD), also known as pulsed laser ablation (PLA), is a kind of laser Bombardment, and then deposit the bombarded substances on different substrates, a means of obtaining precipitation or thin films. That is, the high-power pulsed laser is focused on the surface of the target material to generate high temperature and ablation on the surface, and further generate high-temperature and high-pressure plasma. The plasma is oriented and locally expanded and preferably transmitted along the normal direction of the target, forming a plume Finally, the ablation is deposited on the front substrate to form a thin film. Due to the high energy of the laser, refractory films can be deposited, making it almost capable of depositing various existing film materials and maintaining the stoichiometric composition of t...
Example Embodiment
[0037] Example two
[0038] The embodiments of the application also provide a pulsed laser deposition method, such as figure 2 As shown, figure 2 This is a schematic flow chart of a pulsed laser deposition method provided by an embodiment of this application, and the method includes:
[0039] Step 110: Put the substrate 6 into acetone, isopropanol, and ultrapure water in sequence for 5 minutes ultrasonic cleaning, and dry with nitrogen;
[0040] Step 120: Put the substrate 6 into the chamber 1 of the pulsed laser deposition device, evacuate the chamber 1 to a vacuum state, rotate the substrate 6 to start heating, and the rotatable target 5 Adopt baffle to isolate, pass process gas, the flow rate of the process gas is 0-100sccm, and the process pressure in the chamber is 10 -4 -10 -8 Pa;
[0041] Step 130: Rotate the rotatable target 5, open the target baffle, first use the first laser 3 to preheat the rotatable target, and then use the second laser 4 to excite the plasma depositio...
Example Embodiment
[0042] Example three
[0043] The embodiment of the present application also provides a pulsed laser deposition method. The first laser 3 and the second laser 4 are incident on the upper surface of the rotatable target 5 through the same quartz window 2, and the method includes:
[0044] Step 110: Put the substrate 6 into acetone, isopropanol, and ultrapure water in sequence for 5 minutes ultrasonic cleaning, and dry with nitrogen;
[0045] Step 120: Put the substrate 6 into the chamber 1 of the pulsed laser deposition device, evacuate the chamber 1 to a vacuum state, rotate the substrate 6 to start heating, and the rotatable target 5 Adopt baffle to isolate, pass process gas, the flow rate of the process gas is 0-100sccm, and the process pressure in the chamber is 10 -4 -10 -8 Pa;
[0046] Step 130: Rotate the rotatable target material 5, open the target baffle, and first use the first laser 3 to be incident on the upper surface of the rotatable target material 5 through the quartz w...
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