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Pulsed laser deposition device and method thereof

A pulsed laser deposition and laser technology, which is applied in the laser field, can solve problems such as large particles, thin films affecting crystallization performance, and large fluctuations in plasma components, so as to reduce the generation of droplets, improve crystallization performance and uniformity, The effect of reducing foreign particles

Inactive Publication Date: 2018-07-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The embodiment of the present application provides a pulsed laser deposition device and its method to solve the problem of large fluctuations in plasma components and large particles in the film formation process of the existing pulsed laser deposition system, which leads to impurity particles in the film that affect the crystallization performance. The problem is to improve the controllability of the plasma components to reduce the generation of droplets, thereby improving the crystallization performance and uniformity of the film, reducing the impurity particles in the film, and preparing a high-quality film.

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Embodiment 1

[0029] figure 1 The structure of a pulsed laser deposition device provided for the embodiment of the present application, pulsed laser deposition (PulsedLaser Deposition, PLD), also known as pulsed laser ablation (pulsed laser ablation, PLA), is a method of using laser to process objects Bombardment, and then deposit the bombarded substances on different substrates to obtain a means of precipitation or thin film. That is, the high-power pulsed laser is focused on the surface of the target to generate high temperature and ablation on the surface, and further generate high-temperature and high-pressure plasma. , and finally the ablative is deposited on the front substrate to form a thin film. Due to the high energy of the laser, refractory thin films can be deposited, making it possible to deposit almost all existing thin film materials and maintain the stoichiometric composition of the target. like figure 1 As shown, the structure includes:

[0030] A chamber 1, the chamber...

Embodiment 2

[0038] The embodiment of the present application also provides a pulsed laser deposition method, such as figure 2 as shown, figure 2 A schematic flow chart of a pulsed laser deposition method provided in an embodiment of the present application, the method includes:

[0039] Step 110: Put the substrate 6 into acetone, isopropanol, and ultrapure water in turn for 5 minutes of ultrasonic cleaning, and blow dry with nitrogen;

[0040] Step 120: Put the substrate 6 into the chamber 1 of the pulsed laser deposition device, evacuate the chamber 1 into a vacuum state, rotate the substrate 6, start heating, and the rotatable target 5 Use baffles to isolate and pass process gas, the flow rate of the process gas is 0-100 sccm, and the process pressure in the chamber is 10 -4 -10 -8 Pa;

[0041] Step 130: Rotate the rotatable target 5, open the target baffle, first use the first laser 3 to preheat the rotatable target, and then use the second laser 4 to excite to generate a plasma ...

Embodiment 3

[0043] The embodiment of the present application also provides a pulsed laser deposition method, the first laser 3 and the second laser 4 are incident on the upper surface of the rotatable target 5 through the same quartz window 2, and the method includes:

[0044] Step 110: Put the substrate 6 into acetone, isopropanol, and ultrapure water in turn for 5 minutes of ultrasonic cleaning, and blow dry with nitrogen;

[0045] Step 120: Put the substrate 6 into the chamber 1 of the pulsed laser deposition device, evacuate the chamber 1 into a vacuum state, rotate the substrate 6, start heating, and the rotatable target 5 Use baffles to isolate and pass process gas, the flow rate of the process gas is 0-100 sccm, and the process pressure in the chamber is 10 -4 -10 -8 Pa;

[0046] Step 130: Rotate the rotatable target 5, open the target baffle, first use the first laser 3 to incident on the upper surface of the rotatable target 5 through the quartz window 2a, preheat the rotatable...

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Abstract

The embodiment of the invention provides a pulsed laser deposition device comprising a cavity, a first laser and a second laser. The cavity is provided with two quartz windows and comprises rotary target material arranged in the cavity, and a substrate arranged in the cavity. The substrate and the rotary target material are arranged oppositely. The first laser is emitted to the upper surface of the rotary target material from the outside of the cavity through the quartz windows. The second laser is emitted to the upper surface of the rotary target material from the outside of the cavity through the quartz windows. The problems that in the film forming process of an existing pulsed laser deposition system, plasma component fluctuation is great, large particles are liable to appear, consequently impurity particles are liable to appear in a film, and the crystallization property is influenced are solved. The technical effects that the crystallization property and uniformity of the film are improved, impurity particles in the film are reduced, and the high-quality film is obtained are achieved.

Description

technical field [0001] The invention relates to the field of laser technology, in particular to a pulsed laser deposition device and a method thereof. Background technique [0002] Laser pulse deposition is used to prepare various thin film materials while maintaining the stoichiometric composition of the target. [0003] However, in the process of realizing the technical solution of the invention in the embodiment of the present application, the inventor of the present application found that the above-mentioned technology has at least the following technical problems: [0004] During the film formation process of the existing pulsed laser deposition system, the plasma composition fluctuates greatly, and large particles are prone to appear, resulting in impurity particles easily appearing in the film and affecting the crystallization performance. Contents of the invention [0005] The embodiment of the present application provides a pulsed laser deposition device and its ...

Claims

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Application Information

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IPC IPC(8): C23C14/28
CPCC23C14/28
Inventor 彭明娣卢维尔夏洋赵丽莉李楠
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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