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Plasma etching and deposition equipment and method

A technology of plasma and deposition equipment, applied in discharge tubes, electrical components, circuits, etc., can solve the problem of waste liquid polluting the environment, etc., and achieve good results, controllable etching or deposition process, uniform film quality and no pinholes Effect

Pending Publication Date: 2018-07-31
SOUTHWEST FORESTRY UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Plasma etching has the advantages of high etching rate, good uniformity and selectivity, and overcomes the disadvantages of waste liquid pollution caused by wet etching

Method used

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  • Plasma etching and deposition equipment and method
  • Plasma etching and deposition equipment and method
  • Plasma etching and deposition equipment and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] like Figure 1 to Figure 8 As shown, a plasma etching and deposition equipment includes a reaction chamber 1, an upper body 2, a lower body 3, an upper electrode, and a lower electrode 18;

[0048]The upper electrode includes an air inlet 8, a long rod 11, a ceramic rod 702, a ceramic protective cover 7, and an upper electrode plate 4. The air inlet 8 is provided at one end of the long rod 11 and one end of the ceramic rod 702. The ceramic rod fixing bolt 703 is connected to the end of the long rod 11 away from the air inlet 8, and the other end of the ceramic rod 702 is connected to the upper pole plate 4 by the ceramic rod fixing bolt 703. The ceramic protective cover 7 is arranged outside the ceramic rod 702, and is connected to the long rod 11 and the upper pole plate 4 through the ceramic protective cover fixing bolts 701;

[0049] The long rod 11 is hollow inside, the ceramic rod 702 is hollow inside, and the upper pole plate 4 is hollow inside, and the long rod ...

Embodiment 2

[0064] A plasma etching method is carried out according to the following steps:

[0065] Step A: heating the lower electrode plate through the thermocouple 501 arranged in the lower electrode plate 5, and the heating temperature is 110°C;

[0066] Step B: Put the material to be plasma-etched into the lower plate 5 of the reaction chamber through the sealing door 13;

[0067] Step C: adjust the distance between the upper and lower pole plates to 29mm through the height adjustment device 12;

[0068] Step D: After closing the sealing door 13, turn on the vacuum pump 904 to evacuate, so that the vacuum degree in the reaction chamber 1 is less than 1.3Pa;

[0069] Step E: pass the reaction gas into the reaction chamber 1 through the air inlet 8;

[0070] Step F: stabilize the gas pressure in the reaction chamber 1 at 65 Pa by adjusting the pumping rate adjustment knob 901;

[0071] Step G: start the radio frequency power supply 6 to discharge, and the discharge power is 120W; ...

Embodiment 3

[0074] A plasma deposition method is carried out according to the following steps:

[0075] Step A: heating the lower electrode plate through the thermocouple 501 arranged in the lower electrode plate 5, and the heating temperature is 110°C;

[0076] Step B: Put the material to be modified by plasma deposition into the lower plate 5 of the reaction chamber through the sealing door 13;

[0077] Step C: adjust the distance between the upper and lower pole plates to 29mm through the height adjustment device 12;

[0078] Step D: After closing the sealing door 13, turn on the vacuum pump 904 to evacuate, so that the vacuum degree in the reaction chamber 1 is less than 1.3Pa;

[0079] Step E: pass the reaction gas into the reaction chamber 1 through the air inlet 8;

[0080] Step F: stabilize the gas pressure in the reaction chamber 1 at 130 Pa by adjusting the pumping rate adjustment knob 901;

[0081] Step G: start the radio frequency power supply 6 to discharge, and the discha...

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Abstract

The invention provides plasma etching and deposition equipment and method. The equipment and method have relatively high etching or deposition efficiency, a controllable etching or deposition process,uniform and pin-hole-free deposited film and a relatively high effect; the equipment is provided with an observation window, so that the etching or deposition process can be observed in a relativelyvisual manner; a heating apparatus is arranged in a lower electrode plate, and a thermoelectric couple is adopted for heating to heat a to-be-etched or deposited modified material to promote the reaction to be complete and to improve reaction rate; and a Langmuir probe inlet is formed in the equipment shell, so that the probe can extend into a reaction region between upper and lower electrode plates in the reaction process.

Description

technical field [0001] The invention belongs to the technical field of plasma etching and deposition, and in particular relates to a plasma etching and deposition equipment and method. Background technique [0002] Plasma technology is an emerging science developed on the basis of the interdisciplinary of physics, chemistry, electronics, vacuum technology and other disciplines since the 1960s. In recent decades, plasma technology has been widely used in the fields of material science, medicine, biology, environmental science, metallurgy, chemical industry, light industry and textile. [0003] Plasma is a non-condensed system produced by partially ionizing a gas under specific conditions. It consists of neutral atoms or molecules, excited atoms or molecules, free radicals, electrons or negative ions, positive ions, and radiation photons. The ionized gas, which appears to be approximately electrically neutral, is another aggregation state that is different from the existence ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J37/317
CPCH01J37/317H01J37/3244H01J37/32458H01J37/32532H01J2237/3322H01J2237/334
Inventor 解林坤
Owner SOUTHWEST FORESTRY UNIVERSITY
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