Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A surface-enhanced Raman substrate and its preparation method

A substrate and substrate technology, applied in the field of surface-enhanced Raman substrate and its preparation

Active Publication Date: 2021-03-09
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this scheme is that the surface-enhanced Raman effect of the obtained surface-enhanced Raman substrate, as well as the detection sensitivity and detection limit need to be further improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A surface-enhanced Raman substrate and its preparation method
  • A surface-enhanced Raman substrate and its preparation method
  • A surface-enhanced Raman substrate and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] This embodiment provides a method for preparing a surface-enhanced Raman substrate, the specific method of which is:

[0088] (1) Clean the silicon (100) substrate, mix the negative electron beam resist HSQ and the positive electron beam resist PMMA 950k according to the volume ratio of 1:1, and ultrasonically disperse the mixed resist solution for 30 minutes. The e-beam resist was spin-coated to a thickness of 250 nm on a silicon substrate to obtain a coated substrate.

[0089] (2) On the coated substrate described in step (1), use an electron beam with a beam spot diameter of 6 nm to expose the electron beam resist, and adjust the exposure dose to 190000 μC / cm 2 The hexagonal nano-array pattern is directly written to obtain a substrate on which the nano-array pattern is written. The area of ​​the nano-array pattern is 150 μm×150 μm, and the layout design line width of the nano-array pattern is 6 nm.

[0090] (3) Develop the substrate written in the nanoarray pattern ...

Embodiment 2

[0098] This embodiment provides a method for preparing a surface-enhanced Raman substrate, the specific method of which is:

[0099] (1) Clean the silicon (100) substrate, mix the negative electron beam resist HSQ and the positive electron beam resist ZEP520 according to the volume ratio of 3:2, ultrasonically disperse the mixed resist solution for 5 minutes, and The e-beam resist was spin-coated to a thickness of 400 nm on a silicon substrate to obtain a coated substrate.

[0100] (2) On the coated substrate described in step (1), use an electron beam with a beam spot diameter of 4 nm to expose the electron beam resist, and adjust the exposure dose to 120000 μC / cm 2 The hexagonal nano-array pattern is directly written to obtain a substrate on which the nano-array pattern is written. The area of ​​the nano-array pattern is 250 μm×250 μm, and the layout design line width of the nano-array pattern is 4 nm.

[0101] (3) Develop the substrate written in the nanoarray pattern desc...

Embodiment 3

[0107] This embodiment provides a method for preparing a surface-enhanced Raman substrate, the specific method of which is:

[0108] (1) Clean the silicon (100) substrate, mix the negative electron beam resist HSQ and the positive electron beam resist PMMA 950k according to the volume ratio of 1:3, and ultrasonically disperse the mixed resist solution for 2 minutes, The e-beam resist was spin-coated to a thickness of 4800 nm on a silicon substrate to obtain a coated substrate.

[0109] (2) On the coated substrate described in step (1), use an electron beam with a beam spot diameter of 1 nm to expose the electron beam resist, and adjust the exposure dose to 200000 μC / cm 2 The triangular nano-array pattern is directly written to obtain a base on which the nano-array pattern is written. The area of ​​the nano-array pattern is 10 μm×10 μm, and the layout design line width of the nano-array pattern is 1 nm.

[0110] (3) Develop the substrate written in the nanoarray pattern descri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a surface-enhanced Raman substrate and a preparation method thereof. The Raman substrate includes a composite structure formed by a nano-network structure and a nano-spherical structure on the nano-network structure, and metal particles on the surface of the composite structure. The preparation method of the Raman substrate comprises the following steps: (1) mixing a positive electron beam resist and a negative electron beam resist to obtain a mixed electron beam resist, and mixing the mixed electron beam resist (2) forming a nano-array pattern on the coated substrate, developing to obtain a nanostructure, and depositing metal on the nanostructure to obtain the Raman substrate . The surface-enhanced Raman substrate provided by the present invention has excellent surface-enhanced Raman effect and excellent detection sensitivity, and can significantly improve the uniformity and repeatability of Raman test results.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, and relates to a preparation method of a nanostructure, in particular to a surface-enhanced Raman substrate and a preparation method thereof. Background technique [0002] Surface-enhanced Raman scattering is widely used in the detection and analysis of single molecules and single cells in chemistry, biomedicine and other related fields because of its single-molecule specific recognition, fast data acquisition, and high sensitivity. Among them, the substrate plays a decisive role in the enhancement effect. In recent years, it has been found that the metal / dielectric material composite nanostructure will bring more significant Raman enhancement effect than the traditional single metal nanostructure. This is closely related to the strong interaction between light and the metal / dielectric material interface. [0003] Compared with chemical synthesis methods, the surface-enhanced Raman substr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/65B82Y15/00B82Y40/00
CPCB82Y15/00B82Y40/00G01N21/658
Inventor 陈佩佩田毅闫兰琴褚卫国
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com