A method of forming an ultra-low-k dielectric layer
A dielectric layer, ultra-low technology, applied in the field of forming an ultra-low K dielectric layer, can solve the problems of complex porogen process and unfavorable porogen discharge, and achieve the effect of reducing the complex process of removing organic matter
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no. 1 example
[0018] see figure 1 , A method of forming an ultra-low K dielectric layer. Include the following steps: figure 1 As shown in (a), step 1) forms a silicon oxycarbide layer 2 on a silicon substrate 1 by chemical vapor deposition; the raw material gas for forming the silicon oxycarbide layer is CH 4 , O 2 and SiH 4 ; In forming the silicon oxycarbide layer 2, the ratio of carbon to oxygen is between 1:1 and 2:1; figure 1 As shown in (b), step 2) deposit photoresist on the silicon oxycarbide layer 2 to form a photoresist pattern 3 by photolithography or electron beam exposure; the pattern 3 of the photoresist formed is a regular lattice shape The hole-like structure, the thickness of the photoresist pattern is greater than 1.5 μm; the regular lattice-like hole-like structure, the size of the lattice holes 4 is between 2-5 μm; the lattice holes 4 The area accounts for 30%-50% of the total area described by the photoresist pattern; as figure 1 As shown in (c), step 3) implant ...
no. 2 example
[0020] see figure 1 , A method of forming an ultra-low K dielectric layer. Include the following steps: figure 1 As shown in (a), step 1) forms a silicon oxycarbide layer 2 on a silicon substrate 1 by chemical vapor deposition; the raw material gas for forming the silicon oxycarbide layer is CH 4 , O 2 and SiH 4 ; In forming the silicon oxycarbide layer 2, the ratio of carbon to oxygen is between 1:1 and 2:1; figure 1 As shown in (b), step 2) deposit photoresist on the silicon oxycarbide layer 2 to form a photoresist pattern 3 by photolithography or electron beam exposure; the pattern 3 of the photoresist formed is a regular lattice shape The hole structure, the thickness of the photoresist pattern is greater than 1.5 μm; the regular lattice hole structure, the size of the lattice holes 4 is between 2-5 μm; the area of the lattice holes Accounting for 30%-50% of the total area described by the photoresist pattern; as figure 1 As shown in (c), step 3) conducts H through...
no. 3 example
[0022] The ultra-low-k dielectric layer is formed according to the method for implementing the ultra-low-k dielectric layer in the first or second embodiment, and Cu is used as the metal layer to form the interconnection structure and dielectric layer of the chip or integrated circuit. Compared with traditional Cu and silicon oxide systems, the response speed is improved. Compared with the process of using porogens to prepare ultra-low K dielectric layers, the complex process of removing organic matter is reduced, and the use of He and / or H + Ions aggregate to form pores, which can produce smaller and microporous structures. The number of pores can be controlled by controlling the amount of implantation. The distribution of pores can be controlled by using a regular lattice-like pore structure, and the distribution and pores of implanted ions can be controlled. distribution, further controlling the dielectric constant of the material and improving the quality of the ultra-low ...
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