A disclosed preparation method for a silicon carbide nanosheet comprises the following steps: dropwise adding a hexadecyl trimethyl ammonium bromide solution into a bentonite suspension in water bath, after dropwise adding is finished, dropwise adding acetone, after dropwise adding is finished, continuing to stir under same conditions, and finally performing centrifugal separation, washing, baking and grinding; putting the powder into a tubular furnace, carbonizing under protection of N2, putting the carbonized solid into a bottle, adding a hydrochloric acid solution, stirring, performing solid-liquid separation, washing and baking; putting the obtained particle in a tubular furnace, under protection of argon, heating according to a program for calcining, and cooling to room temperature, immersing the calcined product in a mixed acid of hydrofluoric acid and hydrochloric acid, washing off unreacted silicon dioxide, washing by deionized water and drying, so as to obtain the silicon carbide nanosheet. The method employs silicon in bentonite as a raw material and fully utilizes the lamellar structure of bentonite, and the method is cheap in raw material source, controllable in process, and easy for industrialized production.