Preparation method for silicon carbide nanosheet

Abstract

A disclosed preparation method for a silicon carbide nanosheet comprises the following steps: dropwise adding a hexadecyl trimethyl ammonium bromide solution into a bentonite suspension in water bath, after dropwise adding is finished, dropwise adding acetone, after dropwise adding is finished, continuing to stir under same conditions, and finally performing centrifugal separation, washing, baking and grinding; putting the powder into a tubular furnace, carbonizing under protection of N2, putting the carbonized solid into a bottle, adding a hydrochloric acid solution, stirring, performing solid-liquid separation, washing and baking; putting the obtained particle in a tubular furnace, under protection of argon, heating according to a program for calcining, and cooling to room temperature, immersing the calcined product in a mixed acid of hydrofluoric acid and hydrochloric acid, washing off unreacted silicon dioxide, washing by deionized water and drying, so as to obtain the silicon carbide nanosheet. The method employs silicon in bentonite as a raw material and fully utilizes the lamellar structure of bentonite, and the method is cheap in raw material source, controllable in process, and easy for industrialized production.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing silicon carbide nanosheets. Background technique [0002] Silicon carbide (SiC), commonly known as corundum, gemstone name drill pith, is a ceramic-like compound formed by bonding silicon and carbon. Silicon carbide exists in nature as a rare mineral such as moissanite. Silicon carbide powder has been widely used as abrasive since 1893. Sintering silicon carbide powder can produce hard ceramic-like silicon carbide particles, which can be used in materials that require high durability, such as automobile brake pads, clutches and bulletproof vests, in materials such as light-emitting diodes, early radio detectors, etc. It is also used in the manufacture of similar electronic devices. Silicon carbide is widely used today in the manufacture of high-temperature, high-voltage semiconductors. [0003] At present, the main methods fo...

AI Technical Summary

Problems solved by technology

[0004] The preparation methods of two-dimensional SiC nanomaterials mainly have the following problems: (1) high temperature (template method, laser ablation method, arc discharge method, thermal evaporation method, carbothermal reduction method) or high pressure (solvent Thermal method), involving complex process; (2) The product often contains metal impurities (such as metal vapor-liquid-solid (VLS) catalytic growth method) or surface-coated SiO 2 layer (laser ablation method, arc discharge method, carbothermal reduction method), uneven morphology; (3) low yield (template method, solvothermal method)

These problems restrict the preparation of high-purity two-dimensional SiC nanomaterials and the study of their intrinsic properties, and are not conducive to the large-scale production of two-dimensional SiC nanomaterials.