Preparation method for silicon carbide nanosheet

A technology of nanosheets and silicon carbide, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of uneven shape, high pressure, low output, etc., and achieve easy industrial production, The effect of thin interlayer thickness and large specific surface area

Active Publication Date: 2015-12-09
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The preparation methods of two-dimensional SiC nanomaterials mainly have the following problems: (1) high temperature (template method, laser ablation method, arc discharge method, thermal evaporation method, carbothermal reduction method) or high pressure (solvent Thermal method), involving complex process; (2) The product often contains metal impurities (such as metal vapor-liquid-solid (VLS) catalytic g

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Add 10 mmol of cetyl trimethyl ammonium bromide solution dropwise to the suspension containing 10 g of bentonite in a water bath at 65 °C, the concentration of cetyl trimethyl ammonium bromide solution is 1 mol / L, drop Stir continuously during the addition process, add 1 mL of acetone dropwise after the dropwise addition, continue to stir for 2 h under the same conditions after the dropwise addition, centrifuge, wash the obtained solid with deionized water for 5 times, and dry at 105°C. The solid is ground into an 80-mesh powder, during which the cationic surfactant is fixed as a single molecule between the bentonite layers through ion exchange; the powder is placed in a tube furnace through N 2 protection, carbonization at 800°C for 6h, and then continue to pass N 2 After cooling to room temperature, the organic matter is carbonized at high temperature to form carbonaceous sheets between the bentonite layers; put 4 g of the carbonized solid matter into a bottle, add 15...

Embodiment 2

[0016] In a water bath at 60°C, dropwise add 5 mmol of cetyltrimethylammonium bromide solution to the suspension containing 10 g of bentonite, the concentration of cetyltrimethylammonium bromide solution is 4mol / L, drop Stir continuously during the addition process, add 3 mL of acetone dropwise after the dropwise addition, continue stirring for 3 h under the same conditions after the dropwise addition, centrifuge, wash the obtained solid with deionized water for 4 times, and dry at 100 ° C. The solid is ground into a 50-mesh powder, during which the cationic surfactant is fixed as a single molecule between the bentonite layers through ion exchange; the powder is placed in a tube furnace through N 2 protection, carbonization at 500°C for 4h, and then continue to pass N 2 Cool to room temperature, the organic matter is carbonized at high temperature, and carbonaceous sheets are formed between the bentonite layers; put 2 g of the carbonized solid matter into a bottle, add 10 mL o...

Embodiment 3

[0018] Add dropwise 8 mmol of cetyltrimethylammonium bromide solution to the suspension containing 10 g of bentonite in a water bath at 60 °C, the concentration of the cetyltrimethylammonium bromide solution is 4 mol / L, drop Stir continuously during the addition process, add 3 mL of acetone dropwise after the dropwise addition, continue stirring for 2 h under the same conditions after the dropwise addition, centrifuge, wash the obtained solid with deionized water 4 times, and dry at 100 ° C. The solid is ground into an 80-mesh powder, during which the cationic surfactant is fixed as a single molecule between the bentonite layers through ion exchange; the powder is placed in a tube furnace through N 2 protection, carbonization at 800°C for 5h, and then continue to pass N 2 After cooling to room temperature, the organic matter is carbonized at high temperature to form carbonaceous sheets between the bentonite layers; put 4 g of the carbonized solid matter into a bottle, add 15 m...

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PUM

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Abstract

A disclosed preparation method for a silicon carbide nanosheet comprises the following steps: dropwise adding a hexadecyl trimethyl ammonium bromide solution into a bentonite suspension in water bath, after dropwise adding is finished, dropwise adding acetone, after dropwise adding is finished, continuing to stir under same conditions, and finally performing centrifugal separation, washing, baking and grinding; putting the powder into a tubular furnace, carbonizing under protection of N2, putting the carbonized solid into a bottle, adding a hydrochloric acid solution, stirring, performing solid-liquid separation, washing and baking; putting the obtained particle in a tubular furnace, under protection of argon, heating according to a program for calcining, and cooling to room temperature, immersing the calcined product in a mixed acid of hydrofluoric acid and hydrochloric acid, washing off unreacted silicon dioxide, washing by deionized water and drying, so as to obtain the silicon carbide nanosheet. The method employs silicon in bentonite as a raw material and fully utilizes the lamellar structure of bentonite, and the method is cheap in raw material source, controllable in process, and easy for industrialized production.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing silicon carbide nanosheets. Background technique [0002] Silicon carbide (SiC), commonly known as corundum, gemstone name drill pith, is a ceramic-like compound formed by bonding silicon and carbon. Silicon carbide exists in nature as a rare mineral such as moissanite. Silicon carbide powder has been widely used as abrasive since 1893. Sintering silicon carbide powder can produce hard ceramic-like silicon carbide particles, which can be used in materials that require high durability, such as automobile brake pads, clutches and bulletproof vests, in materials such as light-emitting diodes, early radio detectors, etc. It is also used in the manufacture of similar electronic devices. Silicon carbide is widely used today in the manufacture of high-temperature, high-voltage semiconductors. [0003] At present, the main methods fo...

Claims

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Application Information

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IPC IPC(8): C01B31/36B82Y30/00B82Y40/00
Inventor 马建锋刘青姚超
Owner CHANGZHOU UNIV
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