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Preparation method of 3D porous nitrogen-doped graphene film electrode

A nitrogen-doped graphene and graphene technology, applied in the field of graphene, can solve the problems of energy storage limitation and reduction of specific surface area, and achieve the effect of high conductivity and high specific surface area

Inactive Publication Date: 2018-08-17
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the π-π interaction between the currently prepared graphene films, the graphene flakes are easy to pack into a compact structure during the assembly process, resulting in a decrease in the specific surface area, which greatly limits its energy storage.

Method used

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  • Preparation method of 3D porous nitrogen-doped graphene film electrode
  • Preparation method of 3D porous nitrogen-doped graphene film electrode
  • Preparation method of 3D porous nitrogen-doped graphene film electrode

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Experimental program
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Embodiment 1

[0024] A kind of preparation method of present embodiment 3D nitrogen-doped graphene film electrode, it comprises the following steps:

[0025] 1) Graphene oxide reduction and nitrogen doping

[0026] Graphene oxide is dissolved in N-N dimethylamide DMF by magnetic stirring, and preparation concentration is the graphene oxide / DMF solution of 1mg / ml; Get appropriate graphene oxide / DMF solution and ethylenediamine according to volume ratio and be 5: 1 After mixing evenly, place it in an oil bath at 85°C under reflux conditions for 8 hours to reduce graphene oxide to prepare a nitrogen-doped graphene solution; use deionized water to repeatedly wash the prepared nitrogen-doped graphene solution until the filtrate is medium Finally, freeze-dry the nitrogen-doped graphene to prepare nitrogen-doped graphene solid.

[0027] 2) Preparation of 3D porous nitrogen-doped graphene membrane

[0028] The prepared large flake nitrogen-doped graphene is uniformly stirred and dissolved in etha...

Embodiment 2

[0030] A kind of preparation method of present embodiment 3D nitrogen-doped graphene film electrode, it comprises the following steps:

[0031] 1) Graphene oxide reduction and nitrogen doping

[0032] Graphene oxide is dissolved in N-N dimethylamide DMF by magnetic stirring, and preparation concentration is the graphene oxide / DMF solution of 2mg / ml; Get appropriate graphene oxide / DMF solution and ethylenediamine according to volume ratio and be 3: 1 After mixing evenly, put it in an oil bath at 85°C under reflux conditions for 32 hours, and reduce graphene oxide in one step to prepare a nitrogen-doped graphene solution; use deionized water to repeatedly wash the prepared nitrogen-doped graphene solution until the filtrate is medium Finally, freeze-dry the nitrogen-doped graphene to prepare nitrogen-doped graphene solid.

[0033] 2) Preparation of 3D porous nitrogen-doped graphene membrane

[0034] Mix the prepared large flakes and small flakes of nitrogen-doped graphene acco...

Embodiment 3

[0039] A kind of preparation method of present embodiment 3D nitrogen-doped graphene film electrode, it comprises the following steps:

[0040] 1) Graphene oxide reduction and nitrogen doping

[0041] Graphene oxide is dissolved in N-N dimethylamide DMF by magnetic stirring, and preparation concentration is the graphene oxide / DMF solution of 3mg / ml; Get appropriate graphene oxide / DMF solution and ethylenediamine according to volume ratio and be 1: 1 After mixing evenly, put it in an oil bath at 85°C under reflux conditions for 48 hours, and reduce graphene oxide in one step to prepare a nitrogen-doped graphene solution; use deionized water to repeatedly wash the prepared nitrogen-doped graphene solution until the filtrate is medium Finally, freeze-dry the nitrogen-doped graphene to prepare nitrogen-doped graphene solid.

[0042] 2) Preparation of 3D porous nitrogen-doped graphene membrane

[0043] The prepared small flake nitrogen-doped graphene is uniformly stirred and diss...

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Abstract

The invention relates to a preparation method of a 3D porous nitrogen-doped graphene film electrode, and relates to the technical field of graphene. Oxidized graphene is reduced to nitrogen-doped graphene in a one-step method, and large and small nitrogen-doped graphene sheets are mixed according to certain proportion, stirred to a uniform state, and dissolved in an ethanol solution; and a nitrogen-doped graphene film is prepared via vacuum pumping filtration, a vacuum device is removed the moment there is no free water on the film to be filtered, the nitrogen-doped graphene film is then placed in a low-temperature lyophilizer and dried for certain time, and the nitrogen-doped graphene film is peeled from the filtering film completely. A close packing structure of a traditional graphene film is changed, the prepared nitrogen-doped graphene film includes a 3D porous structure and can be widely applied in the energy storage field.

Description

technical field [0001] The invention relates to the technical field of graphene, in particular to the preparation of a 3D porous nitrogen-doped graphene membrane electrode. Background technique [0002] Graphene is carbon atoms connected by strong covalent bonds-π bonds. This connection is both elastic and tough, has excellent mechanical properties and electrical conductivity, and has great potential in mechanics, electricity and biology. Graphene membranes have been widely studied by researchers because of their high specific surface area and high conductivity. However, due to the π-π interaction between the currently prepared graphene films, the graphene flakes are easy to pack into a compact structure during the assembly process, resulting in a decrease in the specific surface area, which greatly limits its energy storage. Contents of the invention [0003] The purpose of the present invention is mainly to prepare a kind of low cost, high specific surface area, high st...

Claims

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Application Information

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IPC IPC(8): H01G11/24H01G11/30H01G11/32H01G11/86
CPCY02E60/13H01G11/86H01G11/24H01G11/30H01G11/32
Inventor 党斐刘益伦杨鹏飞
Owner XI AN JIAOTONG UNIV
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