SnTe-based high-performance thermoelectric material and preparation method thereof
A thermoelectric material and high-performance technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problems of thermoelectric performance research, existing space, etc., to achieve the effect of energy band convergence
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[0044] In one embodiment of the present invention, the preparation method of the above-mentioned SnTe-based high-performance thermoelectric material comprises the following steps:
[0045] (1) Vacuum packaging: Weigh the elemental raw materials Sn, Te, Mn and Ge according to the stoichiometric ratio, mix them evenly, and vacuum-pack them in a quartz tube;
[0046] (2) Melting quenching: heating the quartz tube in step (1), so that the raw materials fully react in a molten state, and quenching to obtain the first ingot;
[0047] (3) Annealing and quenching: reheating the first ingot, performing high-temperature annealing, and then quenching to obtain the second ingot;
[0048] (4): Hot-press sintering: Grinding the second ingot into powder, vacuum hot-press sintering, and cooling to obtain the SnTe-based high-performance thermoelectric material.
[0049] In a preferred embodiment, the process control of the heating and melting reaction in step (2) is as follows: the temperatur...
Embodiment 1
[0055] A high-performance SnTe-based thermoelectric material whose chemical formula is Sn 1-x-y+δ mn x Ge y Te (x=0.2~0.3, y=0.05~0.25, δ=0.03~0.08), in this embodiment, by taking δ=0, y=0.05 and x=0.2, 0.25, 0.3, according to the following preparation method, get Sn with different Mn concentrations 0.95-x mn x Ge 0.05 Te bulk material, the preparation method is as follows:
[0056] (1) Vacuum packaging: according to the stoichiometric ratio, weigh the elemental Sn, Te, Mn, Ge, as raw materials according to the chemical formula Sn 1-x-y+δ mn x Ge y After the Te is mixed evenly, it is vacuum-packed in a carbon-coated quartz tube;
[0057] (2) Melting quenching: heating the quartz tube with the raw material at a rate of 200K / h, heating from room temperature to 1273K, and keeping it warm for 4 hours to fully react the raw material in a molten state, and then quenching to obtain the first ingot;
[0058] (3) Annealing and quenching: reheating the ingot obtained in step (2...
Embodiment 2
[0064] A high-performance SnTe-based thermoelectric material whose chemical formula is Sn 1-x-y+δ mn x Ge y Te (x=0.2~0.3, y=0.05~0.25, δ=0.03~0.08), in the present embodiment by taking x=0.2, y=0.05 and δ=0.03, 0.04, 0.05, 0.06, 0.07, 0.08 according to the following According to the above preparation method, Sn with different carrier concentration concentration can be obtained 0.75+δ mn 0.2 Ge 0.05 Te bulk material, the preparation method is as follows:
[0065] (1) Vacuum packaging: according to the stoichiometric ratio, weigh the elemental Sn, Te, Mn, Ge, as raw materials according to the chemical formula Sn 1-x-y+δ mn x Ge y After the Te is mixed evenly, it is vacuum-packed in a carbon-coated quartz tube;
[0066] (2) Melting quenching: heating the quartz tube with the raw material at a rate of 200K / h, heating from room temperature to 1273K, and keeping it warm for 4 hours to fully react the raw material in a molten state, and then quenching to obtain the first ing...
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