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A kind of silicon solar cell and its preparation method

A technology for silicon solar cells and monocrystalline silicon wafers, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency and many defect states, and achieve the effects of improving photoelectric conversion efficiency, reducing defect states, and improving open circuit voltage and filling factor.

Active Publication Date: 2019-08-23
南通北外滩建设工程有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the existing organic-inorganic hybrid solar cells, there are many defect states at the contact interface between the n-type silicon wafer and the PEDOT:PSS layer, which leads to the recombination of electrons and holes, which in turn leads to low photoelectric conversion efficiency.

Method used

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  • A kind of silicon solar cell and its preparation method

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preparation example Construction

[0023] A method for preparing a silicon solar cell proposed in a specific embodiment of the present invention comprises the following steps:

[0024] (1) preparing a silicon nanowire array on the upper surface of an N-type single crystal silicon wafer, and then soaking in an HF solution to remove the natural silicon oxide on the surface of a single silicon nanowire in the silicon nanowire array;

[0025] (2) Preparation of the first interface modification layer: the upper surface of the N-type single crystal silicon wafer obtained in step (1) is spin-coated with the first mixed solution containing hafnium ethoxide and Spiro-OMeTAD, wherein in the first mixed solution The concentration of hafnium ethanol is 0.4-0.8mg / ml, the concentration of Spiro-OMeTAD is 3-5mg / ml, the rotation speed of spin coating is 5500-6000 rpm, and then the first annealing treatment is performed to form the first interface retouching layer;

[0026] (3) Preparation of the second interface modification ...

Embodiment 1

[0035] A method for preparing a silicon solar cell, comprising the steps of:

[0036] (1) preparing a silicon nanowire array on the upper surface of an N-type single crystal silicon wafer, and then soaking in an HF solution to remove the natural silicon oxide on the surface of a single silicon nanowire in the silicon nanowire array;

[0037](2) Preparation of the first interface modification layer: the upper surface of the N-type single crystal silicon wafer obtained in step (1) is spin-coated with the first mixed solution containing hafnium ethoxide and Spiro-OMeTAD, wherein in the first mixed solution The concentration of hafnium ethanol is 0.6 mg / ml, the concentration of Spiro-OMeTAD is 4 mg / ml, the rotational speed of spin coating is 6000 rpm, and then the first annealing treatment is performed to form the first interface modification layer;

[0038] (3) Preparation of the second interface modification layer: the upper surface of the N-type single crystal silicon wafer obt...

Embodiment 2

[0047] A method for preparing a silicon solar cell, comprising the steps of:

[0048] (1) preparing a silicon nanowire array on the upper surface of an N-type single crystal silicon wafer, and then soaking in an HF solution to remove the natural silicon oxide on the surface of a single silicon nanowire in the silicon nanowire array;

[0049] (2) Preparation of the first interface modification layer: the upper surface of the N-type single crystal silicon wafer obtained in step (1) is spin-coated with the first mixed solution containing hafnium ethoxide and Spiro-OMeTAD, wherein in the first mixed solution The concentration of hafnium ethanol is 0.8 mg / ml, the concentration of Spiro-OMeTAD is 3 mg / ml, the rotating speed of spin coating is 5500 rpm, and then the first annealing treatment is performed to form the first interface modification layer;

[0050] (3) Preparation of the second interface modification layer: the upper surface of the N-type single crystal silicon wafer obta...

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Abstract

The invention relates to a silicon solar cell and a preparation method thereof. The method comprises the following steps: preparation of a silicon nanowire array on the upper surface of an N-type monocrystalline silicon piece, preparation of a first interface modification layer, and preparation of a second interface modification layer and first PEDOT (poly(3,4-ethylenedioxythiophene)): preparationof a PSS (poly(sodium-p-styrenesulfonate)) layer and second PEDOT: thermal evaporation of metal copper on the whole surface of the PSS layer, preparation of an obverse gate electrode and preparationof a reverse electrode. By improving the structure and preparation process of a photovoltaic cell with a silicon-based core shell structure, the photoelectric conversion efficiency of the silicon solar cell is effectively improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon solar cell and a preparation method thereof. Background technique [0002] In the preparation process of the existing organic-inorganic hybrid solar cells, the silicon nanowire array is usually prepared on the surface of the n-type silicon wafer by metal-catalyzed chemical etching, and then the n-type silicon wafer is methylated to form Si -CH 3 bond to passivate the silicon surface, and then spin-coat PEDOT:PSS solution on the front side of the n-type silicon wafer and perform annealing treatment to form a PEDOT:PSS layer, then evaporate a silver gate electrode on the front side of the n-type silicon wafer and place it on the n-type silicon wafer The back electrode is vapor-deposited on the back to form a conventional organic-inorganic hybrid solar cell. In the existing organic-inorganic hybrid solar cells, there are many defect states at the contact interface be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18H01L31/1864H01L31/1868Y02E10/50Y02P70/50
Inventor 张军
Owner 南通北外滩建设工程有限公司