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A kind of preparation method of metal oxide transparent conductive film and its product and application

A transparent conductive film and oxide film technology, applied in oxide conductors, non-metallic conductors, metal material coating processes, etc., can solve the problems of film quality pollution, slow deposition rate, etc., achieve high reactivity, increase uniformity , the effect of increasing the processing frequency

Active Publication Date: 2020-06-16
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] CN100590819C discloses a plasma-enhanced atomic layer deposition method and a semiconductor device comprising a film formed therefrom. First, the first treatment material is introduced into the process chamber, and then the second treatment material is introduced into the process chamber, and electromagnetic power coupling is used to generate and promote Plasma of the reduction reaction between the first and second processing materials, after the reduction reaction between the first processing material and the second processing material has been completed to deposit the film on the substrate in solid state, the third material, That is, the reactive gas is introduced into the process chamber to react with pollutants, which solves the problem of slow deposition rate and pollution affecting the quality of the deposited film to a certain extent, but does not achieve low-temperature and high-efficiency preparation of transparent conductive thin films of metal oxides.

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  • A kind of preparation method of metal oxide transparent conductive film and its product and application

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Experimental program
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Effect test

Embodiment 1

[0047] A preparation method of metal oxide transparent conductive film, such as figure 1 As shown, the steps are as follows:

[0048] (1) Feed diethylzinc (DEZ) into the reaction chamber, the feeding time is 0.02s, the extraction time is 35s, cleaning, feeding oxygen for chemical adsorption, the feeding O 2 The molar ratio to DEZ is 3:1, the feeding time is 0.015s, the extraction time is 0s, and then Ar gas is introduced to assist the plasma ignition, the plasma power is 300W, the duration is 16s, and the extraction time is 12s, among which The Ar flow rate of the main pipeline is 35 sccm; in-situ oxidation occurs under the conditions of temperature 60°C and reaction chamber pressure 0.10 torr, cleaning; followed by H 2 , with O 2 The molar ratio is 0.3:1, the plasma starts to glow, and partial reduction occurs under the conditions of temperature 60°C and reaction chamber pressure 0.1torr, extraction for 12s, and cleaning;

[0049] (2) After step (1) is repeated 14 times, a...

Embodiment 2

[0054] A preparation method of a metal oxide transparent conductive film, the steps are as follows:

[0055] (1) Feed diethylzinc (DEZ) into the reaction chamber for 0.02s for 0.02s and 25s for extraction time, clean, feed oxygen for chemical adsorption, and feed O 2 The molar ratio to DEZ is 4:1, the feeding time is 0.015s, the extraction time is 10s, and then Ar gas is introduced to assist the plasma ignition, the plasma power is 300W, the duration is 16s, and the extraction time is 12s, among which The flow rate of Ar in the main pipeline is 35sccm; in-situ oxidation occurs under the conditions of temperature 70°C and reaction chamber pressure 0.10torr, cleaning; followed by the introduction of H 2 , with O 2 The molar ratio is 0.6:1, the plasma starts to glow, and partial reduction occurs at a temperature of 70°C and a reaction chamber pressure of 0.1torr, and it is extracted for 12s and cleaned;

[0056] (2) After step (1) is repeated 18 times, ZnO film is obtained;

...

Embodiment 3

[0061] A preparation method of a metal oxide transparent conductive film, the steps are as follows:

[0062] (1) Feed diethylzinc (DEZ) into the reaction chamber for 0.02s for 0.02s and 30s for extraction time, clean, and then feed oxygen for chemical adsorption. 2 The molar ratio to DEZ is 2:1, the feeding time is 0.03s, the extraction time is 0s, and then Ar gas is introduced to assist the plasma ignition, the plasma power is 300W, the duration is 16s, and the extraction time is 12s, among which The flow rate of Ar in the main pipeline is 35sccm; in-situ oxidation occurs under the conditions of temperature 70°C and reaction chamber pressure 0.10torr, cleaning; followed by the introduction of H 2 , with O 2 The molar ratio is 0.35:1, the plasma starts to glow, and partial reduction occurs under the conditions of temperature 70°C and reaction chamber pressure 0.1torr, extraction for 12s, and cleaning;

[0063] (2) After step (1) is repeated 19 times, a ZnO film is obtained; ...

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Abstract

The invention relates to a preparing method, product and application of a metallic oxide transparent conductive thin film. The preparing method includes the following steps of firstly, introducing a first metal precursor into a reaction cavity for cleaning, introducing O2 for chemical adsorption, introducing inert gas for assisting in building up of plasma luminance, in-situ oxidizing and cleaning, and then introducing reducing gas for building up of plasma luminance, partial reducing and cleaning; secondly, repeatedly executing the first step N1 times to obtain a first metal oxide film; thirdly, introducing a second metal precursor for cleaning, introducing O2 for chemical adsorption, introducing inert gas for assisting in building up of plasma luminance, partial reducing and cleaning, and then introducing reducing gas for building up of plasma luminance, partial reducing and cleaning; fourthly, repeatedly executing the third step N2 times to obtain a second metal oxide film; fifthly,repeatedly executing the first step, the second step, the third step and the fourth step M times, wherein N1:N2=(14-21):(1-4), and M=10-40. The metal oxide conductive film with low specific resistance is prepared at low temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a metal oxide transparent conductive film and its product and use. Background technique [0002] Oxide transparent conductive film is an important optoelectronic information material, which has high transmittance in the visible light region and high reflectivity in the infrared region. The preparation process and post-treatment method of the film have a great influence on the structure, optical properties and electrical properties of the transparent conductive film. In addition, different doping elements have a great influence on the physical and electrical properties of the film. By controlling the doping level of the film, it can Effectively improve the properties of the film, these special photoelectric properties of the oxide transparent conductive film make it widely used in many fields such as solar cells and flat panel displays. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/40H01B5/14H01B1/08
CPCC23C16/40C23C16/4554H01B1/08H01B5/14
Inventor 徐苗李民张伟阮崇鹏陶洪邹建华王磊彭俊彪
Owner SOUTH CHINA UNIV OF TECH