A Monolithic Integration Method of High Electron Mobility Transistor and Vertical Structure Light Emitting Diode
A high electron mobility, light-emitting diode technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effect of reducing volume, improving power density and luminous efficiency, and simplifying design
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Embodiment 1
[0057] (1) Epitaxial growth of 1.8 μm AlN / GaN buffer layer 2, 2.1um n-GaN layer 3, 180nm InGaN / GaN multiple quantum well layer 4, 200nm p-GaN layer 5, 200nm i on silicon substrate 1 by MOCVD -GaN buffer layer and AlGaN back barrier layer 6 (Al composition is 15%), 100nm i-GaN channel layer 7, 20nm AlGaN barrier layer 8 (Al composition is 25%), epitaxial structure such as figure 1 shown;
[0058] (2) On the epitaxial structure of step (1), design the HEMT area and the LED area, and use photolithography technology and electron beam evaporation technology to deposit multi-layer metal Ti(20nm) / Al(120nm) / Ni( 40nm) / Au(50nm), source and drain ohmic contact electrodes formed by annealing at 850°C for 30s under nitrogen atmosphere, the electrode distribution is as follows image 3 shown;
[0059] (3) Perform two photolithography and etching steps on the source and drain electrode wafers prepared in step (2). First, the heterojunction in the LED region is completely etched to expose t...
Embodiment 2
[0070] (1) Epitaxial growth of 1.8 μm AlN / GaN buffer layer 2, 2.1um n-GaN layer 3, 180nm InGaN / GaN multiple quantum well layer 4, 200nm p-GaN layer 5, 200nm i on silicon substrate 1 by MOCVD -GaN buffer layer and AlGaN back barrier layer 6 (Al composition is 15%), 100nm i-GaN channel layer 7, 20nm AlGaN barrier layer 8 (Al composition is 20%), epitaxial structure such as figure 1 shown;
[0071] (2) On the epitaxial structure of step (1), design the HEMT area and the LED area, and use photolithography technology and electron beam evaporation technology to deposit multi-layer metal Ti(20nm) / Al(120nm) / Ni( 40nm) / Au(50nm), source and drain ohmic contact electrodes formed by annealing at 850°C for 30s under nitrogen atmosphere, the electrode distribution is as follows image 3 shown;
[0072] (3) Perform two photolithography and etching steps on the source and drain electrode wafers prepared in step (2). First, the heterojunction in the LED region is completely etched to expose t...
Embodiment 3
[0083] (1) Epitaxial growth of 1.8 μm AlN / GaN buffer layer 2, 2.1um n-GaN layer 3, 180nm InGaN / GaN multiple quantum well layer 4, 200nm p-GaN layer 5, 200nm i on silicon substrate 1 by MOCVD -GaN buffer layer and AlGaN back barrier layer 6 (Al composition is 15%), 100nm i-GaN channel layer 7, 20nm AlGaN barrier layer 8 (Al composition is 20%), epitaxial structure such as figure 1 shown;
[0084] (2) On the epitaxial structure of step (1), design the HEMT area and the LED area, and use photolithography technology and electron beam evaporation technology to deposit multi-layer metal Ti(20nm) / Al(120nm) / Ni( 40nm) / Au(50nm), source and drain ohmic contact electrodes formed by annealing at 850°C for 30s under nitrogen atmosphere, the electrode distribution is as follows image 3 shown;
[0085] (3) Perform two photolithography and etching steps on the source and drain electrode wafers prepared in step (2). First, the heterojunction in the LED region is completely etched to expose t...
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