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A kind of preparation method of surface-enhanced Raman scattering substrate

A surface-enhanced Raman and substrate technology, applied in Raman scattering, sputtering coating, instrumentation, etc., can solve the problems of insufficient sensitivity and measurement speed

Active Publication Date: 2020-07-07
HANGZHOU DIANZI UNIVERSTIY INFORMATION ENG SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, SERS technology can be used in trace substance analysis, flow cytometry and other applications, which are not enough for the sensitivity and measurement speed of traditional Raman spectroscopy detection methods

Method used

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  • A kind of preparation method of surface-enhanced Raman scattering substrate
  • A kind of preparation method of surface-enhanced Raman scattering substrate
  • A kind of preparation method of surface-enhanced Raman scattering substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0035] The present invention prepares Cu on Si substrate by magnetron sputtering 3 N thin film, using SEM to expose the sample to an electron beam, finally forming a nanoporous copper structure, thereby completing the preparation of the SERS substrate. Firstly, the substrate used for depositing samples was ultrasonically cleaned with detergent, acetone, absolute alcohol and deionized water for 15 minutes, and then the substrate was placed on the sample holder of the magnetron sputtering equipment, and the sample holder was parallel to the target surface And the distance is 55mm, when the background pressure in the vacuum chamber is lower than 6×10 －6 At mbar, feed a mixed gas with a flow rate of 40 sccm into the vacuum chamber, and the flow ratio of the mixed gas nitrogen and argon is 20:1; turn on the radio frequency source, preheat for 5 minutes, turn on the radio frequency, and increase the radio frequency power to pre-sputtering Power, the pre-sputtering power is 50W unti...

Embodiment 2

[0037] The present invention prepares Cu on Si substrate by magnetron sputtering 3 N thin film, using SEM to expose the sample to an electron beam, finally forming a nanoporous copper structure, thereby completing the preparation of the SERS substrate. Firstly, the substrate used for depositing samples was ultrasonically cleaned with detergent, acetone, absolute alcohol and deionized water for 15 minutes, and then the substrate was placed on the sample holder of the magnetron sputtering equipment, and the sample holder was parallel to the target surface And the distance is 55mm, when the background pressure in the vacuum chamber is lower than 6×10 －6 At mbar, feed a mixed gas with a flow rate of 30 sccm into the vacuum chamber, and the flow ratio of the mixed gas nitrogen and argon is 10:1; turn on the radio frequency source, preheat for 10 minutes, turn on the radio frequency, and increase the radio frequency power to pre-sputtering Power, the pre-sputtering power is 150W un...

Embodiment 3

[0039]The present invention prepares Cu on Si substrate by magnetron sputtering 3 N thin film, using SEM to expose the sample to an electron beam, finally forming a nanoporous copper structure, thereby completing the preparation of the SERS substrate. Firstly, the substrate used for depositing samples was ultrasonically cleaned with detergent, acetone, absolute alcohol and deionized water for 15 minutes, and then the substrate was placed on the sample holder of the magnetron sputtering equipment, and the sample holder was parallel to the target surface And the distance is 55mm, when the background pressure in the vacuum chamber is lower than 6×10 －6 At mbar, feed a mixed gas with a flow rate of 40 sccm into the vacuum chamber, and the flow ratio of the mixed gas nitrogen and argon is 5:1; turn on the radio frequency source, preheat for 8 minutes, turn on the radio frequency, and increase the radio frequency power to pre-sputtering Power, the pre-sputtering power is 100W until...

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Abstract

The invention discloses a preparation method of a surface reinforced Raman scattering substrate. The preparation method comprises the following steps: firstly, an Si substrate for depositing samples is cleaned; then, the substrate is placed on a sample rack; and the sample rack is parallel to the surface of a target, and is spaced by 55 mm. When the bottom air pressure in a vacuum cavity is lowerthan 6*10-6 mbar, mixed gas with a flowing speed of 40 sccm is introduced, so that a copper target is sputtered; after film plating through sputtering, Cu3N film samples are taken out to put in a SEMsample chamber for vacuumizing; an electronic beam exposure mode is selected; the electronic beam focusing is adjusted, so that electronic beam spots are controlled about 1 micron; and areas of the Cu3N films are selected for electronic beam exposure. Finally, a SEM scanning mode is used for SEM imaging of the exposure areas; and morphologies after exposure are observed. The prepared substrate achieves a surface reinforced Raman scattering effect, is provided with a nanoscale rough surface, and provides a new possibility for hot spot generation.

Description

technical field [0001] The invention belongs to the field of substrate preparation, in particular to a method for preparing a surface-enhanced Raman scattering (SERS) substrate. Background technique [0002] When molecules with Raman activity are adsorbed on rough metal surfaces, especially on noble metal surfaces with nanoscale roughness, the Raman scattering signal intensity is greatly enhanced, which is called surface-enhanced Raman scattering effect (SERS effect). [0003] SERS technology overcomes the disadvantage of weak signal inherent in traditional Raman spectroscopy, and can increase the intensity of Raman signal by several orders of magnitude, and its enhancement factor can be as high as 10 14 ~10 16 , enough to detect the Raman signal of a single molecule. Therefore, SERS technology can be used in trace substance analysis, flow cytometry and other applications, which are not enough for the sensitivity and measurement speed of traditional Raman spectroscopy dete...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58G01N21/65
CPCC23C14/0036C23C14/0641C23C14/35C23C14/582G01N21/658
Inventor 杜允俞优姝
Owner HANGZHOU DIANZI UNIVERSTIY INFORMATION ENG SCHOOL