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A kind of transfer method of boron nitride thin film

A transfer method and boron nitride technology, applied in the field of materials, can solve the problems of PMMA residue, limiting further application of hexagonal boron nitride film, and long transfer time.

Active Publication Date: 2019-09-20
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] This method can obtain large-area hexagonal boron nitride films, but the transfer time is long and PMMA remains, which limits the further application of hexagonal boron nitride films in devices

Method used

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  • A kind of transfer method of boron nitride thin film
  • A kind of transfer method of boron nitride thin film
  • A kind of transfer method of boron nitride thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Step 1, grow h-BN on the surface of copper foil to form h-BN / Cu structure:

[0043] The hexagonal boron nitride preparation equipment is a tube furnace with three temperature zones. Put the borane ammonia into the quartz inner tube of the first temperature zone, and turn the copper foil into the quartz outer tube of the third temperature zone. The three temperature zones of the tube furnace are heated separately, the temperature of the first temperature zone reaches 80°C, the second temperature zone reaches 400°C, and the third temperature zone reaches 1050°C. When the three temperature zones reach the specified temperature, the quartz outer tube is fed with a mixed gas of hydrogen and argon, and the flow rate of hydrogen gas is 8 sccm and the flow rate of argon gas is 20 sccm.

[0044] Step 2: Apply PMMA grid on the edge of h-BN / Cu sample to form PMMA flexible grid / h-BN / Cu structure, such as figure 1 Shown:

[0045] Cut the h-BN / Cu sample into the desired shape. A...

Embodiment 2

[0055] Step 1, grow h-BN on the surface of copper foil to form h-BN / Cu structure:

[0056] The hexagonal boron nitride preparation equipment is a tube furnace with three temperature zones. Put the borane ammonia into the quartz inner tube of the first temperature zone, and turn the copper foil into the quartz outer tube of the third temperature zone. The three temperature zones of the tube furnace are heated separately, the temperature of the first temperature zone reaches 80°C, the second temperature zone reaches 400°C, and the third temperature zone reaches 1050°C. When the three temperature zones reach the specified temperature, the quartz outer tube is fed with a mixed gas of hydrogen and argon, and the flow rate of hydrogen gas is 8 sccm and the flow rate of argon gas is 20 sccm.

[0057] Step 2: Apply PMMA flexible sash to the edge and middle of the h-BN / Cu sample to form a PMMA flexible sash / h-BN / Cu structure, such as Image 6 Shown:

[0058] Cut the h-BN / Cu sample i...

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PUM

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Abstract

The invention discloses a transferring method of a boron nitride film. The method is characterized in that a high-molecular polymer is used as an assistant flexible outer frame; a single-layer hexagonal boron nitride obtained by low-pressure chemical vapor deposition is quickly transferred to a target substrate, and thus the problem of residues of the high-molecular polymer can be solved; a shape-controllable hexagonal boron nitride (h-BN) film sample can be quickly obtained; and a hexagonal boron nitride film sample with accurate layer number can be obtained by transferring in a plurality oftimes.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a method for transferring a multilayer hexagonal boron nitride film. Background technique [0002] The hexagonal boron nitride (h-BN) film is a layered film with a graphene-like structure, in which the hexagonal boron nitride layer is connected by alternating covalent bonds between boron atoms and nitrogen atoms to form a hexagonal structure, and the interlayer is composed of van der Waals Earsley Connect. The bandgap width of hexagonal boron nitride is 6.07eV, it has the properties of high temperature resistance, good chemical stability, high resistance, high thermal conductivity and high mechanical strength, and can be used for protective coatings, dielectric layers of nano-devices and optoelectronic devices and other fields. At present, there are many methods for preparing nano boron nitride, among which mechanical methods such as conventional tape stripping me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/56C23C16/34C23C16/01
Inventor 李静莫炳杰尹君
Owner XIAMEN UNIV