Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A semiconductor chip production process

A production process and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, photo-plate-making process of patterned surface, photo-plate-making process exposure device, etc. Large vibration reduction pressure, improved processing quality, and improved service life

Active Publication Date: 2021-03-23
JIANGSU ETERN
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the elimination of the vibration of the silicon wafer table in this scheme does not give an exact solution; and the damping effect of the shock absorber between the main frame and the base frame cannot reach the expected effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A semiconductor chip production process
  • A semiconductor chip production process
  • A semiconductor chip production process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0041] As an embodiment of the present invention, a No. 1 spherical cavity 542 is set in the No. 1 blowing hole 541 and No. 2 blowing hole 551; a No. 1 circular arc is set on the side of the No. 1 spherical cavity 542 close to the central turntable 52 Shape chute 543; Rotation block 56 is installed in the No. 1 spherical cavity 542; No. 4 blowing holes 561 are set inside the rotation block 56, and sliding boss 562 is set on the side of rotation block 56 near the center turntable 52; The sliding boss 562 slides in the No. 1 arc-shaped chute 543; the No. 4 air blowing hole 561 is embedded in a circular spherical magnet 563 near the outlet of one end of the balance weight 53; the upper and lower surfaces of the balance weight 53 are embedded with magnets 531 . The higher the motor speed, the greater the centrifugal force on the balance weight 53, the farther the balance weight 53 from the center of rotation, the farther the distance, the more openings on the upper and lower air f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor chip production process. The process comprises the following steps that a waferis placed on a grinding machine to be grinded into a mirror surface; the wafer is sent into a high-temperature diffusion furnace to be subjected to oxidation treatment; the wafer is sent to a glue mixing device to be coated with photoresist; the wafer is sent into a rotary photoetching machine to be subjected to exposure and developing; and the wafer is sent into an etching machine to be subjected to plasma etching; and the wafer is sent into a high-temperature furnace for doping. By virtue of the process, a dynamic balance device is arranged in a rotary hollow cavity, so that vibration generated in the rotating process of a rotating table is reduced; a damping device is arranged between a main frame and a foundation frame, so that vibration generated by the main frame is reduced; annularspherical magnets are embedded into the outlet of a number four air blowing hole, so that the air blowing hole is opened under the action of magnetic force, the size of the air blowing hole area is dynamically adjusted, and the use amount of compressed air is saved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a semiconductor chip production process. Background technique [0002] Wafer refers to the silicon chip used in the production of silicon semiconductor integrated circuits. Wafer is the carrier used in the production of integrated circuits. In general, wafers refer to single crystal silicon wafers. Wafers are the most commonly used semiconductor materials. In the production process of integrated circuit chips, the exposure and transfer of chip design patterns on the photoresist on the surface of silicon wafers is one of the most important processes. The equipment used in this process is called a photolithography machine. Lithography machine is the most critical equipment in the process of integrated circuit processing. Foreign countries have proposed the concept of next-generation lithography many years ago, and have conducted a lot of research on technologie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/67G03F7/20
CPCG03F7/70716G03F7/70766H01L21/0274H01L21/67253
Inventor 侯玉闯薛鹏
Owner JIANGSU ETERN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products