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A kind of preparation method of aluminum-silicon alloy for electronic packaging

An aluminum-silicon alloy and electronic packaging technology, which is applied in the field of preparation of aluminum-silicon alloys for electronic packaging, can solve the problems of high equipment requirements and costs, increase product production costs, time-consuming and other problems, achieve excellent mechanical properties, and improve rolling efficiency. , reducing the effect of anisotropy

Active Publication Date: 2020-04-21
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] What is obtained by spray deposition combined with hot isostatic pressing is generally a large cylindrical block material, and the equipment requirements and cost of hot isostatic pressing are high; while the electronic packaging cover plate material is usually a plate with a thickness of 1 to 2 mm
In this way, the spray-deposited ingot not only needs to be densified by hot isostatic pressing, but also needs to go through processes such as wire cutting, machining, and leveling, which not only increases the process but also consumes a lot of time, greatly increasing the production cost of the product

Method used

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  • A kind of preparation method of aluminum-silicon alloy for electronic packaging
  • A kind of preparation method of aluminum-silicon alloy for electronic packaging
  • A kind of preparation method of aluminum-silicon alloy for electronic packaging

Examples

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Embodiment 1

[0037] Example 1 Al-22% Si electronic packaging aluminum-silicon alloy and preparation method thereof

[0038] The preparation method of the aluminum-silicon alloy for electronic packaging of the present embodiment is carried out according to the following steps:

[0039] (1) The raw materials are monocrystalline silicon and pure aluminum (99.95% Al), and the alloy components are compounded according to weight percentage, and the compounding components are: Si: 22%, Al: 78%;

[0040] (2) In an intermediate frequency induction furnace, heat up to 780-860°C to melt Al, and then rapidly heat up to 1200-1300°C after complete melting, add Si with a good weight, and use graphite rods to stir fully for 5-10 minutes, then add 30% NaCl +47% KCl+23% cryolite is placed in a graphite cover, extended into the bottom of the melt for slagging, degassed with hexachlorohexane, cooled to 850-950°C and kept for 10-15 minutes;

[0041] (3) The tundish crucible is heated to 700-800°C by resist...

Embodiment 2

[0047] Example 2 Al-27% Si electronic packaging aluminum-silicon alloy and preparation method thereof

[0048] The preparation method of the aluminum-silicon alloy for electronic packaging of the present embodiment is carried out according to the following steps:

[0049] (1) The raw materials are monocrystalline silicon and pure aluminum (99.95% Al), and the alloy components are compounded according to weight percentage, and the compounding components are: Si: 27%, Al: 73%;

[0050] (2) In an intermediate frequency induction furnace, heat up to 780-860°C to melt Al, and then rapidly heat up to 1250-1350°C after complete melting, add Si with a good weight, use graphite rods to fully stir for 5-10 minutes, and mix 30% NaCl +47% KCl+23% cryolite is placed in a graphite cover, extended into the bottom of the melt for slagging, degassed with hexachlorohexane, cooled to 950-1050°C and kept for 10-15 minutes;

[0051] (3) The tundish crucible is heated to 800-900°C by resistance...

Embodiment 3

[0057] Example 3 Al-34% Si electronic packaging aluminum-silicon alloy and preparation method thereof

[0058] The preparation method of the aluminum-silicon alloy for electronic packaging of the present embodiment is carried out according to the following steps:

[0059] (1) The raw materials are monocrystalline silicon and pure aluminum (99.95% Al), and the alloy components are compounded according to weight percentage, and the compounding components are: Si: 34%, Al: 66%;

[0060] (2) In an intermediate frequency induction furnace, heat up to 780-860°C to melt Al, and then rapidly heat up to 1250-1350°C after complete melting, add Si with a good weight, use graphite rods to fully stir for 5-10 minutes, and mix 30% NaCl +47% KCl+23% cryolite is placed in a graphite cover, extended into the bottom of the melt for slagging, degassed with hexachlorohexane, cooled to 950-1050°C and kept for 10-15 minutes;

[0061] (3) The tundish crucible is heated to 800-900°C by resistance...

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Abstract

The invention discloses a preparation method of an aluminum-silicon alloy for electronic packaging. The preparation method comprises the following steps of S1, jetting and deposition for blank making;S2, homogenizing treatment; S3, densifying treatment; S4, isothermal rolling; and S5, annealing treatment. According to the preparation method, the aluminum-silicon alloy of the final thickness or approaching the final thickness is directly made by combining quick solidification with a traditional plastic deformation means, so that mechanical machining procedures such as line cutting, saw cuttingand milling are omitted, the material utilization rate and the production efficiency are greatly improved, and the preparation method is suitable for industrial production; and the aluminum-silicon alloy obtained with adoption of the method has excellent mechanical machining, surface plating and welding properties, meets the using requirements of electronic packaging and is suitable for electronic packaging cover plate materials.

Description

technical field [0001] The invention relates to the field of molding and processing of electronic packaging materials, in particular to a method for preparing an aluminum-silicon alloy for electronic packaging. Background technique [0002] Aluminum silicon alloy for electronic packaging is composed of aluminum matrix and silicon phase, also known as Al / Sip composite material. Aluminum-silicon alloy for electronic packaging combines the good properties of aluminum matrix and silicon phase, with high thermal conductivity, controllable thermal expansion coefficient, high specific strength, and low density (<2.7g / cm 3 ), easy processing and plating, etc., and the content of silicon (27.7%) and aluminum (8.1%) in the earth's crust is very rich, the cost is low, the material is non-polluting to the environment, harmless to the human body, and is convenient for recycling. Therefore, aluminum-silicon alloys can meet the requirements of modern electronic packaging on material me...

Claims

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Application Information

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IPC IPC(8): C22F1/043C22C21/02C22C1/02B22F3/115B22F3/24
CPCB22F3/115B22F3/24B22F2003/248C22C1/026C22C21/02C22F1/043
Inventor 蔡志勇王日初彭超群冯艳
Owner CENT SOUTH UNIV
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