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A method for preparing graphene dendrites on an insulating substrate

A technology on an insulating substrate and an insulating substrate is applied in the field of microelectronic materials, which can solve problems such as pollution and damage, and achieve the effects of good repeatability, low cost of raw materials, and good deposition effect.

Active Publication Date: 2020-04-03
DEZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The substrate used by this method is a metal substrate. In practical applications, it is necessary to use chemical reagents to etch the substrate and use organic substances to assist transfer to the insulating substrate. This method causes damage and contamination of the sample to a certain extent.

Method used

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  • A method for preparing graphene dendrites on an insulating substrate
  • A method for preparing graphene dendrites on an insulating substrate
  • A method for preparing graphene dendrites on an insulating substrate

Examples

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Embodiment 1

[0051] A method for preparing graphene dendrites on an insulating substrate, using SiO 2 / Si substrate as an example, including the following steps:

[0052] (1) SiO with a thickness of 500 μm 2 / Si substrate was ultrasonically cleaned and dried.

[0053] (2) Put the silicon substrate dried in (1) into the outer wall of the quartz inner tube in the CVD tube furnace, and the tube furnace is evacuated, and the vacuum pressure is 10 -5 mbar, raise the temperature to 300°C, the heating rate is 10°C / min, turn off the molecular pump; raise the temperature to 800°C, keep the temperature for 30 minutes, pass in hydrogen for hydrogen etching, the hydrogen flow rate is 15 sccm; slowly raise the temperature to 1050°C, the heating rate is 5°C / min, feed methane, the flow rate of methane is 30sccm, constant temperature 60min. Graphene dendrites can be obtained during the continuous decomposition and deposition of methane.

[0054] (3) After the growth is over, slide the tube furnace bo...

Embodiment 2

[0057] A method for preparing graphene dendrites on an insulating substrate, using SiO 2 / Si substrate as an example, including the following steps:

[0058] (1) SiO with a thickness of 500 μm 2 / Si substrate was ultrasonically cleaned and dried.

[0059] (2) Put the silicon substrate dried in (1) into the outer wall of the quartz inner tube in the CVD tube furnace, and the tube furnace is evacuated, and the vacuum pressure is 10 -5 mbar, raise the temperature to 300°C, the heating rate is 10°C / min, turn off the molecular pump; raise the temperature to 800°C, keep the temperature for 30 minutes, pass in hydrogen for hydrogen etching, the hydrogen flow rate is 25 sccm; slowly raise the temperature to 1050°C, the heating rate is 5°C / min, feed methane, the flow rate of methane is 15sccm, constant temperature 30min. Graphene dendrites can be obtained during the continuous decomposition and deposition of methane.

[0060] After the growth, slide the tube furnace box to cool do...

Embodiment 3

[0063] A method for preparing graphene dendrites on an insulating substrate, using SiO 2 / Si substrate as an example, including the following steps:

[0064] (1) SiO with a thickness of 500 μm 2 / Si substrate was ultrasonically cleaned and dried.

[0065] (2) Put the silicon substrate dried in (1) into the outer wall of the quartz inner tube in the CVD tube furnace, and the tube furnace is evacuated, and the vacuum pressure is 10 -5 mbar, raise the temperature to 300°C, the heating rate is 10°C / min, turn off the molecular pump; raise the temperature to 800°C, keep the temperature for 30 minutes, pass in hydrogen for hydrogen etching, the hydrogen flow rate is 15 sccm; slowly raise the temperature to 1050°C, the heating rate is 5°C / min, feed methane, the flow rate of methane is 25sccm, constant temperature 120min. Graphene dendrites can be obtained during the continuous decomposition and deposition of methane.

[0066] (3) After the growth is over, slide the tube furnace b...

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Abstract

The invention relates to a method for preparing graphene dendritic crystals on an insulating substrate, and belongs to the technical field of microelectronic materials. The method comprises the following steps: cleaning an insulating substrate, and carrying out drying by blowing; placing the substrate into the outer wall of a quartz inner tube in a CVD tube furnace, vacuumizing the tubular furnace, carrying out heating to 200-300 DEG C, introducing hydrogen, and carrying out etching on the surface of the substrate when the temperature is raised to 800-900 DEG C; slowly carrying out heating to1050-1080 DEG C after the etching by hydrogen, keeping the temperature constant, introducing a carbon source and hydrogen, and carrying out graphene growth; stopping introducing gas after the growth is ended, carrying out cooling to 700-800 DEG C first, and then carrying out natural cooling to room temperature. The morphology of the graphene dendritic crystals is of a dendritic shape, and the graphene dendritic crystals are distributed at the top ends of branches. Through the control of the introduction amount of methane, the ratio of the methane to the hydrogen, and the like in the preparation method, the purpose that the graphene grows on the insulating substrate and form a dendritic crystal shape is realized. The dendritic crystal-like graphene has a better mechanical property and electrical property compared with reticulate graphene.

Description

technical field [0001] The invention belongs to the technical field of microelectronic materials, and in particular relates to a method for preparing graphene dendrites on an insulating substrate. Background technique [0002] Graphene is a honeycomb crystal structure formed by carbon atoms closely arranged in sp2 hybridization, and is a two-dimensional material with only a single atomic layer thickness. In 2004, it was made by two British scientists, Geim and Novoselov, through mechanical exfoliation of highly oriented pyrolytic graphite (HOPG). Graphene is also the basic unit of other materials. It can be wrapped into zero-dimensional fullerene, rolled into one-dimensional carbon nanotubes and stacked into three-dimensional graphite. The unique structure of graphene determines its unique properties. An ideal graphene material has an electron mobility of 200,000 cm at room temperature 2 / (V s); high specific surface area; thermal conductivity at room temperature is 5000W...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 许士才李迎仙张晶孙丽于法鹏王吉华赵显
Owner DEZHOU UNIV
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