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Chemical mechanical polishing solution for sapphires and preparation method of chemical mechanical polishing solution

A technology of organic acid and inorganic acid, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of low processing efficiency, short service life, slow polishing rate, etc., and achieve high polishing rate, improved surface quality and low cost Effect

Active Publication Date: 2018-12-07
江苏易洁工业介质有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It overcomes the problems of slow polishing rate, low processing efficiency and short service life in the existing sapphire wafer processing process

Method used

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  • Chemical mechanical polishing solution for sapphires and preparation method of chemical mechanical polishing solution
  • Chemical mechanical polishing solution for sapphires and preparation method of chemical mechanical polishing solution
  • Chemical mechanical polishing solution for sapphires and preparation method of chemical mechanical polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 5kg mass fraction is 5% 80nm silica sol and 1kg mass fraction is 25% 25nm silica sol is poured in the reactor and stirs and mixes evenly, heats up to 50 ℃; The acid mass ratio is 1:1) to adjust the pH of the mixed silica sol in the reactor to 6.5, heat preservation and stirring for aging for 1 hour; use sodium hydroxide and monoethanolamine compound alkali (sodium hydroxide and monoethanolamine mass ratio is 1:1) The pH of the sol was 9.5, and then aged with heat preservation and stirring for 1 hour, and then cooled to room temperature; then, the sapphire chemical mechanical polishing solution of Example 1 was obtained by circulating and filtering for 1 hour with a filter element with an average pore diameter of 1 micron.

Embodiment 2

[0029] 5kg mass fraction is 20% 120nm silica sol and 1kg mass fraction is 20% 15nm silica sol pours in the reaction kettle and stirs and mixes evenly, heats up to 90 ℃; Ratio of 1:1) to adjust the pH of the mixed silica sol in the reactor to 7.5, heat preservation and stirring and aging for 1 hour; The pH of the sol was 10.5, and then aged with heat preservation and stirring for 1 hour, and then cooled to room temperature; the sapphire chemical mechanical polishing solution of Example 2 was obtained by circulating and filtering for 1 hour with a filter element with an average pore size of 1 micron.

Embodiment 3

[0031] 5kg mass fraction is that 40% 140nm silica sol and 15kg mass fraction are 5% 5nm silica sol are poured in the reaction kettle and stir and mix evenly, heat up to 110 ℃; 1:1) adjust the pH of the mixed silica sol in the reaction kettle to 8, keep warm and stir for aging for 1 hour; use ammonia water and tetramethylethylenediamine compound alkali (the mass ratio of ammonia water and tetramethylethylenediamine is 1:1) The pH of the sol was 11.5, and then aged with heat preservation and stirring for 1 hour, and then cooled down to room temperature; the sapphire chemical mechanical polishing solution of Example 3 was obtained by circulating and filtering for 1 hour with a filter element with an average pore diameter of 1 micron.

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Abstract

The invention provides a chemical mechanical polishing solution for sapphires and a preparation method of the chemical mechanical polishing solution. The preparation method comprises the following steps: tightly agglomerating small-particle-size silica on the surface of large-particle-size silica by virtue of composite acid and compound alkali, and forming the silica sol sapphire polishing solution with a special composite structure. The polishing solution has a high polishing rate, and the polished sapphire has an ultra-smooth surface and does not have any scratch or etch pit or orange skin,the roughness can reach a sub-nanometer order, and the polishing solution has excellent service lifecycle. Moreover, the processing efficiency and quality of sapphire wafers can be obviously improved,and the production cost is reduced.

Description

technical field [0001] The invention belongs to the field of sapphire material processing, in particular to a sapphire chemical mechanical polishing liquid and a preparation method thereof. Background technique [0002] Sapphire is a multifunctional oxide crystal with excellent physical and chemical properties. Single crystal sapphire has good thermal properties, wear resistance, electrical properties and dielectric properties. Its hardness is second only to diamond, reaching Mohs 9, and it still has good stability at high temperatures. Fast, national defense and other fields have a wide range of applications. [0003] Chemical Mechanical Polishing (CMP) is currently the only practical and core technology that can achieve global planarization of sapphire wafers. However, problems such as low chemical mechanical polishing processing efficiency, large damage layer, and poor process stability of single crystal sapphire are the main problems restricting the industrial processi...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 涂洛林方
Owner 江苏易洁工业介质有限公司
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