Amorphous znmgsno thin film and thin film transistor and preparation method thereof
A thin-film transistor and thin-film technology, applied in the field of amorphous oxide semiconductor thin films, can solve problems such as the inability to achieve a bidirectional control effect that can be increased or decreased, and reduce the carrier concentration, thereby reducing material costs, low production costs, and raw materials. easy-to-get effect
Active Publication Date: 2020-09-15
ZHEJIANG UNIV
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Problems solved by technology
Therefore, the addition of M element acts as a carrier inhibitor, that is, to reduce the carrier concentration, which is unidirectional, and cannot achieve a two-way control effect that can be increased or decreased.
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[0035] (1) Equipped with a single precursor solution
[0036] Prepare individual Zn, Sn, and Mg precursor solutions at a concentration of 0.20 mol / L.
[0037] Zn precursor solution, weighing out 0.1785 g of Zn(NO 3 ) 2 ·6H 2 O, dissolve it in 3 mL of 2-methoxyethanol solvent, and add 120 μL acetylacetone and 69 μL ammonia water;
[0038] Mg precursor solution, weighing out 0.1026 g of Al (NO 3 ) 3 9H 2 O, dissolve it in 2 mL of 2-methoxyethanol solvent, and add 80 μL acetylacetone and 46 μL ammonia water;
[0039] Sn precursor solution, weigh out 0.2369 g of SnCl 2 2H 2 O and 0.0840 g of ammonium nitrate were dissolved in 5.25 ml of 2-methoxyethanol solvent, and 210 μL of acetylacetone and 60 μL of ammonia were added;
[0040] The above-mentioned precursor solutions of Zn, Mg, and Sn were respectively put into magnets and sealed, and magnetically stirred at room temperature for 12 h, and then the obtained single precursor solutions were statically aged for 12 h.
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Abstract
The invention discloses an amorphous ZnMgSnO thin film and a thin film transistor and a preparation method thereof. In the amorphous ZnMgSnO thin film, the atomic ratio of Zn: Mg: Sn is 9: x: 4, wherein x=0. 2-0.8, the thin film is amorphous structure, and the band gap at room temperature is 4.13-4.96 eV. The invention also provides a preparation method of an amorphous ZnMgSnO thin film and a thinfilm transistor, wherein, the preparation method adopts a solution combustion method to prepare the amorphous ZnMgSnO thin film transistor, and the prepared amorphous ZnMgSnO thin film transistor hasobvious field effect characteristics, and the switching state current ratio is in the order of 105. The amorphous ZnMgSnO thin film and the transistor provided by the invention are prepared by a solution method, do not contain precious and rare In metal, have the advantages of simple process, low cost and the like, and can be applied in novel display technology and printing electronics.
Description
technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to an amorphous ZnMgSnO thin film, a thin film transistor and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. Regardless of the active matrix liquid crystal display (AMLCD), which is absolutely dominant in the current advanced display market, or the AMOLED (active matrix organic light-emitting diode display), which represents the future trend of flexible display, TFT devices occupy a large part of the pixel drive unit. key position. In addition, TFT devices have been widely researched and applied in biosensing, ultraviolet search and other fields. Therefore, it is of great significance to research and develop TFT devices. The most important component of TFT is its channel layer material, and the research on TFT also focuses on the re...
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IPC IPC(8): H01L29/24H01L21/02H01L29/786H01L21/34
CPCH01L21/02565H01L21/02628H01L29/247H01L29/66969H01L29/78693
Inventor 吕建国程晓涵冯丽莎叶志镇
Owner ZHEJIANG UNIV