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Metal v-grating fano resonance structure with adjustable tip spacing

A resonant structure and adjustable technology, applied in optics, optical components, material analysis through optical means, etc., can solve problems such as difficulty in ensuring target molecules, missing signals, and decreased sensitivity

Active Publication Date: 2020-10-27
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, because the field enhancement of the structure pair is a point enhancement, the range is limited, it is difficult to ensure that the target molecule exists within the field enhancement range, and there is a phenomenon of decreased sensitivity or even missing signals.

Method used

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  • Metal v-grating fano resonance structure with adjustable tip spacing
  • Metal v-grating fano resonance structure with adjustable tip spacing
  • Metal v-grating fano resonance structure with adjustable tip spacing

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings.

[0019] Such as figure 1 , the metal plasmon Fano resonance structure with adjustable tip spacing of the present invention is sequentially formed on the metal film on the substrate, the optically transparent elastic medium substrate, the metal film is a gold film or silver film, and the optically transparent medium film The material is Nolan glue or epoxy resin. Preferably, the height of the metal film is 220 nm, the thickness is 80 nm, and the period of the grating is 745 nm, so that the grating excites the surface plasmon resonance wave at a wavelength of 800 nm. In addition, the slit pitch of the unit structure is 10 nm.

[0020] Correspondingly, as Figure 4 , the method for preparing the metal plasmon resonance structure includes the following steps:

[0021] (S1) A 35-nm-thick layer of SiO was deposited using chemical vapor deposition (PECVD) on the top silic...

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Abstract

The invention relates to a metal V-shaped grating Fano resonance structure with an adjustable tip spacing. The resonance structure comprises a layer of transparent elastic substrate and a metal V-shaped grating. The nanoscale spacing of structure tips is realized by bending the elastic substrate, so that local field enhancement factors near the tips are greatly enhanced. The adjustable characteristic of the tip spacing ensures the reliability of the tip spacing in a preparation process, so that high sensitivity and high accuracy of detection are effectively guaranteed. A main local area of a resonance light field of the structure is located at the tips of slits, and a field enhancement range is also extended to a line from a point of a traditional nano-particle pair. A preparation method of the resonance structure is based on anisotropic etching of silicon and a stripping technology of a metal film; the process is simple and convenient; the reliability is high; the repeatability is good; and the application is convenient.

Description

technical field [0001] The invention relates to a metal plasmon resonance structure and a preparation method thereof, in particular to a metal V-shaped grating Fano resonance structure with adjustable tip spacing. Background technique [0002] Because Raman scattering has fingerprint characteristics, the Raman scattering technology without marking can be directly applied to high-precision sensors. However, if the spontaneous Raman scattering is directly applied to the sensor, there are problems such as small detection range, high laser power required, and insufficient sensitivity, which greatly limit its application range. The surface plasmon resonance structure developed in recent years can achieve local field enhancement of several orders of magnitude. Surface plasmon resonance refers to the collective oscillation of electrons excited by light irradiation on nano-metal structures. Such electronic oscillations are different from electronic oscillations excited by metal pla...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/65G01N21/01G02B5/00
CPCG01N21/01G01N21/658G02B5/008
Inventor 吕昌贵祁正青史士鹏钟嫄崔一平
Owner SOUTHEAST UNIV
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