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2 results about "Local field enhancement" patented technology

A hydrogen sensing probe and its preparation method

ActiveCN121877746BImprove contact efficiencyImprovementPhase-affecting property measurementsLocal field enhancementNanowire array
This invention discloses a hydrogen sensing probe and its fabrication method. The nanowire array of this invention provides a high specific surface area and a three-dimensional channel structure, improving the contact efficiency between the sensitive layer and hydrogen, providing a pathway for light / gas transmission, and balancing sensitivity and response / recovery kinetics. At the same time, it abandons the traditional external cavity mirror structure. The Fabry-Perot interferometer cavity formed by the second and first reflective layers enhances the round-trip interaction between light and the sensitive layer, improves the spectral drift amplitude and signal-to-noise ratio, and reduces the influence of environmental factors. Furthermore, the nanowire array is coupled with the emitted light field and / or reflected light field at the end face to form a local field enhancement effect, which is superimposed with the Fabry-Perot interferometer effect, resulting in a larger spectral shift caused by the same amount of hydrogen.
Owner:NANJING UNIV OF INFORMATION SCI & TECH

Low threshold plasmonic graphene all-optical nonlinear activator and preparation method

ActiveCN121142861BLocal field enhancementGold film
The application relates to a low-threshold plasmonic graphene all-optical nonlinear activator, which comprises a substrate, a gold film is covered on the substrate, a device pattern is etched on the gold film, and a graphene film is covered on the gold film. The gold film pattern of the plasmonic structure can generate a very strong local field enhancement effect, significantly enhancing the interaction between light and graphene; by utilizing the Pauli blocking effect and the ultrafast carrier dynamics of graphene, combining the local field enhancement effect of the plasmonic structure to strengthen the light-matter interaction, low-threshold nonlinear activation is realized. The device activation threshold is as low as 7.03 nW, and the accuracy in MNIST handwritten digit recognition is 96.7%; by eliminating the photoelectric conversion link, a low-power-consumption, high-energy-efficiency optical domain processing scheme is provided, and the practicability of optical neural network calculation is significantly improved.
Owner:HUNAN UNIV