The invention provides a method for forming elastic strain through
laser shock to enhance the electrical property of a two-dimensional material, and belongs to the technical field of
laser nanoscale
processing of
semiconductor transistors. The method comprises the following steps: firstly, transferring
metal nanoparticles prepared in advance to a substrate containing a two-dimensional material, and further preparing a
polymer film layer on the
metal nanoparticles; stripping the obtained sample from the substrate, turning over the sample, and transferring the sample to a target substrate; and finally, pulse
laser shock is used for treatment, so that the
metal nanoparticles protrude relative to the upper surface of the
polymer film, and the two-dimensional material obtains stable elastic strain. According to the method, the two-dimensional material can obtain stable elastic strain in the photoelectric
transistor including but not limited to flexibility, the
local field of the LSPR of the
metal nanoparticles enhances the two-dimensional material cooperating with the elastic strain, so that the light absorption range of the prepared photoelectric
transistor is enlarged, and the electrical property is remarkably improved; therefore, the flexible electronic device with high photoresponsiveness and outstanding electrical properties is manufactured.