Novel electroluminescent device and preparation method thereof

Abstract

The invention discloses a novel electroluminescent device and a preparation method thereof and belongs to the field of semiconductor optoelectronic devices. The invention provides the electroluminescent device based on a metal nanostructure / zinc oxide microwire composite structure. The device includes a Ga-doped ZnO microwire, a metal nanostructure, an indium electrode and a quartz wafer. The Ga-doped ZnO microwires prepared in the present invention have a diameter ranging from 5 to 30 micrometers and a length of up to 2 cm, Ga is selected as an effective donor doping source, an electroluminescent light source with different Ga doping concentrations and a tunable light-emitting center wavelength in the range of 500 nm to 650 nanometers by changing the mass ratio of a reaction source. Thanks to a strong local field enhancement effect of the metal nanostructure, the surface modification of the metal nanostructure is performed on ZnO:Ga microwires by physical sputtering and spin coating methods, the control of the light-emitting center wavelength and light-emitting area of the microwires is achieved, and therefore, a local-type point light source and an array light source with alternately red and green are prepared.

Description

Technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and particularly relates to a novel electroluminescent device and a preparation method thereof. Background technique [0002] With the rapid development of photoelectric material preparation technology and characterization methods, the integration of optoelectronic functional devices is getting higher and higher, and the size of the devices is gradually approaching the physical limit. Therefore, the preparation of new micro-nano materials with controllable size, shape and composition and the research of micro-nano devices are particularly important. One-dimensional semiconductor micro-nano structures are considered to be one of the most ideal materials for integrated optoelectronic devices because of their superior optoelectronic properties, unique geometric structures, and natural side and end surfaces as resonant cavities. At the same time, compared with planar structures, semico...

AI Technical Summary

Problems solved by technology

As a semiconductor micro-nano light source, it is inevitable to face four problems: whether the carriers can be effectively injected; the improvement of the quality of the semiconductor micro-nano structure-based optical resonator; the suppression and regulation of the surface defects of the semiconductor micro-nano structure; the metal / semiconductor Dissipation of contact-induced Joule heat

However, for a single micro-nano structure, the tuning range of the emission wavelength is limited, and the active tuning of a single device still has certain limitations.

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