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Silicon micro-pillar array three-electrode ionization microsystem haze sensor and preparation method

A micro-column and sensor technology, which is applied in the fields of instruments, scientific instruments, suspensions and porous materials analysis, etc., can solve the problems of not seeing the sensor, etc., and achieve the effect of large collector current, high resolution and small work function

Active Publication Date: 2022-08-09
XI AN JIAOTONG UNIV
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  • Application Information

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Problems solved by technology

Professor Zhang Yong's research group from Xi'an Jiaotong University has studied a three-electrode ionization microsystem haze sensor based on silicon microcolumn arrays, which can respond to a minimum of 0.1μg / m 3 The concentration of particulate matter, the detection range is 0-10mg / m 3 At present, there are no reports on the research results of this kind of sensors at home and abroad.

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  • Silicon micro-pillar array three-electrode ionization microsystem haze sensor and preparation method
  • Silicon micro-pillar array three-electrode ionization microsystem haze sensor and preparation method

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preparation example Construction

[0047] The preparation method of the three-electrode ionization microsystem haze sensor of silicon micro-pillar array comprises the following steps:

[0048] 1) Pretreatment before deep silicon etching: Three electrode silicon wafers etched with small through holes, lead-out holes and deep grooves are selected as the substrate, and pretreatment of deep silicon etching is carried out before cleaning, gluing, and exposure;

[0049] 2) Silicon micro-pillar array etching: The sensor silicon micro-pillar array is prepared by the deep reactive ion etching DRIE method based on the alternating reciprocating Bosch process; in the Bosch process, the two steps of etching and passivation will be alternated until Reach the etching depth requirement.

[0050] In continuous access to SF 6 protective gas, C 4 F 8 Under the condition of etching gas for 2 to 15s, set the pressure to 6Pa, the radio frequency power to 20 to 70W, the source power to 220 to 450W, C 4 F 8 with SF 6 The gas flo...

Embodiment 1

[0057] There are 2 small through holes 1-1 on the electrode of the first electrode, the hole diameter is set at 3mm, and the ratio of the distance between the first electrode and the second electrode to the small through hole is 3 / 32; 9 small lead-out holes, the diameter of the small lead-out hole is 1.2mm, and the ratio between the pole spacing between the first electrode and the second electrode, between the second electrode and the third electrode and the diameter of the small lead-out hole is 1 / 16; There is a deep groove on the electrode, the side length of the deep groove is 6×8 mm, the depth is 200 μm, and the ratio of the electrode spacing between the second electrode and the third electrode to the hole depth of the collector deep groove is 15 / 40. The inner surface of the first electrode is prepared with a silicon micro-pillar array structure with an interval of 10 μm, a diameter of 8 μm and a height of 40 μm.

[0058] The preparation steps of the silicon micro-pillar a...

Embodiment 2

[0070] The basic structure of this embodiment is the same as that of Embodiment 1, the difference is that there are 16 small through holes on the electrode of the first electrode, the diameter of which is set at 3.6mm, the distance between the first electrode and the second electrode and the small through holes The ratio of the aperture is 1 / 60; the second electrode has 16 small extraction holes from the center, the aperture of the small extraction hole is 5.0mm, and the ratio of the electrode spacing between the first electrode and the second electrode to the aperture of the small extraction hole is 3 / 250; the ratio of the electrode spacing between the second electrode and the third electrode to the diameter of the small lead-out hole is 9 / 1000; the third electrode is provided with 12 deep grooves, the side length of the deep groove is 1.0×1.0mm, and the depth is 100μm, The ratio between the electrode spacing between the second electrode and the third electrode and the groove...

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Abstract

The invention discloses a silicon micro-column array three-electrode ionization type micro-system micro-system haze sensor and a preparation method, comprising three first, second and third electrodes sequentially distributed from bottom to top. A silicon substrate prepared with a silicon micro-pillar array and a cathode with small through holes; the second electrode is composed of a lead-out electrode with small lead-out holes; the third electrode is composed of a collector electrode with deep grooves on the inner surface; three The electrodes are isolated from each other by insulating struts, respectively. The sensor detects the concentration of haze particles by detecting the output current. The collector current is large, the sensitivity is high, the range is wide, the resolution is high, and it can respond to the particle concentration of various particle sizes. Ultrasonic cleaning has high efficiency, non-contact operation, and will not damage the sensor.

Description

technical field [0001] The invention relates to the field of haze particle detection, in particular to a sensor capable of sensitizing haze particles of different concentrations based on a silicon micron column array and the principle of gas discharge. Background technique [0002] Smog has become a major pollution problem faced by many cities in my country. At present, coal-fired power generation is the main power generation method in my country. The flue gas emitted by thermal power plants transports a large amount of particulate matter into the atmosphere, which is one of the main reasons for the haze weather in my country. In order to effectively control the pollution of solid particles, the first thing to do is to carry out accurate detection. At present, the main methods for the detection of particle number concentration at home and abroad include chemical microporous membrane microscope counting method and light scattering particle counter; the main methods for the d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N15/06
CPCG01N15/0656Y02A50/20
Inventor 张勇程珍珍唐宇杰王迪孙利利郝云鹤周锦堂章凯王睿哲邓元刚朱程鹏童佳明陈麒宇韩文杨彬吴健白晓春
Owner XI AN JIAOTONG UNIV
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