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Magnetic molybdenum disulfide microwave absorber doped with transition metal elements and preparation method thereof

A technology of transition metal elements and microwave absorbers, applied in the direction of molybdenum sulfide, chemical instruments and methods, nickel compounds, etc., to achieve the effects of low production cost, high yield, and reduced matching thickness

Active Publication Date: 2021-01-01
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Whether transition metal doping can effectively regulate MoS 2 Electromagnetic parameters to improve its absorbing performance, no report

Method used

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  • Magnetic molybdenum disulfide microwave absorber doped with transition metal elements and preparation method thereof
  • Magnetic molybdenum disulfide microwave absorber doped with transition metal elements and preparation method thereof
  • Magnetic molybdenum disulfide microwave absorber doped with transition metal elements and preparation method thereof

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Experimental program
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Embodiment 1

[0041] A magnetic molybdenum disulfide microwave absorber doped with transition metal elements, the chemical formula is Ni 0.03 Mo 0.97 S 2 .

[0042] In this embodiment, the matching thickness of the magnetic molybdenum disulfide microwave absorber doped with transition metal elements is 2.05mm, the maximum reflection loss value is -58.08dB, the peak value is at 13.72GHz, and the effective bandwidth with the reflection loss value less than -10dB is 5.32 GHz.

[0043] A preparation method of the magnetic molybdenum disulfide microwave absorber doped with transition metal elements of the present embodiment, comprising the following steps:

[0044] (1) Weigh 2.42g sodium molybdate (Na 2 MoO 4 2H 2 O) and 2.63 g thioacetamide (CH 3 CSNH 2 ), mixed with 100 mL of deionized water, magnetically stirred for 10 min to fully dissolve the reactants, and added 0.077 g of nickel acetate (C 4 h 6 o 4 Ni·4H 2 O), magnetically stirred for 15 min until completely dissolved to obta...

Embodiment 2

[0053] A magnetic molybdenum disulfide microwave absorber doped with transition metal elements, the chemical formula is Ni 0.07 Mo 0.93 S 2 .

[0054] In this embodiment, the matching thickness of the magnetic molybdenum disulfide microwave absorber doped with transition metal elements is 2.52 mm, and the maximum reflection loss value for electromagnetic waves in the frequency range of 2 to 18 GHz is −55.40 dB, with a peak value at 10.21 GHz. The effective bandwidth for values ​​less than −10dB is 3.79GHz.

[0055] A preparation method of the magnetic molybdenum disulfide microwave absorber doped with transition metal elements in this embodiment is basically the same as the preparation method in Example 1, the only difference being that the amount of nickel acetate used in step (1) is 0.187g .

[0056] Figure 5 It is the magnetic molybdenum disulfide microwave absorber (Ni 0.07 Mo 0.93 S 2 ) of the VSM curve. Figure 6 It is the magnetic molybdenum disulfide microwav...

Embodiment 3

[0058] A magnetic molybdenum disulfide microwave absorber doped with transition metal elements, the chemical formula is Mn 0.03 Mo 0.97 S 2 .

[0059] In this embodiment, the matching thickness of the magnetic molybdenum disulfide microwave absorber doped with transition metal elements is 2.0 mm, and the maximum reflection loss value for electromagnetic waves in the frequency range of 2 to 18 GHz is −43.78 dB, and the peak value is at 16.30 GHz. The effective bandwidth for values ​​less than −10dB is 4.74GHz.

[0060] A preparation method of the magnetic molybdenum disulfide microwave absorber doped with transition metal elements of the above-mentioned present embodiment is basically the same as the preparation method of embodiment 1, the only difference is that in step (1), manganese acetate is used instead of nickel acetate, And the consumption of manganese acetate is 0.076g.

[0061] Figure 7 It is the magnetic molybdenum disulfide microwave absorber (Mn 0.03 Mo 0.9...

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Abstract

The invention discloses a transition metal doped magnetic molybdenum disulfide microwave absorbent and a preparation method thereof. The chemical formula of the absorbent is D<x>Mo<1 x>S<2>, wherein Drepresent a transition metal element. The preparation method comprises following steps: mixing a molybdenum source, a sulfur source, transition metal salts, and water; and carrying out hydrothermal reactions of the mixed solution to obtain the absorbent. The transition metal doped magnetic molybdenum disulfide microwave absorbent has the advantages of good impedance matching effect, strong wave absorbing performance, and good uniformity; meets the thin, light, wide, and strong requirements; can be used to shield electromagnetic radiation, can be used an electromagnetic radiation shielding material of mobile phones and household appliances, and has a good application value and application prospect. The preparation method has the advantages of simple technology, easy operation, low production cost, and high yield, can be applied to massive production, and is beneficial for industrial production.

Description

technical field [0001] The invention belongs to the technical field of microwave absorbers and electromagnetic shielding materials, in particular to a magnetic molybdenum disulfide microwave absorber doped with transition metal elements and a preparation method thereof. Background technique [0002] Research and development of high-performance microwave absorbing materials is an important topic in this field. MoS 2 It is a two-dimensional material that has been studied more and more important in recent years. It has a layered structure similar to graphene materials. This material is not only widely used in many fields such as energy storage, catalysis, lubrication, and semiconductors, but also has excellent Microwave absorption properties. In September 2015, Ning et al. first investigated the ultrasonic mechanical exfoliation of MoS 2 Electromagnetic parameters of nanosheets, and with micron-sized MoS 2 For comparison, it is found that: MoS 2 The dielectric constant of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G39/06C01G53/00C09K3/00
CPCC01G39/06C01G53/006C01P2002/54C01P2002/72C01P2004/03C09K3/00
Inventor 王璟林潇羽楚增勇张冶黄振宇穆思彤
Owner NAT UNIV OF DEFENSE TECH
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