Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing Cf-coated Cu/Mg2Si-Al2O3 composite material

A composite material and coating technology, which is applied in the field of preparing Cf-coated Cu/Mg2Si-Al2O3 composite materials, can solve the problems of high room temperature brittleness, hindering intermetallic compounds, and low high-temperature strength

Inactive Publication Date: 2018-12-18
QIDONG XIANGRUI CONSTR CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The two disadvantages of high room temperature brittleness and low high temperature strength are still the main problems hindering the practical application of intermetallic compounds. After nearly 30 years of hard work, although there has been a great improvement and understanding at the level of knowledge, there is still no research on performance. obvious progress

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A preparation C f-包覆Cu / Mg 2 Si-Al 2 o 3 The method for the composite material comprises the steps of: cutting 20 parts of carbon fiber to 3 mm, putting it into a beaker containing 50 parts of nitric acid with a mass fraction of 65%, placing it in an ultrasonic cleaning instrument, and ultrasonic pickling at 32°C for 1.5 h, the acidified carbon fiber is washed with distilled water until it is neutral, put it in a drying oven and dried at 60°C, put the acidified short carbon fiber into the electroplating solution, disperse the carbon fiber with a magnetic stirrer, and use electrochemical copper plating , the copper plating voltage is 3.5V, the time is 50min, the carbon fiber after copper plating is cleaned with distilled water, and then dried in a drying oven; 30 parts of Mg powder and 20 parts of Si powder are mixed, and 15 parts of Al are added 2 o 3 , and then evenly mix 8 parts of C with a mass fraction of 1.5% f and 12 parts of 10% stearic acid, put it into a p...

Embodiment 2

[0019] A preparation C f-包覆Cu / Mg 2 Si-Al 2 o 3 A method for composite materials, comprising the steps of: cutting 15 parts of carbon fiber to 3 mm, putting it into a beaker containing 45 parts of nitric acid with a mass fraction of 65%, placing it in an ultrasonic cleaning instrument, and ultrasonic pickling at 30°C for 1 hour , the acidified carbon fiber is washed with distilled water until it is neutral, put it in a drying oven and dried at 55°C, put the acidified short carbon fiber into the electroplating solution, use a magnetic stirrer to disperse the carbon fiber, and use electrochemical copper plating, The copper plating voltage is 3V, the time is 45min, the carbon fiber after copper plating is cleaned with distilled water, and then put into a drying oven to dry; mix 25 parts of Mg powder and 15 parts of Si powder, add 10 parts of Al 2 o 3 , and then evenly mix 5 parts of C with a mass fraction of 1.5% f and 8 parts of 10% stearic acid, put it into a planetary bal...

Embodiment 3

[0021] A preparation C f-包覆Cu / Mg 2 Si-Al 2 o 3 A method for composite materials, comprising the steps of: cutting 25 parts of carbon fiber to 3mm, putting it into a beaker containing 55 parts of nitric acid with a mass fraction of 65%, placing it in an ultrasonic cleaning instrument, and ultrasonic pickling at 35°C for 2 hours , the acidified carbon fiber is washed with distilled water to neutrality, put into a drying oven and dried at 65°C, put the acidified short carbon fiber into the electroplating solution, use a magnetic stirrer to disperse the carbon fiber, and use electrochemical copper plating, The copper plating voltage is 4V, the time is 55min, the carbon fiber after copper plating is cleaned with distilled water, and then dried in a drying oven; 35 parts of Mg powder and 25 parts of Si powder are mixed, and 20 parts of Al 2 o 3 , and then evenly mix 10 parts of C with a mass fraction of 1.5% f and 14 parts of 10% stearic acid, put it into a planetary ball mill...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
quality scoreaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a Cf-coated Cu / Mg2Si-Al2O3 composite material. The method comprises: chopping carbon fibers, putting the chopped carbon fibers into nitric acid, carryingout ultrasonic pickling for 1-2h, carrying out cleaning and drying, putting the carbon fibers into a plating solution, dispersing the carbon fibers through a magnetic stirrer, planting copper throughan electrochemical method, cleaning and drying the copper-plated carbon fibers through distilled water, mixing Mg powder and Si powder, adding Al2O3 into the mixed powder, uniformly mixing the powder, Cf and stearic acid, carrying out ball milling through a planetary ball mill, after mechanical activation, putting the mixed powder into a steel mold, carrying out cold pressing to obtain a rough blank sample of 20mm, carrying out heat preservation on the rough blank sample in a vacuum hot-press sintering furnace at 780-790 DEG C under 20-24 MPa for 1.5-2.5h and carrying out cooling. The methodis simple and is easy to operate. The prepared composite material fibers are uniformly distributed. The Cf-coated Cu / Mg2Si-Al2O3 composite material has a compact structure, good strength and toughness, stable mechanical properties at the room temperature and good electrical conductivity.

Description

technical field [0001] The present invention relates to a kind of preparation C f-包覆Cu / Mg 2 Si-Al 2 o 3 Composite method. Background technique [0002] Mg 2 Si has excellent properties such as low density, high melting point, high specific strength, and high thermal stability, making it a potential lightweight high-temperature structural material; at the same time, Mg 2 Si is a narrow-bandgap n-type semiconductor with high thermoelectric potential and low thermal conductivity. It is rich in raw materials, non-toxic and non-polluting. It is a green medium-temperature thermoelectric material with great development potential. However, Mg 2 Si, like other intermetallic compounds, has less slippage that causes plastic deformation and fluidity, making it more brittle at room temperature. In addition, when the temperature exceeds 800 °C or 1000 °C, the strength of the intermetallic compound is greatly reduced, showing metal-like ductility. The two disadvantages of high roo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/58C04B35/622C04B35/626C25D5/54C25D3/38
CPCC04B35/80C04B35/58085C04B35/622C04B35/62605C04B2235/3217C04B2235/407C04B2235/5248C04B2235/6567C25D3/38C25D5/54
Inventor 不公告发明人
Owner QIDONG XIANGRUI CONSTR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com