Corrosion method of gallium germanium arsenide single crystal dislocation pit and corrosion solution formula

A technology of gallium arsenide and corrosion solution, which is applied in the field of chemical technology, can solve the problems of too large, fragile and cracked corrosion loss of the wafer to be tested, and achieve the effects of low corrosion loss, reducing stress concentration, and ensuring integrity

Inactive Publication Date: 2018-12-18
HANERGY NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Embodiments of the present invention provide an etching method for GaAs single crystal dislocation pits and an etching solution formula to solve the problem that

Method used

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  • Corrosion method of gallium germanium arsenide single crystal dislocation pit and corrosion solution formula
  • Corrosion method of gallium germanium arsenide single crystal dislocation pit and corrosion solution formula
  • Corrosion method of gallium germanium arsenide single crystal dislocation pit and corrosion solution formula

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Embodiment 1

[0027] refer to figure 1 , showing a step-by-step flowchart of a GaAs single crystal dislocation pit etching method, combined with figure 2 The schematic diagram of the framework shown, the specific steps of this application include:

[0028] Step 101: Polishing the observation surface of the GaAs wafer to be tested (10) to obtain the wafer to be tested.

[0029] Optionally, the GaAs single crystal material includes n-type GaAs doped with Si (Si, silicon) semiconductor, p-type GaAs doped with Zn (Zn, zinc) semiconductor, GaAs doped with C (C, carbon) semi-insulating semiconductor and other GaAs Single crystal materials, as long as the main body is a GaAs single crystal material, can be used in this solution, and the present invention does not limit the specific type of GaAs single crystal material.

[0030] In a specific application, the embodiments of the present invention can use professional polishing equipment to mechanically polish the GaAs wafer (10) to be tested, or ...

Embodiment 2

[0056] The invention provides a corrosive liquid formula, comprising:

[0057] The corrosion solution is obtained by mixing hydrofluoric acid, hydrogen peroxide and deionized water.

[0058] Optionally, the volume ratio of hydrofluoric acid, hydrogen peroxide and deionized water in the corrosion solution is (2-8):(0.5-2):(88-97).

[0059] For example, the proportion of the corrosion solution can be prepared by mixing hydrofluoric acid, hydrogen peroxide, and deionized water with a volume ratio of 2:0.5:88, or it can be prepared by mixing hydrofluoric acid, hydrogen peroxide, and deionized water with a volume ratio of 8:2:97. Ionized water is mixed and prepared, or prepared in proportion to any value within the corresponding ranges of hydrofluoric acid, hydrogen peroxide, and deionized water (2-8): (0.5-2): (88-97).

[0060] Preferably, the volume ratio of hydrofluoric acid, hydrogen peroxide and deionized water in the mixed liquid is 5:1:94.

[0061] It should be...

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Abstract

The invention discloses a corrosion method of a germanium gallium arsenide (GaAs) single crystal dislocation pit and a corrosion solution formula, which relates to the technical field of chemistry process. The method comprises the following steps: polishing an observation surface comprising a to-be-detected GaAs{100} wafer with a crystal orientation deflection angle in a preset deflection angle range,and to obtaining the to-be-detected wafer; preparing a mixed solution of hydrofluoric acid, hydrogen peroxide and deionized water according to a preset ratio as a corrosion solution, and placing the corrosion solution in a corrosion trough; placing the corrosion trough in a water-bath pot with an ice-water mixture, and keeping the temperature of the corrosion solution in the corrosion trough at 3 to 8 DEG C; starting a light source, and enabling the light to shine on the bottom of the corrosion trough; and placing the to-be-detected wafer on a hollowed base, placing the hollowed base in the corrosion trough, enabling the to-be-detected wafer on the hollowed base to be in an illumination range of a cold light source in the corrosion trough, soaking the to-be-detected wafer with the corrosion solution, and reacting for 30 to 50 minutes. By adopting the corrosion method, the breaking of the wafer in the corrosion process can be avoided, and the corrosion amount can be reduced.

Description

technical field [0001] The invention relates to the technical field of chemical technology, in particular to an etching method for GaAs single crystal dislocation pits and an etching solution formula. Background technique [0002] Gallium arsenide is an important semiconductor material. Because its electron mobility is 6 times greater than that of silicon, it has better performance in high-frequency applications, such as ultra-high-speed, ultra-high-frequency devices and integrated circuits. Moreover, photoelectric data can be processed simultaneously on a gallium arsenide chip, so it is widely used in the field of electronics. Gallium arsenide has superior performance and a wide range of uses, so it is particularly important to control its quality. Dislocation is an internal microscopic defect of crystal materials, which is caused by the slippage of local regions in the crystal, and is the basic factor determining the mechanical properties of crystals such as metals. Dis...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/42
Inventor 刘国军肖亚东段静芳谈笑天
Owner HANERGY NEW MATERIAL TECH CO LTD
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