A DC generator based on a moving Schottky junction and a preparation method thereof

A DC generator, Schottky junction technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the wear of nanowires and electrodes, affecting the performance and life of nanogenerators, and the failure of generators to work properly, etc. problem, to achieve the effect of less wear and stable work

Inactive Publication Date: 2018-12-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the distance between the driving electrode and the zinc oxide nanowire needs to be precisely controlled, and a small amount of error will cause the generator to not work normally; the free end and t

Method used

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  • A DC generator based on a moving Schottky junction and a preparation method thereof
  • A DC generator based on a moving Schottky junction and a preparation method thereof
  • A DC generator based on a moving Schottky junction and a preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0022] Example 1:

[0023] 1) Make an electrode on the back of the N-type doped silicon wafer, the material is a 100nm titanium / gold electrode, and then immerse it in acetone and isopropanol solutions to clean the surface, clean it with deionized water, take it out and dry it;

[0024] 2) Cut the graphene film to the required size, make electrodes on the front side, the material is silver paste, and then dry;

[0025] 3) Press the graphene film on the N-type silicon substrate and move each other to obtain a DC generator based on the moving Schottky junction to generate electrical signals.

[0026] The structure schematic diagram of described graphene film / N-type silicon mobile Schottky junction direct current generator is as figure 2 shown. Move the graphene film on the silicon surface by hand, and an electrical signal can be obtained at both ends of the electrode, and the resulting voltage is about 0.2V. like image 3 As shown, the size of the output voltage is related t...

Example Embodiment

[0027] Example 2:

[0028] 1) Make an electrode on the back of the N-type doped silicon wafer, the material is a 100nm titanium / gold electrode, and then immerse it in acetone and isopropanol solutions to clean the surface, clean it with deionized water, take it out and dry it;

[0029] 2) Cut the aluminum film to the required size, and make electrodes on the front, made of copper wire;

[0030] 3) Press the aluminum film on the N-type silicon substrate and move it with each other to obtain a DC generator based on the moving Schottky junction to generate electrical signals.

[0031] For the aluminum film / N-type silicon mobile Schottky junction DC generator, you only need to move the aluminum film on the silicon surface by hand, and you can get electrical signals at both ends of the electrodes, and the generated voltage is about 0.6V, such as Figure 4 shown.

Example Embodiment

[0032] Example 3:

[0033] 1) Make an electrode on the back of the N-type doped gallium arsenide chip, the material is a 100nm titanium / gold electrode, and then immerse it in acetone and isopropanol solutions to clean the surface, clean it with deionized water, take it out and dry it;

[0034] 2) Cut the aluminum film to the required size, and make electrodes on the front, made of copper wire;

[0035] 3) Press the aluminum film on the N-type gallium arsenide substrate and move each other to obtain a DC generator based on the moving Schottky junction to generate electrical signals.

[0036] The continuous power generation structure of the aluminum film / N-type gallium arsenide mobile Schottky junction DC generator is set as Figure 5 As shown, only need to keep moving the aluminum film on the surface of gallium arsenide, the electrical signal can be obtained at both ends of the electrodes, and a continuous DC signal with a voltage of about 0.5V is generated.

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Abstract

The invention relates to the technical field of green energy obtaining, and discloses a DC generator based on a moving Schottky junction, the DC generator is composed of a semiconductor substrate layer and a conductive thin film layer. A preparation method includes the following steps: a first electrode is manufactured on the back of a semiconductor substrate material. And then a second electrodeis manufactured on a flexible conductive film material; then the flexible conductive thin film material is laminated on the surface of the semiconductor substrate and moved to be in contact with eachother so as to obtain the DC generator based on a moving Schottky heterojunction, and the DC signal can be obtained by movement relative to each other. The generator based on the moving Schottky junction of the invention utilizes the drift charge of the Schottky junction region to be directionally separated under a built-in electric field, and can convert the external mechanical energy into directcurrent, thereby providing a renewable green clean energy for various electronic equipment. Piezoelectric materials are not needed, and the device structure and process are simple.

Description

technical field [0001] The invention relates to a direct current generator based on a mobile Schottky junction and a preparation method thereof, belonging to the technical field of energy acquisition devices. Background technique [0002] With the rapid development of electronic devices, people's demand for energy, especially portable energy, is increasing. Common lithium batteries can provide energy for these electronic devices, but there are problems of limited capacity and environmental pollution. Correspondingly, it cannot meet the applications in some special extreme environments. In recent years, nanogenerators, as an important new green energy device, have attracted extensive attention from research and industry. It can convert green energy such as mechanical energy and tidal energy in nature into electrical output, so as to provide renewable green and clean energy for various electronic devices, and can alleviate the energy crisis to a large extent without environm...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L21/329H01L21/34
CPCH01L29/872H01L29/66143H01L29/66969
Inventor 林时胜陆阳华冯思睿郝珍珍延燕飞
Owner ZHEJIANG UNIV
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