Preparation method for brain natriuretic peptide antigen photoelectrochemical sensor based on CeO2-CdS weakened type

A brain natriuretic peptide, photoelectrochemical technology, applied in the direction of material electrochemical variables, scientific instruments, instruments, etc., can solve the problem of low utilization rate, and achieve the effects of short response time, good stability and wide linear range

Active Publication Date: 2018-12-21
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its low utilization rate of...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1 Preparation of photoelectrochemical sensor

[0043] (1) Preparation of ceria

[0044] Dissolve 0.5 g of cerium nitrate and 0.2 g of urea in 50 mL of water, stir at room temperature for 20 min, then transfer the mixed solution into a reaction kettle, and react at 100 °C for 6 h, after the reaction is cooled to room temperature, wash with absolute ethanol and ultrapure water for 3 times, and vacuum-dried; the obtained powder was calcined at 350 °C for 4 h;

[0045] (2) Preparation of ceria-cadmium sulfide composite

[0046] Dissolve 0.05 g of the prepared ceria in 20 mL of water, then add 0.1 g of cadmium acetate and 0.1 g of thiourea, stir for 1 h, adjust the pH to 8 with 0.5 M sodium hydroxide solution, and continue stirring for 2 h Transfer to the reaction kettle and react at 150 °C for 10 h, after cooling to room temperature, wash with absolute ethanol and ultrapure water for 3 times, then vacuum-dry at 40 °C for 10 h;

[0047] (3) Preparation of silic...

Embodiment 2

[0061] Example 2 Preparation of photoelectrochemical sensor

[0062] (1) Preparation of ceria

[0063] Dissolve 1.0 g of cerium nitrate and 0.3 g of urea in 70 mL of water, stir at room temperature for 20 min, then transfer the mixed solution into a reaction kettle, and react at 120 °C for 8 h, after the reaction is cooled to room temperature, wash with absolute ethanol and ultrapure water for 3 times, and vacuum-dried; the obtained powder was calcined at 400 °C for 6 h;

[0064] (2) Preparation of ceria-cadmium sulfide composite

[0065] Dissolve 0.1 g of the prepared ceria in 20 mL of water, then add 0.1 g of cadmium acetate and 0.1 g of thiourea, stir for 1 h, adjust the pH to 10 with 0.5 M sodium hydroxide solution, and continue stirring for 2 h Transfer to the reaction kettle and react at 180 °C for 12 h, after cooling to room temperature, wash with absolute ethanol and ultrapure water for 3 times, then vacuum-dry at 50 °C for 12 h;

[0066] (3) Preparation of silica ...

Embodiment 3

[0080] Example 3 Preparation of photoelectrochemical sensor

[0081] (1) Preparation of ceria

[0082] Dissolve 1.5 g of cerium nitrate and 0.5 g of urea in 100 mL of water, stir at room temperature for 50 min, then transfer the mixed solution into a reaction kettle, and react at 150 °C for 10 h, after the reaction is cooled to room temperature, wash with absolute ethanol and ultrapure water for 3 times, and vacuum-dried; the obtained powder was calcined at 500 °C for 8 h at high temperature;

[0083] (2) Preparation of ceria-cadmium sulfide composite

[0084] Dissolve 0.2 g of the prepared ceria in 20 mL of water, then add 0.2 g of cadmium acetate and 0.2 g of thiourea, stir for 2 h, adjust the pH to 12 with 0.5 M sodium hydroxide solution, and continue stirring for 2 h Transferred to the reactor and reacted at 200 °C for 14 h, cooled to room temperature, washed with absolute ethanol and ultrapure water for 3 times, and vacuum-dried at 60 °C for 14 h;

[0085] (3) Preparat...

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PUM

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Abstract

The invention relates to a preparation method for a brain natriuretic peptide antigen photoelectrochemical sensor based on a CeO2-CdS weakened type. The invention uses CeO2-CdS as a substrate materialand irradiates with visible light to obtain a photocurrent. Energy bands of the CdS and the CeO2 match well, so that efficiency of photoelectric conversion is greatly improved. The SiO2/PDA-Ag nanocomposite has large steric hindrance, and energy transfer exists between Ag nanoparticles and the substrate CdS, so that photoelectric response is double weakened, change value of the photoelectric response is increased, thus sensitivity of the sensor is improved. Detection of brain natriuretic peptide antigen is achieved according to different influences of objects to be tested with different concentrations on intensity of photoelectric signals. A detection limit is 0.05 pg/mL.

Description

technical field [0001] The present invention relates to SiO-based 2 / PDA-Ag nanocomposite weakens CeO 2 -The preparation method of the brain natriuretic peptide antigen photoelectrochemical sensor of CdS, specifically with CeO 2 -CdS as base material, SiO 2 / PDA-Ag nanocomposite is used as a secondary antibody marker to prepare a photoelectrochemical sensor for detecting brain natriuretic peptide antigen, which belongs to the field of new functional materials and biosensing detection technology. Background technique [0002] Heart failure, referred to as heart failure, refers to the failure of the venous blood to fully discharge the heart due to cardiac systolic and / or diastolic dysfunction, resulting in blood stasis in the venous system and insufficient blood perfusion in the arterial system, resulting in cardiac circulation syndrome. , This kind of disorder symptom group manifests as pulmonary congestion and vena cava congestion. Heart failure is not an independent dis...

Claims

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Application Information

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IPC IPC(8): G01N27/26G01N27/327
CPCG01N27/26G01N27/3278
Inventor 魏琴徐芮张勇范大伟马洪敏杜斌
Owner UNIV OF JINAN
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