A thermally induced voltage material and application thereof

Abstract

The invention discloses a thermally induced voltage material and application thereof, belonging to the technical field of transverse thermoelectric materials and devices. A (Ca/Sr) 3Co4O9 or (Ca/Na) xCoO2 (x=0. 52-0.8) thin film is selected as thermally induced voltage material in the present invention. As the thermal field or the thermal fluid induce voltage material of the invention has high signal response rate and does not need to establish heat balance, the response time is fast, and the signal repeatability and the linear relationship are good; the temperature gradient of the thermally induced voltage thin film is converted into a larger thermoelectric voltage signal by directly using heat source or thermal field heating, which has no time term, strong anti-interference ability, no power supply driving, no refrigeration and amplification, and can be used to fabricate some sensitive and fast thermally induced voltage detection devices. The temperature and thermoelectric potentialare perpendicular to each other, and can modulate dimension and direction independently. It is easy to fabricate arrays to detect transient thermal field or heat flux. Compared with the current devices, the material has great breakthrough and advantages, and can be used in the industrial and military fields of pulse or continuous thermal signal detection, transient thermal field and thermal fluiddetection.

Description

technical field [0001] The invention relates to a heat-induced voltage material and its application, and belongs to the technical field of lateral thermoelectric materials and devices. Background technique [0002] At present, contact thermal field and heat flow sensors are thermal resistance type, which are mainly divided into thermal resistance type and thermoelectric type according to the physical quantity (temperature gradient, heat capacity, resistance, thermoelectric potential, etc.) associated with the thermal resistance layer and temperature; The absorption of heat and thermal balance will cause certain damage to the thermal field, resulting in measurement error and response time. Thermal resistance sensors are based on the one-to-one correspondence between the resistance and temperature of metals or semiconductors. The temperature is determined by measuring the resistance of the metal or semiconductor detection element. This type of detector needs to be driven by a ...

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Problems solved by technology

Thermoelectric sensors, mainly wire-wound, semiconductor, and ultra-thin (Gardon meters), are thermoelectric potentials generated by thermal fields or thermal fluids sweeping or impacting thermoelectric material elements (thermal resistance layers) to bring about temperature gradients To calibrate the temperature or heat flux density, no power drive is required, but cooling components such as water cooling are required, and the thermoelectric potential is in the same direction as the temperature gradient; usually, in order to obtain a large output signal, it is necessary to connect many thermocouples in series to form a thermopile, and the volume increases. The signal is large, which can reflect the average characteristics of multiple signals, and the response time is on the order of 0.1s~20ms; in fact, the design of the cold end, hot end, electrode and refrigeration components in the limited space in the direction of the temperature gradient is complicated. , it is difficult to prepare an array

The above-mentioned sensors are relatively complex, with large detection elements and large thermal resistance, which will damage the thermal field to a certain extent. Even the thinnest film type of 0.5mm will cause measurement deviation, slow response speed, difficult to manufacture into an array, and difficult to capture Realistic thermal fields, especially dynamic transient thermal signals

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