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AlGaN-based ultraviolet LED structure grown on Si substrate by PLD combined with MOCVD method and preparation method thereof

A LED structure and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low luminous efficiency, rough surface, and low Al atom migration ability of ultraviolet LEDs

Active Publication Date: 2019-01-04
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Research has found that AlGaN-based epitaxial materials on Si substrates using LED epitaxial materials through the growth technology Metal Organic Vapor Deposition (MOCVD) face problems such as poor growth quality of AlGaN and low luminous efficiency of UV LEDs.
This is mainly due to the following two reasons: on the one hand, Al atoms have low migration ability, and Al atoms are difficult to incorporate into the AlGaN lattice when grown by MOCVD, resulting in poor AlGaN crystal quality and rough surface; on the other hand, Si and AlGaN Lattice mismatch between large, resulting in poor quality of AlGaN crystal growth, ultimately affecting device performance

Method used

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  • AlGaN-based ultraviolet LED structure grown on Si substrate by PLD combined with MOCVD method and preparation method thereof
  • AlGaN-based ultraviolet LED structure grown on Si substrate by PLD combined with MOCVD method and preparation method thereof
  • AlGaN-based ultraviolet LED structure grown on Si substrate by PLD combined with MOCVD method and preparation method thereof

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preparation example Construction

[0041] The method for preparing an AlGaN-based ultraviolet LED structure grown on a Si substrate by combining the PLD with the MOCVD method includes the following steps:

[0042] Preparation of stepping AlGaN buffer layer: grow stepping AlGaN buffer layer on Si(111) substrate by pulsed laser deposition method, growth temperature is 600-700°C, laser energy is 200-250mJ, laser frequency is 5-30Hz, air pressure 1-30mTorr, the number of layers is 1-3, the Al composition changes from 0-0.8, and the total thickness of the film is 200-800nm; preferably, the conditions of the pulsed laser deposition method are that the growth temperature is 650-680°C, and the laser energy is 220 -230mJ, laser frequency 10-20Hz, air pressure 8-25mTorr.

[0043] Preparation of Si-doped n-type AlGaN layer: The n-type doped AlGaN layer is grown on the stepping AlGaN buffer layer by metal-organic vapor deposition method, the growth temperature is 1000-1100 °C, and the Si doping concentration is 5×10 20 -7...

Embodiment 1

[0050] A high-quality AlGaN-based deep ultraviolet LED structure epitaxially grown on a Si(111) substrate, the preparation method of the deep ultraviolet LED structure comprises the following steps:

[0051]1) Preparation of a stepping AlGaN buffer layer: a stepping AlGaN buffer layer is grown on a Si(111) substrate using PLD technology, the growth temperature is 600°C, the laser energy is 220mJ, the laser frequency is 15Hz, the gas pressure is 15mTorr, and the number of layers is 1. The Al component is 0, and the total thickness of the film is 200nm;

[0052] 2) Preparation of Si-doped n-type AlGaN layer: On the stepped AlGaN buffer layer, a Si-doped n-type doped AlGaN layer was grown by MOCVD technology, the growth temperature was 1000°C, and the Si doping concentration was 5× 10 20 cm -3 , the film thickness is 2500nm;

[0053] 3)Al 0.40 Ga 0.60 N / Al 0.50 Ga 0.50 Preparation of N multi-quantum well layer: growing Al on the n-type doped AlGaN layer by MOCVD technology...

Embodiment 2

[0058] A high-quality AlGaN-based deep ultraviolet LED structure epitaxially grown on a Si(111) substrate, the preparation method of the deep ultraviolet LED structure comprises the following steps:

[0059] 1) Preparation of a stepping AlGaN buffer layer: a stepping AlGaN buffer layer is grown on a Si(111) substrate using PLD technology, the growth temperature is 600°C, the laser energy is 220mJ, the laser frequency is 15Hz, the gas pressure is 15mTorr, and the number of layers is 3. The AL components of each layer from bottom to top are 0, 0.28 and 0.64, and the thickness of each layer is 200, 150 and 450nm;

[0060] 2) Preparation of Si-doped n-type AlGaN layer: grow Si-doped n-type AlGaN layer on the stepped AlGaN buffer layer by MOCVD technology, the growth temperature is 1100°C, and the doping concentration is 7×10 20 cm -3 , the film thickness is 3500nm;

[0061] 3)Al 0.40 Ga 0.60 N / Al 0.50 Ga 0.50 Preparation of N multiquantum well layer: growing Al on Si-doped n...

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Abstract

The invention discloses an AlGaN-based ultraviolet LED structure grown on a Si substrate by a PLD combined with a MOCVD method and a preparation method, the ultraviolet LED structure comprises a Si (111) substrate, and a stepping AlGaN buffer layer, Si-doped n-type AlGaN layer, Al0.40Ga0.60N / Al0.50Ga0.50N multiple quantum well layer, AlGaN electron blocking layer, Mg-doped p-type AlGaN layer, Mg-doped p-type GaN layer grown on the Si (111) substrate in sequence from bottom to top; the stepping AlGaN buffer layer is grown on the Si (111) substrate by a pulsed laser deposition method; and thenMOCVD is adopted to grow the Si-doped n-type AlGaN layer, Al0.40Ga0.60N / Al0.50Ga0.50N multiple quantum well layer, AlGaN electron blocking layer, Mg-doped p-type AlGaN layer, Mg-doped p-type GaN layer, thereby obtaining a high-quality AlGaN-based ultraviolet LED epitaxial material The ultraviolet LED structure has the advantages of high quality, excellent performance and the like.

Description

technical field [0001] The invention relates to an AlGaN-based ultraviolet LED manufacturing technology, in particular to an AlGaN-based ultraviolet LED structure grown on a Si substrate by PLD combined with an MOCVD method and a preparation method thereof. Background technique [0002] As an important part of the third-generation semiconductor materials, AlGaN has the advantages of wide band gap and high thermal conductivity, and can be widely used in the preparation of devices such as light-emitting diodes (LEDs), detectors (PDs), and high electron mobility devices. key role in economic development. [0003] AlGaN-based UV LEDs have important applications in the fields of UV early warning and UV phototherapy. At present, most of the ultraviolet LEDs are based on AlGaN-based epitaxial materials and chips prepared on sapphire substrates; Large size is difficult to obtain, and the quality of AlGaN epitaxial materials is poor. [0004] In order to solve the above problems, ...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L21/02H01L33/00
CPCH01L21/02381H01L21/02458H01L21/0254H01L21/0262H01L21/02631H01L21/02634H01L33/007H01L33/12
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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