Surface acoustic wave device and method for manufacturing the same

A technology of surface acoustic wave and manufacturing method, which is applied in the manufacturing/assembly of electrical components, piezoelectric/electrostrictive devices, chemical instruments and methods, etc., can solve the problems of electrical resistance deterioration of filters and the like

Active Publication Date: 2019-01-04
NDK SAW DEVICES CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is known that hillocks or voids due to so-called stress migration are formed in the IDT due to the repeated stress, and therefore the filter characteristics, specifically, the power resistance is degraded.

Method used

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  • Surface acoustic wave device and method for manufacturing the same
  • Surface acoustic wave device and method for manufacturing the same
  • Surface acoustic wave device and method for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0092] As Example 2, the piezoelectric single crystal substrate is set to 36 degrees Y-cut LiTaO 3 Examples of substrates are described. Ready as 36 degree Y-cut LiTaO 3 The main surface of the substrate is ground to a polished surface by mechanical polishing. The substrate was ultrasonically cleaned with pure water in the same manner as in Example 1, then introduced into a DC magnetron sputtering apparatus, and a titanium film and an Al-0.5Cu film were sequentially laminated. Here, the film forming rate of the titanium film was fixed at 0.23 nm / sec and the thickness of the Ti film was varied within the range of 2 nm to 50 nm. The film thickness of the Al-0.5Cu film is the same as in Example 1. In addition, the film formation rate was obtained by setting the film formation conditions of the titanium film as an argon flow rate of 50 sccm and a DC power of 300W. The substrate temperature was set to room temperature in the same manner as in Example 1.

[0093] About the prod...

Embodiment 3

[0099] As Example 3, the piezoelectric single crystal substrate is set to 50 degrees Y-cut LiTaO 3 Examples of substrates are described. Ready as 50 degree Y-cut LiTaO 3 The main surface of the substrate is ground to a polished surface by mechanical polishing. The substrate was ultrasonically cleaned with pure water in the same manner as in Example 1, then introduced into a DC magnetron sputtering apparatus, and a titanium film and an Al-0.5Cu film were sequentially laminated. Here, the film forming rate of the titanium film was fixed at 0.50 nm / sec and the thickness of the Ti film was varied within the range of 5 nm to 50 nm. The film thickness of the Al-0.5Cu film is the same as in Example 1. In addition, the film formation rate was obtained by setting the film formation conditions of the titanium film as an argon flow rate of 50 sccm and a DC power of 500 W. The substrate temperature was set to room temperature in the same manner as in Example 1.

[0100] About the pro...

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Abstract

A surface acoustic wave device includes a piezoelectric single crystal substrate and an electrode. The piezoelectric single crystal substrate is made of LiTaO3 or LiNbO3. The electrode includes a titanium film formed on the piezoelectric single crystal substrate and an aluminum film or a film containing aluminum as a main component. The aluminum film or the film is formed on the titanium film. Thealuminum film or the film containing aluminum as the main component is a twin crystal film or a single crystal film, the aluminum film or the film has a (111) plane that is non-parallel to a surfaceof the piezoelectric single crystal substrate with an angle theta, and the aluminum film or the film has a [-1, 1, 0] direction parallel to an X-direction of a crystallographic axis of the piezoelectric single crystal substrate.

Description

technical field [0001] The present invention relates to a surface acoustic wave element characterized by electrodes and a method of manufacturing the same. Background technique [0002] In order to seek further development of information and communication technology, surface acoustic wave devices are becoming more and more important. A surface acoustic wave device includes a piezoelectric single crystal substrate and comb-shaped electrodes (hereinafter sometimes referred to as an IDT (Interdigital Transducer)) formed on the substrate. As the piezoelectric single crystal substrate, a crystal, lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ) and other substrates. For example, as a substrate for a radio frequency (Radio Frequency, RF) band filter, a 64-degree rotated Y-cut LiNbO is used. 3 Substrate, or 32°~44°rotated Y-cut LiTaO 3 substrate. The reason is that the former can obtain a large electromechanical coupling coefficient, while the latter has a large elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/08H03H9/02H03H9/145
CPCH03H3/08H03H9/02929H03H9/14541C23C14/542H03H9/02559C23C14/185C30B29/02C30B23/025C30B29/30H03H9/25H03H9/6483C23C14/35H10N30/06H10N30/877
Inventor 上条敦
Owner NDK SAW DEVICES CO LTD
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