Method of electron beam/ion beam focused etching and microscopic imaging on non-conductive substrate

Abstract

The invention discloses a method of electron beam / ion beam focused etching and microscopic imaging on a non-conductive substrate, and belongs to the field of micro-nano machining. The method comprisesthe following steps: 1) designing a shape and size of a photolithographic mask; 2) performing photoetching on the non-conductive substrate; 3) performing metal plating treatment on the non-conductivesubstrate after the photolithography process to form a metal strip; 4) developing the plated non-conductive substrate to be a sample; 5) performing grounding treatment on the metal strip; 6) vacuuming the sample; 7) focusing the metal strip of the sample, selecting an electron beam stream, and adjusting a sample stage to a sample area to be engraved after the image is clear; and 8) importing or drawing the morphology of a desired etched micro-nano structure, setting parameters, and then performing FIB or EBL etching and imaging on the sample. The local conductivity of the surface of the non-conductive substrate material is effectively improved, and stable focusing of the electron beam and the ion beam is achieved, so that the micro-nano etching and microscopic imaging of the surface of anon-conductive material are realized.

Description

technical field [0001] The invention relates to the field of micro-nano processing, in particular to a method for performing electron beam / ion beam focused etching and microscopic imaging on a non-conductive substrate. Background technique [0002] Focused ion beam technology (focused ion beam, FIB) is a microdissection technology that uses electrostatic lenses to focus ion beams into very small sizes. Similarly, electron beam lithography (Electron-beam lithography, EBL) uses focused electron beams to expose the resist on the substrate to produce regions with different solubility properties in the resist. Dissolution properties, using a selective developer for development, to obtain the desired graphics. [0003] The above two technologies have important application value in the field of micro-nano processing. Principle comparison between focused ion beam microscope and scanning electron microscope, in which the ion beam is a liquid metal ion source (Liquid Metal Ion Sourc...

AI Technical Summary

Problems solved by technology

[0004] Limited by the principles of the above two techniques, if the observed sample is a non-conductive material, charged ions or electrons are easy to accumulate on the surface of the sample, thereby interacting with the focused ion beam and interfering with the focusing effect of the electron beam / ion beam, making imaging Becomes blurred, unable to perform tasks such as focused ion beam etching and electron beam etching

[0005] Now there are silicon-silicon nitride substrates with windows, which can realize the observation of some non-conductive materials to a certain extent, but the substrate material of this method is limited and must have a certain thickness of silicon layer

At the same time, it can only be used to observe

If observation and micro-nano processing on different substrate materials are to be realized, the requirements cannot be met at all.

At present, the minimum resolution that can be processed on an insulating substrate without a conductive material support is greater than 80 nanometers, which greatly limits the application range of the two technologies of focused ion beam and electron beam etching, and also hinders the research and application of related fields. caused great inconvenience

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