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A LaCu3Fe2Os2O12 ferromagnetic semiconductor and a preparation method thereof

Active Publication Date: 2019-01-08
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

With the further reduction in the size of components, which have reached the nanometer level, the problems affecting the performance and reliability of integrated devices such as leakage, heat generation, and quantum interference are finally unavoidable and have become urgent issues to be solved.

Method used

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  • A LaCu3Fe2Os2O12 ferromagnetic semiconductor and a preparation method thereof
  • A LaCu3Fe2Os2O12 ferromagnetic semiconductor and a preparation method thereof
  • A LaCu3Fe2Os2O12 ferromagnetic semiconductor and a preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0045] La with a purity higher than 99.9% 2 o 3 , Fe 2 o 3 , CuO, Os and KClO 4 Mix according to the molar ratio of 1:2:6:4:3, and grind for 30 minutes in an argon-filled glove box to obtain a mixture with a particle size of 200 mesh. The mixture was filled into gold capsules and sealed, wherein the wall thickness of the gold capsules was 0.1 mm. The gold capsule is placed in a six-sided top press, under the conditions of a pressure of 8GPa and a temperature of 1100°C, the raw materials in the gold capsule are reacted for 30 minutes to obtain a reaction product. After the temperature dropped uniformly to room temperature within 2 hours, the reaction product was taken out from the gold capsule and ground again. LaCu was obtained by washing with deionized water 3 Fe 2 OS 2 o 12 .

[0046] In this example, KClO 4 As an oxygen source, it is used to provide O atoms. Deionized water was used to remove KCl entrapped in the reaction product.

Embodiment 2

[0048] La with a purity higher than 99.9% 2 o 3 , Fe 2 o 3 , CuO, Os and NaClO 4 Mix according to the molar ratio of 1:2:6:4:3, and grind for 30 minutes in an argon-filled glove box to obtain a mixture with a particle size of 200 mesh. The mixture was filled into platinum capsules and sealed, wherein the wall thickness of the platinum capsules was 0.1 mm. Put the platinum capsule in a six-sided top press, and react the raw materials in the platinum capsule for 30 minutes under the conditions of a pressure of 8 GPa and a temperature of 1100° C. to obtain a reaction product. Cut off the heating power directly, and after the temperature drops to room temperature within 20 seconds, the reaction product is taken out from the platinum capsule and ground again. LaCu was obtained by washing with deionized water 3 Fe 2 OS 2 o 12 .

[0049] In this example, NaClO 4 As an oxygen source, it is used to provide O atoms. Deionized water was used to remove NaCl entrapped in the re...

Embodiment 3

[0051] La with a purity higher than 99.9% 2 o 3 , Fe 2 o 3 , CuO, Os and KClO 4 Mix according to the molar ratio of 1:2:6:4:3, and grind for 120 minutes in an argon-filled glove box to obtain a mixture with a particle size of 600 mesh. The mixture was filled into gold capsules and sealed, wherein the wall thickness of the gold capsules was 0.1 mm. The gold capsule is placed in a six-sided top press, and the raw materials in the gold capsule are reacted for 10 minutes under the conditions of a pressure of 10 GPa and a temperature of 1200° C. to obtain a reaction product. After the temperature dropped uniformly to room temperature within 10 hours, the reaction product was taken out from the gold capsule and ground again. LaCu was obtained by washing with deionized water 3 Fe 2 OS 2 o 12 .

[0052] In this example, KClO 4 As an oxygen source, it is used to provide O atoms. Deionized water was used to remove KCl entrapped in the reaction product.

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Abstract

The invention provides a ferromagnetic semiconductor, which has the chemical formula LaCu3Fe2Os2O12 and the space group Pn-3, that lattice constant is shown in the description the Curie temperature is520K, and the band gap width is about 0.2 eV. The invention also provides a method for preparing the ferromagnetic semiconductor, comprising: (1) grinding and mixing La2O3, Fe2O3, CuO, Os and an oxygen source to obtain a mixture; 2, fill that mixture into a gold capsule or a platinum capsule and sealing; (3) treating the gold capsule or the platinum capsule under the pressure of 6-10GPa and the temperature of 1000-1200 DEG C; And (4) cooling the reaction product obtained in the step (3) to room temperature, relieving pressure, taking out from the gold capsule or the platinum capsule, grindingand cleaning to obtain a ferromagnetic semiconductor LaCu3Fe2Os2O12. The ferromagnetic semiconductor LaCu3Fe2Os2O12 of the present invention has potential value in the future magnetic semiconductor integrated circuit device, infrared-far-infrared sensors and multifunctional integrated devices.

Description

technical field [0001] The invention relates to the field of material synthesis, in particular to a ferrimagnetic semiconductor LaCu 3 Fe 2 OS 2 o 12 and its preparation method. Background technique [0002] The contemporary and future society is dominated by information, and the processing, transmission and storage of information will require unprecedented scale and speed. Semiconductor is a material whose conductivity is between insulator and metal. Due to its special conductivity, semiconductor materials for large-scale integrated circuits and high-frequency devices play an important role in information processing and transmission. In this type of technology, they all Great use of the special conductivity of semiconductor materials; and information storage in information technology (such as magnetic tape, optical disk, hard disk, etc.) is done by magnetic materials. However, the research and application of electronic charge and magnetism are basically developed indep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01F41/00
CPCH01F1/40H01F41/00
Inventor 龙有文王潇
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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