Unlock instant, AI-driven research and patent intelligence for your innovation.

P-n type lead telluride/polypyrrole double-layer thermoelectric thin film material and preparation method thereof

A technology of pyrrole double-layer and thermoelectric thin film, which is applied in the directions of thermoelectric device junction lead-out material, thermoelectric device manufacture/processing, etc., to achieve the effect of good thermoelectric performance and low cost

Active Publication Date: 2021-11-12
HENAN INST OF ENG
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above methods have prepared some composite materials with high thermoelectric properties, but by selecting suitable P-type and N-type thermoelectric materials, nano-multilayer thermoelectric films are prepared, and P-type and N-type multilayer thermoelectric films can realize P-N structures. Synergistic effect, in order to achieve the purpose of improving the thermoelectric properties of materials, but there are few studies on the preparation of p-n type organic-inorganic double-layer thermoelectric thin film materials. This patent proposes to use hydrothermal method combined with gas phase method to prepare p-n type lead telluride / polypyrrole double-layer thermoelectric film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • P-n type lead telluride/polypyrrole double-layer thermoelectric thin film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The invention provides a p-n type lead telluride / polypyrrole double-layer thermoelectric thin film material. The p-n type lead telluride / polypyrrole double-layer thermoelectric thin film is prepared by a hydrothermal method combined with a gas phase method.

[0020] (1) To prepare lead telluride film, dissolve lead acetate, sodium telluride, sodium hydroxide, and sodium citrate into a mixture of alcohol and water, in which the mass of lead acetate, sodium telluride, sodium hydroxide, and sodium citrate The ratio is: 1:1.5:0.5:0.2, the above mixed solution is added to the polytetrafluoroethylene lining of the reaction kettle, and the silicon wafer with the electrode is placed in the polytetrafluoroethylene lining obliquely, the inclination angle is 35°, then the reaction temperature is 100°C, and the reaction time is 6h. After the reaction, the sample is taken out, and the obtained sample is washed several times with deionized water and alcohol, and dried at 50°C for 2h. ...

Embodiment 2

[0024] The invention provides a p-n type lead telluride / polypyrrole double-layer thermoelectric thin film material. The p-n type lead telluride / polypyrrole double-layer thermoelectric thin film is prepared by a hydrothermal method combined with a gas phase method.

[0025] (1) To prepare lead telluride film, dissolve lead acetate, sodium telluride, sodium hydroxide, and sodium citrate into a mixture of alcohol and water, in which the mass of lead acetate, sodium telluride, sodium hydroxide, and sodium citrate The ratio is: 1:1.5:0.5:0.2, the ratio of alcohol to water is 1:2, the above mixture is added to the polytetrafluoroethylene lining of the reaction kettle, and the silicon wafer with the electrode is placed obliquely on the polytetrafluoroethylene In the tetrafluoroethylene lining, the inclination angle is 10°, and then the reaction temperature is 100°C, and the reaction time is 5h. After the reaction is completed, the sample is taken out, and the obtained sample is cleane...

Embodiment 3

[0028] The invention provides a p-n type lead telluride / polypyrrole double-layer thermoelectric thin film material. The p-n type lead telluride / polypyrrole double-layer thermoelectric thin film is prepared by a hydrothermal method combined with a gas phase method.

[0029] (1) To prepare lead telluride film, dissolve lead acetate, sodium telluride, sodium hydroxide, and sodium citrate into a mixture of alcohol and water, in which the mass of lead acetate, sodium telluride, sodium hydroxide, and sodium citrate The ratio is: 1:2: 0.8: 0.5, the above mixed solution is added to the polytetrafluoroethylene lining of the reactor, and the silicon wafer with the electrode is placed in the polytetrafluoroethylene lining obliquely, and the inclination angle is 45°, then the reaction temperature is 150°C, and the reaction time is 15h. After the reaction, the sample is taken out, and the obtained sample is washed several times with deionized water and alcohol, and dried at 60°C for 5h. The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a p-n-type lead telluride / polypyrrole double-layer thermoelectric thin film material and a preparation method thereof. A p-n-type lead telluride / polypyrrole double-layer thermoelectric thin film is prepared by a hydrothermal method combined with a gas phase method. The thickness of the lead oxide film is 20nm-300nm, and the thickness of the polypyrrole film is 20nm-300nm. The lead telluride / polypyrrole double-layer thermoelectric thin film material prepared by the method has good thermoelectric properties, and can be used for power supply of portable wireless sensors, refrigeration of integrated circuit chips, refrigeration of light-emitting diodes and photodetectors, and the like. It has the advantages of low cost, convenience and speed, and can be produced on a large scale.

Description

technical field [0001] The invention relates to the technical field of composite material preparation, in particular to a p-n type lead telluride / polypyrrole double-layer thermoelectric thin film material and a preparation method thereof. Background technique [0002] Energy and environmental issues are two urgent issues that need to be solved to achieve sustainable development in today's society. Finding new clean and alternative energy sources has become a major topic of concern in academia and industry. Thermoelectric conversion materials are materials that use the Seebeck effect and the Peltier effect to directly convert heat energy and electric energy, and are important clean energy materials. Power generation or refrigeration devices made of thermoelectric materials have the advantages of reliable performance, no pollution, no noise during operation, and long service life. They are widely used in thermoelectric power generation and electric refrigeration equipment. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/24H01L35/34H10N10/852H10N10/01H10N10/856
CPCH10N10/856H10N10/852H10N10/01
Inventor 刘少辉王娇丁俊郝好山赵利敏夏思怡
Owner HENAN INST OF ENG