Inorganic ammonium perovskite quantum dot material and synthesis method

A technology of quantum dot material and synthesis method, which is applied in the synthesis field of pure ammonium perovskite quantum dot material, can solve the problems of poor stability, short storage time, unfavorable use and the like, and achieves the effect of low cost

Inactive Publication Date: 2019-01-11
TIANJIN UNIV
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  • Claims
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Problems solved by technology

[0005] At present, the perovskite quantum dots in the prior art still have the following two key problems: (1) perovskite quantum dots are sensitive to substance

Method used

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  • Inorganic ammonium perovskite quantum dot material and synthesis method
  • Inorganic ammonium perovskite quantum dot material and synthesis method
  • Inorganic ammonium perovskite quantum dot material and synthesis method

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Embodiment

[0029] A kind of inorganic ammonium perovskite quantum dot, its specific preparation steps are as follows:

[0030] Step 1. Clean glass bottle A and glass bottle B; wash glass bottle A and glass bottle B with deionized water, acetone, isopropanol, and deionized water for 10 minutes each, and then blow dry with a nitrogen gun;

[0031] Step 2, the ammonium iodide (NH 4 I) and 0.1mmol lead iodide (PbI 2 ) into the glass bottle A, successively add 5mL dimethylformamide to the glass bottle A as a solvent for dissolving the reactant, then add 100uL of oleic acid and 50uL of oleylamine, the resulting solution is a precursor solution;

[0032] Step 3. Add 5mL of isopropanol to glass bottle B as anti-solvent;

[0033] Step 4. Rapidly inject 50uL of the precursor solution into the anti-solvent of the glass bottle B, and fully stir the reaction to obtain a suspension;

[0034] Step 5, take out the suspension in the glass bottle B, centrifuge at 6000rpm and take the supernatant to obt...

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Abstract

The invention discloses an inorganic ammonium perovskite quantum dot material synthesis method. The inorganic ammonium perovskite quantum dot material has a following chemical formula of NH4PbI3; andthe method comprises the following steps: using dimethylformamide as a precursor solution for dissolving ammonium iodide and lead iodide, and using oleic acid and oleylamine as ligands; employing isopropanol as an anti-solvent; after the precursor solution is added to the anti-solvent, and performing centrifugation to take a supernatant to obtain the quantum dot material with a chemical formula ofNH4PbI3. The method synthesizes the perovskite quantum dot NH4PbI3 for the first time, and has contribution to the field of photovoltaic materials. The NH4PbI3 perovskite quantum dot is synthesized by selecting a novel inorganic ammonium group and inorganic ammonium for replacing the traditional MA and Cs, and the material has great significance for the performance and luminescence research of the novel semiconductor quantum dot material. According to the quantum dot material realized by the invention, the non-polluting and low-cost quantum dot material can be prepared.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and thin-film solar cell preparation, and more specifically relates to the synthesis of a pure ammonium perovskite quantum dot material. Background technique [0002] Perovskite quantum dots have broad application prospects in the field of quantum dot displays due to their high quantum yield, low cost, and simple preparation methods. Based on the confinement effect of quantum dots on electrons and holes, the radiation recombination efficiency of quantum dots will be better than other materials. Therefore, its fluorescence quantum yield will also be higher than that of bulk materials of the same substance. [0003] Perovskite quantum dots can use halogen elements and size effects to adjust their luminescence properties (mainly luminescence wavelength), so their luminescence spectrum can cover the entire visible light region (400-800nm). Therefore, compared with traditional Cd-based quantum ...

Claims

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Application Information

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IPC IPC(8): C09K11/66B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/664
Inventor 赵广久王朝
Owner TIANJIN UNIV
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