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An adjustable thermal field structure for preparing silicon carbide single crystal

A silicon carbide single crystal, adjustable technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of complex equipment transformation and equipment control, cost reduction of silicon carbide single crystal preparation, etc., to achieve fast and effective thermal The effect of field and fluid control, high quality stability and consistency, quick and easy adjustment

Active Publication Date: 2021-12-17
SICC CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above technologies require complex equipment modification and equipment control, which is not conducive to the reduction of the cost of silicon carbide single crystal preparation

Method used

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  • An adjustable thermal field structure for preparing silicon carbide single crystal
  • An adjustable thermal field structure for preparing silicon carbide single crystal

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Embodiment Construction

[0041] In order to explain the overall concept of the present application more clearly, the following detailed description will be given by way of examples in combination with the accompanying drawings.

[0042] In order to understand the above-mentioned purpose, features and advantages of the present application more clearly, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0043] In the following description, many specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, therefore, the protection scope of the application is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0044] In ad...

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Abstract

The application discloses an adjustable thermal field structure for preparing silicon carbide single crystal, which belongs to the field of silicon carbide single crystal preparation. The adjustable thermal field structure for preparing silicon carbide single crystals includes: a crucible for placing raw materials for growing silicon carbide single crystals; a heating device for heating the crucible; Collar. The adjustable thermal field structure of the present application adds threads and matching collars on the outside of the crucible to realize rapid conversion of the heating area of ​​the crucible, can quickly and conveniently realize the adjustment of the thermal field, and greatly reduces the manufacturing cost of silicon carbide single crystal.

Description

technical field [0001] The application relates to an adjustable thermal field structure for preparing silicon carbide single crystal, belonging to the field of silicon carbide single crystal preparation. Background technique [0002] Semiconductor silicon carbide single crystal material is a new generation of semiconductor single crystal material after the first generation semiconductor material represented by silicon material and the second generation semiconductor material represented by gallium arsenide and indium phosphide. Its excellent physical properties include large forbidden band width, high thermal conductivity, high critical breakdown field strength and high saturation electron mobility, etc. It is the preferred substrate material for power electronic devices and microwave radio frequency devices. [0003] The excellent properties of silicon carbide single crystal materials have been revealed by scientists as early as the 1950s, but it was not until the invention...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 高超刘家朋李长进李加林刘鹏飞孙元行李宏刚宗艳民
Owner SICC CO LTD
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