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A method and device for removing impurities in chlorosilane

A technology for the separation and purification of chlorosilanes and impurities, which is applied in the field of separation and purification of chlorosilanes, which can solve the problems of high equipment investment costs, unstable product quality, and high energy consumption, and achieve the effects of improving product quality, improving and stabilizing quality, and high purity

Active Publication Date: 2020-07-28
ASIA SILICON QINGHAI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, we started from the removal of trace impurities in chlorosilane, through the research of equipment and technology, in order to remove carbon-containing organic matter in chlorosilane, improve the purity of chlorosilane, enable enterprises to produce stable electronic grade polysilicon, and solve the problem at the same time The traditional production equipment and processes have high energy consumption, high equipment investment costs, unstable product quality and other problems caused by impurity removal.

Method used

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  • A method and device for removing impurities in chlorosilane
  • A method and device for removing impurities in chlorosilane

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Embodiment 1

[0038] This embodiment is above figure 2 The device reacts, and the gas-phase chlorosilane containing impurities is treated with a physical adsorbent to obtain the treated gas-phase chlorosilane; the physical adsorbent includes a porous solid carrier and a first component. The first component is Acetamide, the porous solid carrier is benzonitrile, wherein the mass percentage of acetamide in the physical adsorbent is 0.5%.

[0039] The carbon organic impurity content of chlorosilane was measured before and after treatment, and the results are shown in Table 1.

Embodiment 2

[0041] This embodiment is above figure 2 The device reacts, and the gas-phase chlorosilane containing impurities is treated with a physical adsorbent to obtain the treated gas-phase chlorosilane; the physical adsorbent includes a porous solid carrier and a first component. The first component is Polyaluminum chloride, the porous solid carrier is silicon aluminum oxide, wherein the mass percentage of polyaluminum chloride in the physical adsorbent is 0.2%.

[0042] Measure the carbon organic impurity content of chlorosilane before and after treatment, the result is as follows figure 1 shown.

[0043] Such as image 3 Shown: the present invention adopts following physical adsorption to remove the device of impurity in chlorosilane:

[0044]The device is a rectification tower 2, and the rectification tower 2 is provided with a rectification section 4, an adsorption-desorption section 3 and a stripping section 5; a tower top condenser 6 is arranged on the rectification section...

Embodiment 3

[0046] This embodiment is above image 3 The device is used for the production of high-purity chlorosilanes, and heterochlorosilanes are passed into the reactive distillation column 2 from the inlet of chlorosilanes. After the reaction, part of the products pass through the circulation pump 8 from the bottom of the column in the rectification section 4 and the adsorption and desorption section 3. The middle is passed into the reactive distillation column 2, the operating pressure range of the rectification column 2 is 1MPa, the operating temperature range of the top of the tower is 150°C, the reflux feed ratio range is 20, the rectification section 4 and the stripping section 5 trays The number is 200, and the structured packing is stainless steel plate corrugated packing; wherein the physical adsorbent includes a porous solid carrier and a first component, the porous solid carrier is silica gel, and the first component is aniline, wherein the aniline is in the physical adsorbe...

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Abstract

The invention provides a method and apparatus for removing impurities in chlorosilane. Chlorosilane is introduced into a rectification tower, the impurities in chlorosilane are treated through an adsorption and desorption section containing a physical adsorbent, and the whole production process is finished by combining rectification and stripping. Wherein the physical adsorbent comprises a first component, the first component is one or more kinds of compounds containing carboxyl groups, compounds containing amino groups and polyaluminium chloride. According to the method and apparatus, the selective adsorption function of the physical adsorbent is adopted, the trace impurities in chlorosilane can be effectively removed, carbon organic impurities can be especially removed, the impurity removal efficiency is high, the environmental protection performance is good, and the quality of chlorosilane is further improved and stabilized.

Description

technical field [0001] The invention relates to the technical field of separation and purification of chlorosilanes, in particular to a method and device for removing impurities in chlorosilanes. Background technique [0002] my country's polysilicon industry started in the 1950s and achieved industrialization in the mid-1960s. In recent years, with the rapid development of electronic information and solar photovoltaic industries, the market demand for polysilicon is increasing day by day, but at the same time, due to the long-term technical blockade of foreign polysilicon manufacturers in my country's production field, most polysilicon enterprises in my country cannot produce Stable electronic grade polysilicon, and there is always a certain gap in the level of polysilicon technology at home and abroad. [0003] The improved Siemens method is the mainstream process for the production of polysilicon. It reacts metallurgical-grade silicon powder and chlorosilane to form trich...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107B01D3/14B01D3/32
CPCB01D3/14B01D3/32B01D3/322C01B33/10778C01B33/10784
Inventor 曹玲玲蔡延国李彦宗冰肖建忠王体虎
Owner ASIA SILICON QINGHAI
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