Preparation method of high-quality semi-insulating silicon carbide single crystal and substrate doped with a small amount of vanadium
A silicon carbide single crystal, semi-insulating technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems such as substrate resistivity instability, uncontrollable crystal quality, and a large number of defects
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Embodiment 1
[0069] Example 1 Preparation of semi-insulating silicon carbide single crystal—impurity removal by thermal field device
[0070] The thermal field device includes graphite crucible and graphite insulation felt, and the graphite insulation felt and graphite crucible used for preparing silicon carbide single crystal are subjected to high-temperature purification. The high-temperature purification step includes: placing silicon carbide powder in the graphite crucible, the particle size of the powder is controlled at 50-500 μm, and the quantity is controlled at 50%-80% of the volume of the crucible. After the graphite crucible is placed in the graphite insulation felt and packaged in the silicon carbide crystal growth furnace, it is kept at a certain temperature and pressure for a period of time, and the thermal field device is used to remove impurities. The specific treatment temperature, pressure and time of thermal field 1#, thermal field 2#, thermal field 3#, thermal field 4# ...
Embodiment 2
[0074] Example 2 Preparation of semi-insulating silicon carbide single crystal primary product - mixing and growing crystals
[0075] Doping silicon carbide powder with vanadium element to prepare a small amount of vanadium-doped silicon carbide powder, 0.01-1g vanadium element should be placed in every 1kg reaction silicon carbide powder, the concentration of vanadium in silicon carbide powder after reaction Should be within 1 x 10 16 cm -3 ~1×10 17 cm -3 In order to achieve the content range of vanadium element in the subsequent crystal growth process.
[0076] Place a small amount of vanadium-doped silicon carbide powder in graphite crucibles of heat field 1#, heat field 2#, heat field 3#, heat field 4# and heat field 5# after the treatment in Example 1, and package them into long The crystal furnace is used for the crystal growth step. Taking thermal field 1# as an example to illustrate the crystal growth step, the specific crystal growth conditions of the crystal gro...
Embodiment 3
[0079] Example 3 Preparation of semi-insulating silicon carbide single crystal—annealing
[0080] The primary silicon carbide single crystal prepared in Example 2 was further annealed to prepare a semi-insulating silicon carbide single crystal. Take the annealing treatment of the primary silicon carbide single crystal produced by the crystal growth step in thermal field 1# as an example to illustrate the annealing stage. The semi-insulating silicon carbide single crystal preliminary products prepared in the thermal field 1# of Example 2 respectively through the crystal growth steps in Table 2 were annealed to obtain silicon carbide single crystal 1#, silicon carbide single crystal 2#, and silicon carbide single crystal For single crystal 3#, silicon carbide single crystal 4# and silicon carbide single crystal 5#, the specific annealing conditions are shown in Table 2.
[0081] After the growth of the silicon carbide single crystal is completed, the silicon carbide single crys...
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