AlGaN-based ultraviolet detector and manufacturing method thereof

A technology for ultraviolet detectors and manufacturing methods, which is applied in the field of AlGaN-based ultraviolet detectors and its manufacture, and can solve problems such as high noise, low responsivity, and large dark current

Inactive Publication Date: 2019-02-15
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to provide an AlGaN-based ultraviolet detector and its manufacturing method to solve the problems of high noise and low responsivity caused by the large dark current of the detector in the prior art

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  • AlGaN-based ultraviolet detector and manufacturing method thereof
  • AlGaN-based ultraviolet detector and manufacturing method thereof
  • AlGaN-based ultraviolet detector and manufacturing method thereof

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Embodiment Construction

[0035] To avoid ambiguity, it should be noted that the light absorbing layer mentioned in this application mainly refers to the intrinsic AlGaN layer.

[0036] The advantages of making ultraviolet detectors with AlGaN-based semiconductor materials are as follows:

[0037] Compared with ultraviolet photomultiplier tubes and Si-based ultraviolet detectors, wide-bandgap semiconductor ultraviolet detectors have obvious advantages such as good chemical stability, good thermal conductivity, high electron saturation drift rate, low cost, and small size. In addition, since the bandgap width of the wide bandgap semiconductor material determines the detection light wave range of the photodetector, the larger the bandgap width, the more sensitive the detector is to ultraviolet light, and the lower the sensitivity to visible light and infrared light. It can be seen that the inhibition ratio is higher. AlGaN material is a direct wide bandgap material, which has obvious advantages in bandg...

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Abstract

The invention discloses an AlGaN-based ultraviolet detector, which sequentially comprises an AlN template, an AlGaN/AlN superlattice, a first N type AlGaN layer, an intrinsic AlGaN layer, a P type AlGaN layer and an electrode in an outward direction from a substrate. The AlGaN-based ultraviolet detector comprises a second N type AlGaN layer; the second N type AlGaN layer is arranged between the first N type AlGaN layer and the intrinsic AlGaN layer; and the Al ingredient content of the second N type AlGaN layer from the contact surface with the first N type AlGaN layer to the contact surface with the intrinsic AlGaN layer is gradually reduced. Through the introduction of the second N type AlGaN layer with the gradually changed Al ingredient content, the polarization electric field of a heterogenous interface is regulated and controlled; dark current in the detector is reduced; the noise in the work process of the detector is reduced; and the detector response degree is improved. In addition, through the introduction of the layer with the gradually changed Al ingredient content, the stress of a light absorption layer is effectively released; and the crystal quality of the light absorption AlGaN material is improved. Meanwhile, the invention also provides a manufacturing method of the AlGaN-based ultraviolet detector with the beneficial effects.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to an AlGaN-based ultraviolet detector and its manufacturing method. Background technique [0002] In recent years, solar-blind ultraviolet photodetectors have important applications in both military and civilian fields. In the military, ultraviolet detection technology can be used for missile early warning and guidance. It can determine the target by detecting ultraviolet radiation waves in missile plume, and provide missile early warning, tracking and interception for ground defense systems. In civilian use, ultraviolet detection technology can be used for the detection of major fires. Through the detection and monitoring of flames, it replaces traditional smoke detection and heat detection, and can prevent fires more effectively. Ultraviolet detection technology is a new dual-use photoelectric technology after infrared and laser detection technology. It has become a resear...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0304H01L31/18
CPCH01L31/03048H01L31/105H01L31/1848Y02P70/50
Inventor 张志伟宋航陈一仁缪国庆蒋红李志明
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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