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Preparation method of novel infrared photoelectric detection substrate based on gold nanometer biconical structure with Pd/Ag being deposited at tips

A technology of gold nanometer and infrared light, which is applied in metal material coating process, gaseous chemical plating, coating, etc., to achieve the effect of easy control of the preparation method, simple and controllable preparation method, and strong anti-interference ability

Inactive Publication Date: 2019-02-22
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In previous studies, most of the adjustment of resonance frequency by preparing different metal particle nanostructures is limited to the second infrared window (1000-1400nm), and it faces the problem of uniform recombination with the substrate.

Method used

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  • Preparation method of novel infrared photoelectric detection substrate based on gold nanometer biconical structure with Pd/Ag being deposited at tips
  • Preparation method of novel infrared photoelectric detection substrate based on gold nanometer biconical structure with Pd/Ag being deposited at tips

Examples

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Effect test

Embodiment 1

[0024] A preparation method for a new type of infrared photodetection substrate based on the tip-deposited Pd / Ag gold nano-bicone structure, using a weak acid to reduce Pd and Ag cation solutions to deposit a Pd / Ag alloy on the tip of the gold nano-bicone to obtain a resonance wavelength in the infrared band The Pd / Ag structure is deposited on the tip of the gold nanobicone, and it is loaded on the pretreated silicon surface as an absorption enhancement layer, and then a layer of oxide protective film is deposited by ALD atomic layer deposition technology, as follows:

[0025] (1) Dissolve 2mL of gold nanobicones with 2mL of CTAC (0.1M) solution, then add 10μL of silver nitrate (0.01M) and 0.5μL of vitamin C solution (0.1M), and put the mixed solution into a constant temperature air shaker , the conditions were set at 60°C, 100rpm, centrifuged after 4h of reaction, and centrifuged at 7000rpm for 10min; the obtained precipitate was redispersed in 2mL of CTAB (0.003M) solution, a...

Embodiment 2

[0030] A method for preparing a novel infrared photodetection substrate based on a tip-deposited Pd / Ag gold nano-bicone structure, similar to the steps in the examples, as follows:

[0031] (1) Dissolve 2mL of gold nanobicones with 2mL of CTAC (0.1M) solution, then add 8μL of silver nitrate (0.01M) and 0.4μL of vitamin C solution (0.1M), and put the mixed solution into a constant temperature air shaker , set the conditions at 60°C, 100rpm, centrifuge after 4h of reaction, centrifuge at 7000rpm for 10min; redisperse the obtained precipitate in 2mL of CTAB (0.003M) solution, then add 2μL of chloropalladium acid (1mM) and 4 μL of vitamin C solution (0.01M), let the mixed solution stand at room temperature for 12 hours, then centrifuge at 3500-5000rmp for 10 minutes, disperse the precipitate into water for storage, and prepare the tip-deposited Pd / Ag gold nano-bicone solution;

[0032] (2) Dissolve 0.5g of PSS in 50mL of sodium chloride solution (5mM), and soak the silicon wafer a...

Embodiment 3

[0035] A method for preparing a novel infrared photodetection substrate based on a tip-deposited Pd / Ag gold nano-bicone structure, similar to the steps in the examples, as follows:

[0036] (1) Dissolve 2mL of gold nanobicones with 2mL of CTAC (0.1M) solution, then add 10μL of silver nitrate (0.01M) and 0.5μL of vitamin C solution (0.1M), and put the mixed solution into a constant temperature air shaker , set the conditions at 60°C, 100rpm, centrifuge after 4h of reaction, centrifuge at 7000rpm for 10min; redisperse the obtained precipitate in 2mL of CTAB (0.003M) solution, then add 1μL of chloropalladium acid (1mM) and 2 μL of vitamin C solution (0.01M), let the mixed solution stand at room temperature for 12 hours, then centrifuge at 3500-5000rmp for 10 minutes, disperse the precipitate into water for storage, and prepare the tip-deposited Pd / Ag gold nano-bicone solution;

[0037](2) Dissolve 0.5g of PSS in 50mL of sodium chloride solution (5mM), and soak the silicon wafer i...

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Abstract

The invention provides a preparation method of a novel infrared photoelectric detection substrate based on a gold nanometer biconical structure with Pd / Ag being deposited at the tips. The method comprises the steps that Pd / Ag alloy is deposited at the tips of a gold nanometer bicone by reducing a Pd cation solution and an Ag cation solution with weak acid, and the gold nanometer biconical structure with Pd / Ag being deposited at the tips and absorption peaks being located in the range of 1400-2000 nm is obtained; and by conducting surface treatment on a silicon wafer, the gold nanometer biconical structure with Pd / Ag being deposited at the tips is effectively loaded on the surface of the silicon wafer, so that a high-performance near-infrared absorbing layer is constructed, then an oxide film with a certain thickness is deposited on the surface of an obtained substrate through atomic layer deposition, and thus the high-performance near-infrared photoelectric detection substrate is obtained. The detection substrate prepared through the method has good selective response to light in the infrared band of 1400-2000 nm, and the whole preparation method is easy to control, high in repeatability, compatibility and anti-interference ability and applicable to different work environments.

Description

technical field [0001] The invention belongs to the field of semiconductor nanomaterials and photoelectric detection, and in particular relates to a method for preparing a novel infrared photoelectric detection substrate based on a tip-deposited Pd / Ag gold nano-bicone structure. Background technique [0002] Photoelectric detection technology, especially infrared photodetection technology, is widely used in different fields. According to the wavelength range, it can be subdivided into near-infrared, mid-infrared and far-infrared photoelectric detection. Among them, mid-infrared photodetection has important application value in the lives of ordinary people, and has received extensive attention in the fields of aerospace, optical communication, industrial control, and near-infrared imaging. Because it is of great significance to obtain a detection substrate with good mid-infrared photoelectric response. [0003] In the early days, people mainly obtained mid-infrared response...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24C23C16/02C23C16/40C23C16/455
CPCB22F9/24C23C16/0281C23C16/403C23C16/405C23C16/407C23C16/45525
Inventor 何丹农卢静白仕亨涂兴龙金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH