Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming graphene film, mems microphone and method for forming same

A graphene film and microphone technology, applied in coatings, sensors, gaseous chemical plating, etc., can solve problems such as breakage and cracking of graphene films, achieve cost savings, good sensitivity and mechanical strength, and reduce cracking or damage. the effect of risk

Active Publication Date: 2021-06-11
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a method for forming a graphene film to improve the problem of cracking or damage of the graphene film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming graphene film, mems microphone and method for forming same
  • Method for forming graphene film, mems microphone and method for forming same
  • Method for forming graphene film, mems microphone and method for forming same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Graphene has great application prospects due to its excellent properties in mechanics, electricity, optics and chemistry. However, when it is necessary to form a graphene film on a specific substrate, it is usually necessary to provide a transitional substrate, and form the graphene film on the transitional substrate, and then transfer the formed graphene film to the specific substrate. In this way, not only the transfer process of the graphene film is cumbersome, but also easy to cause cracking or damage of the graphene film.

[0037] To this end, the invention provides a method for forming a graphene film. figure 1 It is a schematic flow diagram of a method for forming a graphene layer in Embodiment 1 of the present invention, as figure 1 Shown, the formation method of described graphene layer comprises:

[0038] Step S110, providing a substrate, and performing pretreatment on the substrate to introduce gas ions and / or gas atoms into the substrate;

[0039] Step S1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for forming a graphene film, a MEMS microphone and a method for forming the same, comprising: introducing gas ions and / or gas atoms into a substrate; sequentially forming a transition layer and a graphene film on the substrate; During the process of removing the transition layer, the graphene film is attracted to the graphene film by bubbles generated by gas ions and / or gas atoms on the surface of the substrate, so that the graphene film is attached to the substrate. That is, according to the forming method provided by the present invention, the graphene film can be formed on the target substrate without additionally providing a transition substrate, which effectively saves the cost; The capillary channel spontaneously bridges with the bubbles and then adsorbs on the substrate, which can effectively reduce the risk of cracking or damage of the graphene film.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a graphene film, a MEMS microphone and a method for forming the same. Background technique [0002] Graphene is a nanostructure with a two-dimensional honeycomb, which has high electron mobility, Young's modulus, and thermal conductivity, and has attracted great interest from researchers in various fields. For example, it has broad application prospects in many fields such as electronic devices, transparent electrode materials, and energy storage materials. [0003] In order to realize various potential applications of graphene, it is usually necessary to form graphene films on specific substrate surfaces, such as silicon substrates or silicon-silicon oxide substrates. In addition, the chemical vapor deposition process has become an important means of forming graphene films because of its advantages of large-scale production and the ability to grow hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/02C23C16/01H04R19/04H04R31/00
CPCC23C16/01C23C16/0281C23C16/26H04R19/04H04R31/00
Inventor 李鑫王伟周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com